sla 1003
Abstract: SLA4031 SLA4061 13002a sma4033 SMA4032 SDH02 SMA5106
Text: 2-3 Transistor Arrays & MOS FET Arrays •With Built-in Flywheel Diode Number VCEO V Part No. of Circuits IC(A) VDSS(V) Chip ID(A) SDK02 hFE RDS(ON) (min) max(Ω) Fig. No. Package 2 MOS 0.24 SMD16Pin 1 3 MOS 0.25 SIP12Pin 2 SLA5031 5 MOS 0.3 SIP12Pin with fin
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SDK02
SMA5114
SLA5031
SDH02
SMA4033
SMA4032
SLA5040
SMA5102
SMA5106
SLA5002
sla 1003
SLA4031
SLA4061
13002a
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SMA4036
Abstract: SMA4033 SLA4061 sla4031 sla 1003 fly-wheel diode SMA4032 SMA5106 31002 13002a
Text: 2-3 Transistor Arrays & MOS FET Arrays •With Built-in Flywheel Diode Number VCEO V Part No. of Circuits IC(A) VDSS(V) Chip ID(A) SDK02 hFE RDS(ON) (min) max(Ω) Package Fig. No. 2 MOS 0.24 SMD16Pin 1 3 MOS 0.25 SIP12Pin 2 SLA5031 5 MOS 0.3 SIP12Pin with fin
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SDK02
SMA5114
SLA5031
SDH02
SMA4033
SMA4032
SLA5040
SMA5102
SMA5106
SLA5002
SMA4036
SLA4061
sla4031
sla 1003
fly-wheel diode
31002
13002a
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transistor 13002
Abstract: 13002 TRANSISTOR SLA5094 sla5046 SLA5041 sla5054 SLA15Pin SLA5081 SLA5047 sla5021
Text: 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for “S” shape Correction Switch of CRT Display Part No. Number VDSS ID of Circuits V (A) SLA5037 100 RDS(ON) Chip Package max(mΩ) Fig. No. 10 MOS 80 SIP12Pin with fin 10 MOS 85 SIP12Pin with fin
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SIP12Pin
transistor 13002
13002 TRANSISTOR
SLA5094
sla5046
SLA5041
sla5054
SLA15Pin
SLA5081
SLA5047
sla5021
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TKM2502Y
Abstract: FET n-ch 1 ohm
Text: Drain common dual Nch power MOS FET / TKM2502Y Page 1 of 2 New Drain common dual Nch power MOS FET TKM2502Y Description The TKM2502Y is a drain-common dual Nch power MOS-FET. Excellent resistor characteristics make it ideal for power management in 2-channel battery protection
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TKM2502Y
TKM2502Y
HSON3030-8)
SON3030-8
10ohm
jp/products/new/mos-fet/tkm2502y
FET n-ch 1 ohm
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marking ia
Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as
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PA602T
PA602T
SC-59
PA603T
marking ia
uPA602T
C10535E
MEI-1202
PA603T
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2SK2414
Abstract: 2SK2414-Z IEI-1213 MEI-1202 MF-1134 TEA-1037 TC249
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
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2SK2414,
2SK2414-Z
2SK2414
2SK2414-Z
IEI-1213
MEI-1202
MF-1134
TEA-1037
TC249
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d1308
Abstract: d1297 2SK2414 2SK2414-Z C10535E C10943X C11531E MEI-1202 2SK2414Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2414, 2SK2414-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeter 5.0 ±0.2 FEATURES 1 2 3 RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
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2SK2414,
2SK2414-Z
2SK2414
d1308
d1297
2SK2414-Z
C10535E
C10943X
C11531E
MEI-1202
2SK2414Z
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Untitled
Abstract: No abstract text available
Text: QS6J3 Transistors 2.5V Drive Pch+Pch MOS FET QS6J3 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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13002 TRANSISTOR
Abstract: transistor 13002 SLA5077 SLA5047 SLA5041 SLA5037 SLA15Pin SLA5070 SLA5058
Text: 2-3 Transistor Arrays & MOS FET Arrays 2-3-4 MOS Array for “S” shape Collection Switch of CRT Display Part No. Number VDSS ID of Circuits V (A) SLA5037 100 SLA5047 SLA5052 150 4 SLA5077 RDS(ON) Chip Fig. No. Package max(Ω) 10 MOS 80 SIP12Pin with fin
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SIP12Pin
SIP15Pin
13002 TRANSISTOR
transistor 13002
SLA5077
SLA5047
SLA5041
SLA5037
SLA15Pin
SLA5070
SLA5058
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ROHM QS6J1
Abstract: QS6J1
Text: QS6J1 Transistors 2.5V Drive Pch+Pch MOS FET QS6J1 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.
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Untitled
Abstract: No abstract text available
Text: G3VM-101BR/ER MOS FET Relays DIP Compact, General-purpose, Analog-switching MOS FET Relays, with 2-A Switching. • Continuous load current of 2 A. Connection C : 4 A • Switches minute analog signals. G3VM-101BR/ER • Dielectric strength of 2,500 Vrms between I/O.
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G3VM-101BR/ER
K142-E1-02
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G3VM-101BR
Abstract: MOS FET Relays Omron G3VM-101ER
Text: G3VM-101BR/ER MOS FET Relays DIP Compact, General-purpose, Analog-switching MOS FET Relays, with 2-A Switching. • Continuous load current of 2 A. Connection C : 4 A • Switches minute analog signals. G3VM-101BR/ER • Dielectric strength of 2,500 Vrms between I/O.
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G3VM-101BR/ER
K142-E1-02
G3VM-101BR
MOS FET Relays
Omron
G3VM-101ER
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C10535E
Abstract: MEI-1202 PA572T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA572T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING The µPA572T is a super-mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting 0.2 +0.1 –0
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PA572T
PA572T
SC-70
C10535E
MEI-1202
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C10535E
Abstract: MEI-1202 PA502T PA503T 6 PIN case mos fet p-channel
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA503T P-CHANNEL MOS FET 5-PIN 2 CIRCUITS The µPA503T is a mini-mold device provided with PACKAGE DIMENSIONS (in millimeters) two MOS FET circuits. It achieves high-density mounting and saves mounting costs. +0.1
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PA503T
PA503T
SC-59
PA502T
C10535E
MEI-1202
PA502T
6 PIN case mos fet p-channel
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uPA602T
Abstract: C10535E MEI-1202 PA602T PA603T 6 PIN case mos fet p-channel UPA603T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA603T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and 2.8 ±0.2 FEATURES • Two MOS FET circuits in package the same size as
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PA603T
PA603T
SC-59
PA602T
uPA602T
C10535E
MEI-1202
PA602T
6 PIN case mos fet p-channel
UPA603T
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MEI-1202
Abstract: PA606T PA607T C10535E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA606T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING The µPA606T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET elements. It achieves high-density mounting 0.32 +0.1 –0.05
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PA606T
PA606T
SC-59
PA607T
MEI-1202
PA607T
C10535E
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C10535E
Abstract: MEI-1202 PA606T PA607T 6 PIN case mos fet p-channel
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA607T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING The µPA607T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET elements. It achieves high-density mounting +0.1 0.32 –0.05
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PA607T
PA607T
SC-59
PA606T
C10535E
MEI-1202
PA606T
6 PIN case mos fet p-channel
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Untitled
Abstract: No abstract text available
Text: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating
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2SK3019
100mA)
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TC-799
Abstract: NEC 2sk2134 nec 2134 2sk2134
Text: i A I A di il. t ! MOS FIELD EFFECT POWER TRANSISTORS 2 S K 2 1 3 4 , 2 S K 2 1 3 4 - Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistors designed for high voltage switching applications.
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2SK2134,
2SK2134-Z
2SK2134-Z
IEI-1209)
2134-Z
TC-799
NEC 2sk2134
nec 2134
2sk2134
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP224G,TLP224G-2 TENTATIVE MODEMS TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET TLP224G, TLP224G-2 PBX TELECOMMUNICATIONS The TOSHIBA TLP224G series consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a
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TLP224G
TLP224G-2
TLP224G,
TLP224G
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k1498
Abstract: 2SK1498 TEA-1035 2SK1497 MEI-1202 TEA1034
Text: DATA SHEET A MOS FIELD EFFECT POWER TRANSISTOR 2 S K 1 4 9 7 /2 S K 1 4 9 8 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1497/2SK1498 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in millimeters designed for high voltage switching applications.
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2SK1497
2SK1498
2SK1497/2SK1498
IEI-1209)
k1498
2SK1498
TEA-1035
MEI-1202
TEA1034
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TC-7831B
Abstract: 2335A 2SK680A
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S K 6 8 0 A N-CHANIMEL MOS FET FOR HIGH SPÈED SWITCHING The 2SK680A, N-channel vertical type MOS FET , is a switching PACKAGE DIMENSIONS Unit : mm device which can be driven directly by the output of ICs having a 5 V
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2SK680A
2SK680A,
TC-7831B
2335A
2SK680A
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TLP224GJLP224G-2 TOSHIBA PHOTOCOUPLER MODEMS GaAs IRED & PHOTO-MOS FET TLP224G, TLP224G-2 PBX Unit in mm TLP224G ^4 ir33 TELECOMMUNICATIONS The TOSHIBA TLP224G series consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a
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TLP224GJLP224G-2
TLP224G,
TLP224G-2
TLP224G
TLP224G
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Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
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T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
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