Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1SS401 Search Results

    1SS401 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS401 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original PDF
    1SS401 Kexin High Speed Switching Application Original PDF
    1SS401 Toshiba Diode Original PDF
    1SS401 Toshiba Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: low VF; Internal connection: single; V R (V): (max 20) Original PDF
    1SS401 TY Semiconductor High Speed Switching Application - SOT-323 Original PDF
    1SS401 Unknown Silicon Diode Scan PDF
    1SS401(TE85L,F) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 20V 300MA USM Original PDF

    1SS401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401 SC-70 300mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Low reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol


    Original     		PDF OT-323 1SS401 OT-323 300mA

    030619EAA

    Abstract: 1SS401
    Text: 1SS401 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401 SC-70 030619EAA 1SS401

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401 SC-70

    ISS401

    Abstract: 1SS401
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 Schottoky DIODES SOT-323 FEATURES Low forward voltage : VF=0.38V typ. Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) 1.ANODE 2. NC 3. CATHODE


    Original     		PDF OT-323 1SS401 OT-323 300mA ISS401 ISS401 1SS401

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original     		PDF 1SS401 OT-323, MIL-STD-202,

    marking D9 diode

    Abstract: SOT 323 marking D9 transistor marking D9 1SS401 040G MARKING C SOT-323 sot323 marking K
    Text: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS401 FEATURES Pb z Small total capacitance. z Low reverse current. z Low forward voltage:VF=0.38V typ . Lead-free APPLICATIONS z For general purpose applications. SOT-323 ORDERING INFORMATION


    Original     		PDF 1SS401 OT-323 300mA BL/SSSKF014 marking D9 diode SOT 323 marking D9 transistor marking D9 1SS401 040G MARKING C SOT-323 sot323 marking K

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 Schottoky Diode SOT-323 1.ANODE 2. NC 3. CATHODE Features — — — Low forward voltage : VF=0.38V typ. Low reverse current : IR=50uA(max) Small total capacitance : CT =46pF(typ.) Dimensions in inches and (millimeters) MARKING: Maximum Ratings @TA=25℃


    Original     		PDF 1SS401 OT-323 300mA

    marking D9 diode

    Abstract: transistor marking D9 marking D9 marking 38 Rm25 maximum current rating of diodes SMD MARKING 1SS401
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATIONS 1SS401 Features Low forward voltage:VF 3 = 0.38 V(Typ) Low reverse current:IR = 50 A Small total capacitance:CT = 46 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit V RM 25 V Reverse voltage


    Original     		PDF 1SS401 marking D9 diode transistor marking D9 marking D9 marking 38 Rm25 maximum current rating of diodes SMD MARKING 1SS401

    1SS401

    Abstract: No abstract text available
    Text: 1SS401 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS401 High Speed Switching Applications Unit in mm l Low forward voltage : VF 3 = 0.38 V (typ.) l Low reverse current : IR = 50µA (max) l Small total capacitance : CT = 46 pF (typ.)


    Original     		PDF 1SS401 SC-70 000707EAA2 1SS401

    marking D9

    Abstract: No abstract text available
    Text: 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 25 Volts FORWARD CURRENT – 0.3 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA


    Original     		PDF 1SS401 OT-323 OT-323 J-STD-020D 2002/95/EC 1SS401 marking D9

    marking D9

    Abstract: 1SS401 J-STD-020D
    Text: 1SS401 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 25 Volts FORWARD CURRENT – 0.3 Ampere FEATURES SOT-323 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-323 Dim. A A1 b c D E E1 e e1 L MECHANICAL DATA


    Original     		PDF 1SS401 OT-323 OT-323 J-STD-020D 2002/95/EC marking D9 1SS401 J-STD-020D

    1SS401

    Abstract: No abstract text available
    Text: 1SS401 東芝ダイオード エピタキシャルショットキバリア形 1SS401 ○ 高速スイッチング用 z 順電圧が小さい。 z 逆電流が小さい。 z 端子間容量が小さい。 単位: mm : VF 3 = 0.38V (標準) : IR = 50 A (最大)


    Original     		PDF 1SS401 300mA 1SS401

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS401 Features Low forward voltage:VF 3 = 0.38 V(Typ) Low reverse current:IR = 50 A Small total capacitance:CT = 46 pF(Typ) Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Symbol Rating Unit V RM 25 V Reverse voltage


    Original     		PDF 1SS401

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit: mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401

    1SS401

    Abstract: No abstract text available
    Text: 1SS401 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS401 High Speed Switching Applications Unit in mm Low forward voltage : VF 3 = 0.38 V (typ.) Low reverse current : IR = 50µA (max) Small total capacitance : CT = 46 pF (typ.) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401 SC-70 000707EAA2 1SS401

    1SS401

    Abstract: No abstract text available
    Text: 1SS401 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS401 Unit in mm High Speed Switching Applications z Low forward voltage : VF 3 = 0.38 V (typ.) z Low reverse current : IR = 50 A (max) z Small total capacitance : CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS401 SC-70 1SS401

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    SS-401

    Abstract: No abstract text available
    Text: 1SS401 T O SH IB A TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS • • • Low Forward Voltage Low Reverse Current Small Total Capacitance 1 SS401 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE : VF 3 = 0.38 V (Typ.) : Ir = 50 fxA (Max.) : CT = 46 pF (Typ.)


    OCR Scan     		PDF 1SS401 SS401 SS-401

    Untitled

    Abstract: No abstract text available
    Text: 1SS401 T O SH IB A TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS • • • 1 SS401 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Low Forward Voltage Low Reverse Current Small Total Capacitance Unit in mm VF 3 = 0.38 V (Typ.) Ir = 50 fj.A (Max.) CT = 46 pF (Typ.)


    OCR Scan     		PDF 1SS401 SS401 SC-70

    1SS401

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1SS401 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS401 HIGH SPEED SWITCHING APPLICATIONS Unit in mm • Low Forward Voltage : VF 3 —0.38 V (Typ.) • Low Reverse Current : I r = 50 juA (Max.) • Small Total Capacitance


    OCR Scan     		PDF 1SS401 SC-70 1SS401