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    2 K X 4 RAM Search Results

    2 K X 4 RAM Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA55DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413204YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413205YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA25P Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    2 K X 4 RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C4241

    Abstract: IDT722X1 CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4251 CY7C4421 IDT72421
    Text: CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 425164 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 4251 64 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs Features • Functional Description


    Original     		PDF CY7C4421 CY7C4231 CY7C4421) CY7C4201) CY7C4211) CY7C4221) CY7C4231) CY7C4241) CY7C4241 IDT722X1 CY7C4201 CY7C4211 CY7C4221 CY7C4251 IDT72421

    Untitled

    Abstract: No abstract text available
    Text: - D ata R A M / ROM bit 6k X 2 3 - - 8kx23 W ork RAM (bit) LCD segm ent Model No. I k x 8 /2 5 6 x 4 480 SM3503 1 5 1 2 X 8 /2 5 6 X 4 480 SM3504 < 5 1 2 X 8 /2 5 6 X 4 384 SM3507 2 k X 8 /2 5 6 X 4 540 SM3509 8 k X 8 /2 5 6 X 4 540 SM3512 MICROCOMPUTERS


    OCR Scan     		PDF SM3503 SM3504 SM3507 SM3509 SM3512 SM3514 SM3515 SM3508 SM3511 SM3513

    KM424C257

    Abstract: No abstract text available
    Text: KM424C257 CMOS VIDEO RAM 25 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual — _ Parameter Speed


    OCR Scan     		PDF KM424C257 110ns 28-PIN KM424C257

    KM424C257

    Abstract: 424C257 Video RAM
    Text: PRELIMINARY M424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual Port DRAM. It consists of a 2 5 6 K X 4 dynamic random


    OCR Scan     		PDF M424C257 125ns 150ns 100ns 180ns 424C257 28-PIN KM424C257 KM424C257 Video RAM

    KM424C257

    Abstract: 6520J 509Y EZ 742 vk 739 Video RAM
    Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual P a rà ifü fë r - - — Speed


    OCR Scan     		PDF KM424C257 28-PIN KM424C257 6520J 509Y EZ 742 vk 739 Video RAM

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		PDF KM424C257 110ns 130ns 150ns 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual po rt Architecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual ' Parameter Speed


    OCR Scan     		PDF KM424C257 424C257 125ns 150ns 180ns ReC257 28-PIN

    KMM536256

    Abstract: No abstract text available
    Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam­ sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536256B 536256B 20-pin 18-pin 72-pin 536256B- 130ns KMM536256

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random


    OCR Scan     		PDF KM428C128 40-PIN 40/44-PIN

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		PDF KM424C257 125ns 28-PIN 0D13625

    Untitled

    Abstract: No abstract text available
    Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)


    OCR Scan     		PDF HB56E836/HB56E436 HB56E836 36-bit, HB56E436 ADE-203-673A HB56E836 16-Mbit HM5117405) HM514105)

    SBS IN CIRCUIT

    Abstract: Nippon capacitors
    Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components)


    OCR Scan     		PDF HB56A832BS/SBS, HB56A432BR/SBR HB56A832BS/SBS 32-bit, ADE-203-728B 16-Mbit SBS IN CIRCUIT Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI


    OCR Scan     		PDF HB56U832 HB56U432 HB56U832B/SB 32-bit, HB56U432B/SB ADE-203-736B 16-Mbit HM5117405)

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI


    OCR Scan     		PDF HB56U832 HB56U432 HB56U832B/SB 32-bit, HB56U432B/SB ADE-203-736B 16-Mbit HM5117405) Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: AKN62414 Series AKN62424 Series 262144-Word x 16-Bit/524288-Word x 8-Bit CMOS Mask Programmable ROM A K N 6 2 4 1 4 , A K N 6 2 4 2 4 S eries is a 4-M b it C M O S m ask-prog ram ab le R O M o rg an ize d either as 2 6 2 1 4 4 -w o rd x 16-b it or as 5 2 4 2 8 8 -w o rd


    OCR Scan     		PDF AKN62414 AKN62424 262144-Word 16-Bit/524288-Word AKN62414P, AKN62424P N62414/6 15/A-1

    Untitled

    Abstract: No abstract text available
    Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs o f 4 M X 4 Components)


    OCR Scan     		PDF HB56A832BS/SBS, HB56A432BR/SBR HB56A832BS/SBS 32-bit, HB56A432BR/SBR ADE-203-728C HB56A832BS/SBS 16-Mbit HM5117400)

    ITL 9

    Abstract: W6106
    Text: - 386- 2 M 2 5 6 K X 8 v ;U 5 1» * °- h 5Ü £ 'J «P D 4 8 2 2 3 4 - 7 0 / - 8 0 //PD 4 82 23 5 -70 /-8 0 N EC - 2 5 6 k W X 8 + 512W x 8 - 'S 5 V± 10% - U K W « * / (R A M , S A M ) (m W I X X ÍM fr $ S ü f c (m A ) ( S A M X ? > '< 4 , T 7 t -i •/)


    OCR Scan     		PDF 256KX8 PD482234-70/-80 /PD482235-70/-80 256kW 22/25lmin) WO/IOO-W7/I07 W7/I07 ITL 9 W6106

    CY7C425-15JI

    Abstract: 7C419
    Text: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width


    OCR Scan     		PDF 300-mil IDT7200, IDT7291, IDT7202, IDT7203, IDT7204 CY7C419, CY7C420/1, CY7C424/5, CY7C425-15JI 7C419

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW473EJN HB56UW465EJN 72-bit, 64-bit, ADE-203-724C HB56UW473EJN, Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)


    OCR Scan     		PDF HB56UW473EJN HB56UW465EJN HB56UW473EJN 72-bit, HB56UW465EJN 64-bit, ADE-203-724C HB56UW473EJN,

    KMM536256B-8

    Abstract: KMM536256B LY 9525
    Text: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4


    OCR Scan     		PDF KMM536256B 256KX36 20-pin 18-pin 72-pin 536256B- 536256B8 130ns 150ns 180ns KMM536256B-8 KMM536256B LY 9525

    M3903

    Abstract: SM39
    Text: MICROCOMPUTERS ★ Under development LCD segm ent Model No. 480 S M 35 03 5 1 2 x 8 /2 5 6 x 4 480 SM 3504 •5 1 2 x 8 / 2 5 6 x 4 384 S M 3507 1 184 SM 3508 2 k X 8 /2 5 6 X 4 540 SM 3509 X 8 /2 5 6 X 4 540 ★ SM 3512 Data RAM/ ROM bit Work RAM (bit)


    OCR Scan     		PDF 12BQFP M3903 SM39

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)


    OCR Scan     		PDF HB56G236 HB56G136 HB56G236B/SB 36-bit, HB56G136B/SB ADE-203-702C 16-Mbit HM5118160) Nippon capacitors

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)


    OCR Scan     		PDF HB56G236 HB56G136 HB56G236B/SB 36-bit, HB56G136B/SB ADE-203-702C 16-Mbit HM5118160) Nippon capacitors