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    1SS399 Price and Stock

    Toshiba America Electronic Components 1SS399TE85LF

    Diodes - General Purpose, Power, Switching 0.1A 400V Switching High-Speed Diode
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    Mouser Electronics 1SS399TE85LF
    • 1 $0.56
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    Quest Components 1SS399TE85LF 1,742
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    Toshiba America Electronic Components 1SS399-TE85L

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    Bristol Electronics 1SS399-TE85L 6,471
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    Toshiba Corporation 1SS399(T5LKEHIN,F)

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    Bristol Electronics 1SS399(T5LKEHIN,F) 3,000 9
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    Toshiba America Electronic Components 1SS399(T5LKEHIN,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS399(T5LKEHIN,F) 2,400
    • 1 $0.8
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    Toshiba America Electronic Components 1SS399(TE85L,F)

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    Quest Components 1SS399(TE85L,F) 2,135
    • 1 $0.675
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    Chip1Stop 1SS399(TE85L,F) Cut Tape 6,420
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    1SS399 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS399 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SS399 Toshiba DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    1SS399 Toshiba DIODE Scan PDF
    1SS399TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 400V 100MA SMQ Original PDF

    1SS399 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		PDF 1SS399 SC-61 1SS399

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		PDF 1SS399 SC-61 1SS399

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 10mstransportation 1SS399

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0 V typ. z High voltage : VR = 400 V (min) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		PDF 1SS399 SC-61 1SS399

    SC61 equivalent

    Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 100mA SC61 equivalent TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		PDF 1SS399 SC-61 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		PDF 1SS399 SC-61 10msditions 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0 V typ. z High voltage : VR = 400 V (min) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		PDF 1SS399 SC-61

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS399 ○ 高電圧スイッチング用 z z z z 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm : VF = 1.0 V 標準


    Original     		PDF 1SS399 1SS399

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		PDF SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    2fu smd transistor

    Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG02 O-220SM CRG01 CRG04 CMG03 2fu smd transistor 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS399 1 SS399 TO SHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr = 1.0V Typ. :V r = 400V (Min.)


    OCR Scan     		PDF 1SS399 SS399 SC-61 SC-61

    1SS399

    Abstract: No abstract text available
    Text: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)


    OCR Scan     		PDF 1SS399 SC-61 300pi 961001EAA2' 1SS399

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TO SHIBA 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr = 1.0V Typ. :V r = 400V (Min.)


    OCR Scan     		PDF 1SS399 SS399 SC-61 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS399 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.2 : Vp = 1.0V Typ. : V r = 400V (Min.)


    OCR Scan     		PDF 1SS399 SC-61 961001EAA2'