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    1X10S Price and Stock

    Panasonic Electronic Components M71X10S4YS

    STANDARD MOTOR 1575 RPM 200V
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    DigiKey M71X10S4YS Box 10
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    • 10 $97.57
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    RS M71X10S4YS Bulk 1
    • 1 $106.64
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    Panasonic Electronic Components M71X10S4LS

    STANDARD MOTOR 1575 RPM 100V
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    DigiKey M71X10S4LS Box 10
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    • 10 $95.1
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    RS M71X10S4LS Bulk 1
    • 1 $103.18
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    Panasonic Electronic Components M71X10SV4YS

    STANDARD MOTOR 1200 RPM 200V
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    DigiKey M71X10SV4YS Box 10
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    • 10 $132.151
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    RS M71X10SV4YS Bulk 1
    • 1 $144.45
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    Panasonic Electronic Components M71X10SV4LS

    STANDARD MOTOR 1200 RPM 100V
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    DigiKey M71X10SV4LS Box 10
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    • 10 $127.2
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    RS M71X10SV4LS Bulk 1
    • 1 $137.54
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    Phoenix Contact STEP-DIODE/5-24DC/2X5/1X10

    Redundancy module - 5 ... 24 V DC - 2x 5 A - 1x 10 A
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    Onlinecomponents.com STEP-DIODE/5-24DC/2X5/1X10 11
    • 1 $59.43
    • 10 $55.29
    • 100 $52.83
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    1X10S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2 Wavelength Laser Diode

    Abstract: laser 850 vcsel array
    Text: AVAP - 1x10SM Single-mode VCSEL array Features • • • • • 1x10 VCSEL array 850 nm wavelength range Single-mode emission High wavelength uniformity Other configurations available on request Electro-optical characteristics for individual lasers (T = 25°C)


    Original     		PDF 1x10SM 1x10SM 2 Wavelength Laser Diode laser 850 vcsel array

    Untitled

    Abstract: No abstract text available
    Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly


    OCR Scan     		PDF HC80805 1x10s 1x109 1x102upsets/module-day) BADDR11 BARRD10 BDISCRI03 BDISCRI02 BDISCRI01 BADDR21

    HS-26C31MS

    Abstract: 26C31M HS1-26C31MSR HS26C31ms harris HS-26C31MS ER3401
    Text: HS-26C31MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver December 1992 Features Pinouts • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si - Dose Rate Upset > 1x10s RAD/Sec (20nS Pulse) HS1-26C31MSR 16 PIN CERAMIC DUAL-IN-LINE


    OCR Scan     		PDF HS-26C31MS HS1-26C31MSR 1x10s RS-422 HS-26C31MS 10sA/cm2 110nmx100nm 26C31M HS26C31ms harris HS-26C31MS ER3401

    Untitled

    Abstract: No abstract text available
    Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02


    OCR Scan     		PDF HC6464 24-Pin 1x10s 1x101 PIN23

    6216 sram

    Abstract: No abstract text available
    Text: b3E D SRAMs M5 5 1 Ô7 2 DÜQQ^Dñ HONEYUELL/ S Honeywell b?b « H 0 N 3 S E C 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2|im Process • Typical 45 ns Access T im e • Total Dose Hardness through 1x10s rad S i0 2


    OCR Scan     		PDF HC6216 1x10s 1x109 1x1012 6216 sram

    socket g34 pinout

    Abstract: smd marking WMM
    Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02


    OCR Scan     		PDF HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM

    Untitled

    Abstract: No abstract text available
    Text: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)


    OCR Scan     		PDF HC6856 1x10s 1x109 36-Lead 28-Lead HC6856/1 1E-10 S00049

    VF150

    Abstract: valpey VF150 valpey OCXO sma VF600 VFHS85 ocxo tcxo V/VF500
    Text: MATEC CORP/ VALPEY-FISHER | 3 lg E » • 5 Abl~D a ^rò 0 D O Ìflà ~ Q ~ W V P c" VF500 Series DISCRETE TEMPERATURE COMPENSATED CRYSTAL OSCILLATORS TCXO Valpey-Fisher Temperature Compensated Crystal Oscillators (TCXOs) use select components which react to thermal


    OCR Scan     		PDF VF500 137II VF150 valpey VF150 valpey OCXO sma VF600 VFHS85 ocxo tcxo V/VF500

    2N7268

    Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
    Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs


    OCR Scan     		PDF IRHM7150 IRHM815Q IRHM8150 JANSRSN7S68 1x106 1x105 IRHM71500 IRHM7150U 2N7268 h206 h208

    Hk612

    Abstract: No abstract text available
    Text: . _ . j| to b# dtoqlBMd. nprwluoad a r u—d, in vhoto er tn port, for m n u l M i n or Mfe by o t m m oHm t toon Am phm l - - * ” -1-1 *• “ —1 no right b granted to M m Customer SECTION 4 C -C 3 REVISIONS SYM Drawing


    OCR Scan     		PDF HK3854 HK4281 HK6127 S--SN--00 5ATA\CSATA0O1Q22SXX-1JJWO Hk612

    Untitled

    Abstract: No abstract text available
    Text: MIC2171 MIC2171 100kHz 2.5A Switching Regulator Preliminary Information General Description Features The MIC2171 is a complete 100kHz SM PS current-mode controller with an internal 65V 2.5A power switch. 2.5A, 65V internal switch rating 3V to 40V input voltage range


    OCR Scan     		PDF MIC2171 100kHz MIC2171 LM2577 LT1171/LM2577 T0-220 O-263

    Untitled

    Abstract: No abstract text available
    Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled


    OCR Scan     		PDF DS3480-2 MA9187 MA9187 37bfi522

    Untitled

    Abstract: No abstract text available
    Text: p P jp i G E C P L E S S E Y ADVANCE DATA SE MI CONDU CTORS DS3694-2.1 MA9564 HIGH TRANSIENT/RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9564 64k Static RAM is configured as 8192 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.Sjim technology. The device has been designed specifically for high


    OCR Scan     		PDF DS3694-2 MA9564 MA9564 MC6364 7CL00 SCL00 9CL00 0023T01

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P I E S S E Y SE M I CO N D U CT O RS DS3578-2 4 MA2910 RADIATION HARD MICROPROGRAM CONTROLLER The industry standard MA2910 Microprogram Controller forms part of the MA2900 family of devices. Offering a building block approach to microcomputer and controller design, each device in the range is expandable


    OCR Scan     		PDF DS3578-2 MA2910 MA2910 MA2900 Cobalt-60 Mil-Std-883 1x10s 1x101 GS010%

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead

    HR2340

    Abstract: sram pull down honeywell memory sram
    Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec


    OCR Scan     		PDF 1x106 1x103rad 1x1012rad HR2340 HR2340 sram pull down honeywell memory sram

    DQ4-21

    Abstract: No abstract text available
    Text: b3E D • 45S1Û7E ODDDTB? HONEYI i l ELL/ S Military Products Honeywell 477 ■ H 0 N 3 S E C Advance Information 8K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6364 FEATURES OTHER RADIATION Fabricated with RICMOS" Silicon on Insulator SOI 1.2 urn Process


    OCR Scan     		PDF 1x10s HX6364 DQ4-21

    PURE 5001

    Abstract: SP 5001 IC K6275
    Text: f Amphonol Corporation and • d*ltv«r«d o not to bi dlwlon d, reproduced or und, In ire or aalo by anyono ottior than Amphonol e»rt, & that no right 1» granted to dtseloM R E V IS IO N S Customer SYM Drawl >ionn ECN DESCRIPTIO N A HK4071 DATE APPR O VED


    OCR Scan     		PDF HK4071 K6275 \DRAWING\SATA\CSATA0010247X-1 PURE 5001 SP 5001 IC K6275

    K627

    Abstract: IC TRAY K6275
    Text: Thl* document la the property of Amphenol Corporation ond la deltvared on the « x p n n condition that II I* not to bi dlnloeed, reproduced or imd, lr whole or In pari, for manufacture or aale by anyona oltiar than Amphenol Corporation without tta prior concert. & that no right 1» grantad to dtseloM


    OCR Scan     		PDF K4958 08/05/1C 08/05/1C \DRAWING\SATA\CSATA0010271 SATA-001-0271 K627 IC TRAY K6275

    Untitled

    Abstract: No abstract text available
    Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		PDF IRHY9130CM JANSR2N7382 MIL-PRF-19500/615] Liguria49

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan     		PDF IRHE7S30 IRHE8S30 1x105 1x106 H-109 IRHE7230, IRHE8230 H-110

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability


    OCR Scan     		PDF IRHN7450 IRHN8450 1x106 H-333 IRHN7450, IRHN8450 5S452 H-334

    Untitled

    Abstract: No abstract text available
    Text: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology


    OCR Scan     		PDF IRHM7260 IRHM8260 200Volt, 070ft, 55MS2 500X1

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.676A INTERNATIONAL RECTIFIER I @ R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRH7130 IRHB130 MEGA RAD HARD 100 Volt, 0.180, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown


    OCR Scan     		PDF IRH7130 IRHB130 1x10s IRH7130, IRH8130 S5452