c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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Untitled
Abstract: No abstract text available
Text: IBM13T2649JC 2M x 64 S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency J Units j 3 jfcK I Clock Frequency j 100 j MHz ! jtcK
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IBM13T2649JC
2Mx64
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 8 8 4 5 H B 8M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Chipkill Correct EDO DIMM -Buffered inputs except RAS, Data
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8Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle
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IBM13T2649NC
2Mx64
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 T 1 6 4 9 N C Preliminary 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: I 10 CAS Latency 3 ! 12 j Units ! 3 jfcK I Clock Frequency
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2Mx64
IBM13T1649NC
75H5936
GA14-4477-00
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Untitled
Abstract: No abstract text available
Text: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz
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IBM13V25649AP
IBM13V51649AN
IBM13V25649AN
IBM13V51649AP
256K/512K
s5649AP
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)
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16Mx72
104ns
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1X359
Abstract: No abstract text available
Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address
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IBM11M1645L
1X359
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Untitled
Abstract: No abstract text available
Text: IBM13T2649JC 2M x 64 1 Bank S D R A M SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: CAS Latency • • • • • • jfcK I Clock Frequency jtcK
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IBM13T2649JC
2Mx64
75H5376
A14-4476-01
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Untitled
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
104ns
124ns
SA14-4624-04
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Untitled
Abstract: No abstract text available
Text: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Mode DIMMs System Performance Benefits:
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IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
104nsion
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Untitled
Abstract: No abstract text available
Text: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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IBM13N16644HC
IBM13N16734HC
168-Pin
16Mx64/72
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Untitled
Abstract: No abstract text available
Text: IBM11M16735B IBM11M16735C 16M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s)
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IBM11M16735B
IBM11M16735C
168-Pin
16Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11M4730H IBM11M4730HB 4M x 72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 4Mx72 Dual Bank Fast Page Mode DIMM -Buffered inputs (except RAS, Data)
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IBM11M4730H
IBM11M4730HB
4Mx72
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: IBM13T4644MPB IBM13T8644MPB Preliminary 4M/8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 4/8Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency i Units Ì 3 | fcK | Clock Frequency
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IBM13T4644MPB
IBM13T8644MPB
4/8Mx64
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 T 1 6 4 9 N C 1M x 64 1 Bank SDRAM SO DIMM Features • 144 Pin em erging JE D E C S tandard, 8 Byte Sm all O utlin e D u al-In -lin e M em o ry M odule • P rog ram m a ble O peration: -C A S Latency: 1, 2, 3 • 1 M x64 S ynch ron ou s DR AM SO DIM M
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Untitled
Abstract: No abstract text available
Text: IBM11M8730HB 8M x 72 DRAM MODULE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 VSs/Vcc P^s)
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IBM11M8730HB
8Mx72
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 7 3 5 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank EDO Mode DIMM • System Performance Benefits: • Performance: -Buffered inputs (except RAS, Data)
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4Mx72
11M4735HB
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T35W
Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,
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10DB2P
10DB4P
10DB6P
180B6A
T35W
transistor kt 606A
65e9 transistor
sr 6863 D
2SC965
CS9011
sr1k diode
KT850
TRANSISTOR st25a
transistor 130001 8d
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Untitled
Abstract: No abstract text available
Text: IB M 1 3 T 4 6 4 4 M C IB M 1 3 T 1 6 4 9 N C 1M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 1 Mx64 Synchronous DRAM SO DIMM • Performance: -10 CAS Latency j Units j 3 jf c K j Clock
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11N8645H IBM11N8735H 8M x 64/72 D RAM M O D U LE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity, or ECC applications • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs System Performance Benefits:
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IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
11N8645H
11N8735H
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 8 4 5 C B 16M x 72 Chipkill Correct DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 16Mx72 Chipkill Correct EDO DIMM • Performance: ! i^RAC i RAS Access Time jtcAC I CAS Access Time -5R I 50ns ! -6R j
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16Mx72
104ns
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