1SV276
Abstract: No abstract text available
Text: 20010110 1SV276 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz～3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ～ 4 V
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1SV276
55E-16
00E-04
485E-11
00E-09
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Untitled
Abstract: No abstract text available
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics
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1SV276
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1SV276
Abstract: No abstract text available
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)
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1SV276
1SV276
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1SV276
Abstract: No abstract text available
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics
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1SV276
1SV276
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1SV276
Abstract: No abstract text available
Text: 1SV276 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV276 ○ UHF 帯無線 VCO 用 単位: mm • 容量変化比が大きい。 : C1V/C4V = 2.0 標準 • 直列抵抗が小さい。 : rs = 0.22 Ω (標準) • 2 端子小型外囲器なので､チューナの小型化に適しています。
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1SV276
1SV276
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Untitled
Abstract: No abstract text available
Text: Product specification 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25
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1SV276
OD-323
Capacitanc75
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marking tl
Abstract: diode marking tl diode smd marking 22 1SV276
Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV276 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V = 2.0Typ. Low Series Resistance:rs = 0.22 +0.1 2.6-0.1 1.0max Typ.) 0.375 +0.05 0.1-0.02
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1SV276
OD-323
10max
marking tl
diode marking tl
diode smd marking 22
1SV276
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02 diode R-1
Abstract: 1SV276
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)
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1SV276
02 diode R-1
1SV276
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1SV276
Abstract: No abstract text available
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)
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1SV276
1SV276
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SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
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SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
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Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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tcxo philips 4322
Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV276
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Untitled
Abstract: No abstract text available
Text: 1SV276 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 S V2 7 6 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.0 Typ. Low Series Resistance : r$ = 0.22il (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)
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1SV276
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1SV276
Abstract: No abstract text available
Text: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package M A X IM U M RATINGS (Ta = 25°C)
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1SV276
1SV276
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Untitled
Abstract: No abstract text available
Text: 1SV276 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 VCO FOR UHF BAND RADIO Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.0 Typ. • Low Series Resistance : rs = 0.220 (Typ.) • Small Package 0 ± 0 .0 5 MAXIMUM RATINGS (Ta = 25°C)
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1SV276
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1SV276
Abstract: 300E
Text: 1SV276 TOSHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0 ± 0 .0 5 M A X IM U M RATINGS (Ta = 25°C)
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1SV276
1SV276
300E
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1SV276
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV276
470MHz
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iv /C 4v = 2.0 Typ. Low Series Resistance : rs = 0.22H (Typ.) Small Package 0±0.05 M A X IM U M RATINGS (Ta = 25°C)
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1SV276
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marking 16
Abstract: No abstract text available
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV276 VCO FOR UHF BAND RADIO • • • High C apacitance Ratio : C j V ''C 4 V = 2.0 Typ. Low Series R esistance : r s = 0.22Sl (Typ.) Sm all Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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1SV276
marking 16
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Untitled
Abstract: No abstract text available
Text: 1SV276 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)
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1SV276
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