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    Untitled

    Abstract: No abstract text available
    Text: 1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Excellent in Forward Current and Forward Voltage • Characteristics: VF 3 = 0.8V (typ.) Fast Reverse Recovery Time: IR = 50µA (Max.) • Small Total Capacitance:CT = 46pF (typ.)


    Original     		PDF 1SS404WS OD-323 OD-323

    Untitled

    Abstract: No abstract text available
    Text: 1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 R9 Top View Marking Code: "R9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 1SS404WS OD-323 OD-323

    1SS404WS

    Abstract: No abstract text available
    Text: 1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 R9 Top View Marking Code: "R9" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		PDF 1SS404WS OD-323 OD-323 1SS404WS

    Untitled

    Abstract: No abstract text available
    Text: 1SS404WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Excellent in Forward Current and Forward Voltage • Characteristics: VF 3 = 0.8V (typ.) Fast Reverse Recovery Time: IR = 50µA (Max.) • Small Total Capacitance:CT = 46pF (typ.)


    Original     		PDF 1SS404WS OD-323 OD-323