CMSH2-60
Abstract: schottky diode SMB marking code 120 CMSH2-100 CMSH2-20 CMSH2-40 CS220 TR13
Text: CMSH2-20 CMSH2-40 CMSH2-60 CMSH2-100 SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 2 AMP, 20 THRU 100 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20 Series 2.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality, well constructed, highly reliable
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CMSH2-20
CMSH2-40
CMSH2-60
CMSH2-100
CMSH2-20
CMSH2-20,
CMSH2-60)
CMSH2-100)
CMSH2-60,
CMSH2-60
schottky diode SMB marking code 120
CMSH2-100
CMSH2-40
CS220
TR13
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Untitled
Abstract: No abstract text available
Text: CMR2-02 CMR2-04 CMR2-06 CMR2-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER 2 AMP, 200 THRU 1000 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR2-02 Series 2.0 Amp Surface Mount Silicon Rectifier is a high quality, well constructed, highly reliable component
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CMR2-02
CMR2-04
CMR2-06
CMR2-10
CMR2-02
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C206
Abstract: C210 C202 C204 CMR2-02 CMR2-04 CMR2-06 CMR2-10 TR13 GENERAL SEMICONDUCTOR MARKING SMB
Text: CMR2-02 CMR2-04 CMR2-06 CMR2-10 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER 2 AMP, 200 THRU 1000 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMR2-02 Series 2.0 Amp Surface Mount Silicon Rectifier is a high quality, well constructed, highly reliable component
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CMR2-02
CMR2-04
CMR2-06
CMR2-10
CMR2-02
C206
C210
C202
C204
CMR2-04
CMR2-06
CMR2-10
TR13
GENERAL SEMICONDUCTOR MARKING SMB
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CMSH2-100M
Abstract: CMSH2-20M CMSH2-40M CMSH2-60M TR13 CS260
Text: CMSH2-20M CMSH2-40M CMSH2-60M CMSH2-100M w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY RECTIFIER 2 AMP, 20 THRU 100 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20M Series 2.0 Amp Surface Mount Silicon Schottky Rectifier is a high quality, well constructed, highly
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CMSH2-20M
CMSH2-40M
CMSH2-60M
CMSH2-100M
UL94V-0
CMSH2-20M,
CMSH2-60M)
CMSH2-100M)
CMSH2-100M
CMSH2-20M
CMSH2-40M
CMSH2-60M
TR13
CS260
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE
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SHD675112
SHD675112B
1200-VOLT,
silicon carbide
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SHD675112
Abstract: SHD675112B
Text: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE
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SHD675112
SHD675112B
1200-VOLT,
SHD675112
SHD675112B
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675052 SHD675052A SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE
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SHD675052
SHD675052A
SHD675052B
1200-VOLT,
silicon carbide
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675112 SHD675112B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4181, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE
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SHD675112
SHD675112B
1200-VOLT,
silicon carbide
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PDF
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SHD675052
Abstract: SHD675052B
Text: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:
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SHD675052
SHD675052B
1200-VOLT,
SHD675052
SHD675052B
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PDF
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:
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SHD675052
SHD675052B
1200-VOLT,
silicon carbide
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PDF
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silicon carbide
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD675052 SHD675052B TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4128, Rev. B HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC SHD-2 HIGH PROFILE PACKAGE FEATURES:
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SHD675052
SHD675052B
1200-VOLT,
silicon carbide
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scr 20 amp
Abstract: scr 20a NTE5514 NTE5515 Diode 400V 20A NTE5516
Text: NTE5514 thru NTE5516 Silicon Controlled Rectifier SCR 20 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM NTE5514 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE5514
NTE5516
NTE5514
NTE5515
150mA
scr 20 amp
scr 20a
NTE5515
Diode 400V 20A
NTE5516
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NTE5518
Abstract: NTE5517 NTE5519
Text: NTE5517 thru NTE5519 Silicon Controlled Rectifier SCR 35 Amp, 1/2” Press Fit Absolute Maximum Ratings: Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE5517
NTE5519
NTE5517
NTE5518
150mA
NTE5518
NTE5519
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transistor working principle
Abstract: NTE6082
Text: NTE6082 Silicon Schottky Barrier Rectifier 60V, 16 Amp, 2−Lead TO220 Description: The NTE6082 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum barrier metal. Features: D Guardiring for Stress Protection D Low Forward Voltage
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NTE6082
NTE6082
transistor working principle
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thyristor SCR 406
Abstract: marking 4n thyristor 406 CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 4B2 rectifier CS202-4B
Text: Central CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 TM Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications
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CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
O-202-2
CS202
thyristor SCR 406
marking 4n
thyristor 406
CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
4B2 rectifier
CS202-4B
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silicon carbide
Abstract: No abstract text available
Text: SHD687182 SENSITRON SEMICONDUCTOR DATA SHEET 5349, Rev. - HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 2 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC SMD 0.2 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
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SHD687182
1200-VOLT,
silicon carbide
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Untitled
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD687182 DATA SHEET 5349, Rev. A HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 2 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC SMD 0.2 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
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SHD687182
1200-VOLT,
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Microsemi micronote series 050
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 2 Amp To 4 Amp Standard Recovery Rectifiers Available DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
Microsemi micronote series 050
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PDF
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Microsemi micronote series 050
Abstract: No abstract text available
Text: UT2005 – UT2060, UT3005 – UT3060, and UT4005 – UT4060 Available 2 AMP TO 4 AMP STANDARD RECOVERY RECTIFIERS DESCRIPTION High average power and surge capability make these series of devices attractive in many highreliability applications. All Microsemi rectifiers have a sleeve of pure hard glass fused to the silicon
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UT2005
UT2060,
UT3005
UT3060,
UT4005
UT4060
T4-LDS-0280,
Microsemi micronote series 050
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PDF
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CMSH2-20L
Abstract: CMSH2-40L TR13
Text: CMSH2-20L CMSH2-40L w w w. c e n t r a l s e m i . c o m SURFACE MOUNT LOW VF SILICON SCHOTTKY RECTIFIER 2 AMP, 20 AND 40 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSH2-20L Series 2.0 Amp Surface Mount Low VF Schottky Rectifier is a high quality, well constructed, highly
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CMSH2-20L
CMSH2-40L
CMSH2-20L:
CS220L
CMSH2-40L:
CS240L
UL94V-0
CMSH2-20L
CMSH2-40L
TR13
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Untitled
Abstract: No abstract text available
Text: Central' CS202-4B-2 CS202-4D-2 CS202-4M-2 CS202-4N-2 Semiconductor Corp. 4.0 AMP SCR 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CS202-4B-2 series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications
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OCR Scan
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CS202-4B-2
CS202-4D-2
CS202-4M-2
CS202-4N-2
O-202-2
20ijs)
14-September
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TA31103
Abstract: ta31103f TA31103FN DRC3 TOSHIBA COMPRESSOR 60 HZ TA3110
Text: TOSHIBA TA31103F#TA31103FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 3 1 1 0 3 F, SILICON MONOLITHIC T A 3 1 1 0 3 FN COMPANDER IC FOR CORDLESS TELEPHONE FEATURES • Noise reduction IC, compressor and expander on a chip • 2 buffer amp. for filter, MIC AMP, receiver amp. and PRE
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OCR Scan
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TA31103F
TA31103
TA31103F,
TA31103FN
TA31103FN)
TA31103F
SSOP24-P-300-1
SSOP24-P-300-0
TA31103FN
DRC3
TOSHIBA COMPRESSOR 60 HZ
TA3110
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MCR846
Abstract: MCR846-1
Text: MCR846 series SILICON Silicon controlled rectifiers for low-power switching and control applications requiring blocking to 2CI0 volts and load currents to 2 amp. PIN ». CATHODE 2. GATE . STUO ANODE CASE 63 M A X IM U M R A T IN G S (T j = 1 0 5 'C u n le ss otherw ise noted)
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OCR Scan
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MCR846
MCR846-1
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PDF
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