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    Toshiba America Electronic Components

    Toshiba America Electronic Components 1SS398TE85LF

    DIODE ARRAY GP 400V 100MA S-MINI
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    DigiKey 1SS398TE85LF Digi-Reel 44,979 1
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    Toshiba America Electronic Components 1SS396,LF

    DIODE ARR SCHOTT 40V 70MA S-MINI
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    DigiKey 1SS396,LF Digi-Reel 19,527 1
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    1SS396,LF Cut Tape 19,527 1
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    1SS396,LF Reel 12,000 3,000
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    Mouser Electronics 1SS396,LF 11,557
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    Verical 1SS396,LF 5,746 131
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    Arrow Electronics 1SS396,LF Cut Strips 5,746 16 Weeks 1
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    TTI 1SS396,LF Reel 3,000
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    Toshiba America Electronic Components 1SS394TE85LF

    DIODE SCHOTTKY 10V 100MA SC59
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    DigiKey 1SS394TE85LF Cut Tape 6,639 1
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    Mouser Electronics 1SS394TE85LF 10,746
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    Toshiba America Electronic Components 1SS393,LF

    DIODE ARR SCHOTT 40V 100MA SC-70
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    DigiKey 1SS393,LF Digi-Reel 5,807 1
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    1SS393,LF Cut Tape 5,807 1
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    1SS393,LF Reel 3,000 3,000
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    Mouser Electronics 1SS393,LF 9,355
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    Toshiba America Electronic Components 1SS392,LF

    DIODE ARR SCHOTT 40V 100MA SC-59
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    DigiKey 1SS392,LF Cut Tape 2,815 1
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    1SS392,LF Digi-Reel 2,815 1
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    Mouser Electronics 1SS392,LF 7,381
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    1SS39 Datasheets (63)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    1SS390 Kexin Band Switching Diodes Original PDF
    1SS390 PanJit Semiconductors Surface Mount Pin Diode Original PDF
    1SS390 ROHM DIODE SWITCHING DIODE 35V 0.1A 2EMD2 Original PDF
    1SS390 ROHM Band switching diode Original PDF
    1SS390 ROHM Band Switching Diode Original PDF
    1SS390 TY Semiconductor Band Switching Diodes - SOD-523 Original PDF
    1SS390 ROHM Various Diodes Scan PDF
    1SS390R-12K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    1SS390R-5K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    1SS390SMFHT2R ROHM Semiconductor BAND SWITCHING DIODES (AEC-Q101 Original PDF
    1SS390SMT2R ROHM Semiconductor BAND SWITCHING DIODES - 1SS390SM Original PDF
    1SS390T-12K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    1SS390T-5K PanJit Semiconductors SURFACE MOUNT PIN DIODE Original PDF
    1SS390TE61 ROHM DIODE SW 35V 100MA SOD-523 TR Original PDF
    1SS390TE61 ROHM DIODE SWITCHING DIODE 35V 0.1A 2EMD2 T/R Original PDF
    1SS391 Toshiba shottky barrier diode Original PDF
    1SS391 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS391 Toshiba DIODE Scan PDF
    1SS392 Kexin Low Voltage High Speed Switching Original PDF
    1SS392 Toshiba shottky barrier diode Original PDF

    1SS39 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS395 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 • • Small Package Low Forward Voltage : Vp 2 = 0.23V (Typ.) @Ijp = 5mA ± 0.1 1.25 ± 0.1 I* 3 oo + I - -ESt 2 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS395 SS395 PDF

    1SS393

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage


    Original     		1SS393 1SS393 PDF

    1SS391

    Abstract: No abstract text available
    Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA Small package : SC-61 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original     		1SS391 SC-61 1SS391 PDF

    1SS393

    Abstract: No abstract text available
    Text: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS393 SC-70 1SS393 PDF

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		1SS398 SC-59 1SS398 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1SS391 TOSHIBA DIODE 1 SS391 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • Low Forward Voltage Small Package 2 = 0.23V (Typ.) @IF = 5mA : SC-61 : VF M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		1SS391 SS391 SC-61 961001EAA2' PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS393 TOSHIBA TOSHIBA DIODE 1 SS393 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • Low Forward Voltage Low Reverse Current Small Package VF 3 = 0.54V (TYP.) Ir = 5^A (MAX.) SC-70 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS393 SS393 SC-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS392 SC-59 O-236MOD 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS396 SC-59 O-236MOD 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		1SS398 SC-59 O-236MOD 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS392 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS392 SC-59 PDF

    1SS398

    Abstract: No abstract text available
    Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching Applications Unit in mm Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min) Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance


    Original     		1SS398 SC-59 961001EAA2' 1SS398 PDF

    Schottky Diode Marking sc-70

    Abstract: No abstract text available
    Text: 1SS393 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max) Small package : SC-70 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS393 SC-70 Schottky Diode Marking sc-70 PDF

    1SS390

    Abstract: No abstract text available
    Text: 1SS390 SURFACE MOUNT PIN DIODE VOLTAGE POWER 35 Volts 200 mW FEATURES Very low series resistance at 100MHz 0.45 Ω typical@IF=2mA Low capacitance (0.8pF typical@VR=6V) Surface mount package ideally suited for automatic insertion Pb free product are available : 99% Sn above can meet RoHS


    Original     		1SS390 100MHz OD-523 MIL-STD-750 1SS390 PDF

    1SS397

    Abstract: No abstract text available
    Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		1SS397 SC-70 1SS397 PDF

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications l Low forward voltage : VF = 1.0V typ. l High voltage : VR = 400V (min.) Unit: mm l Fast reverse recovery time : trr = 0.5µs (typ.) l Small total capacitance


    Original     		1SS399 SC-61 1SS399 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS390 Diodes Band switching diode 1SS390 zApplication High frequency switching zExternal dimensions Unit : mm 0.8±0.05 zLead size figure (Unit : mm) 0.12±0.05 0.8 1.7 1.2±0.05 zFeatures 1) Ultra small mold type. (EMD2) 2) High reliability 1.6±0.1 0.6


    Original     		1SS390 OD-523 SC-79 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS390 Diodes Band switching diode 1SS390 zApplication High frequency switching zExternal dimensions Unit : mm 0.8 0.12±0.05 0.6 0.8±0.05 zLead size figure (Unit : mm) 1.6±0.1 1.2±0.05 1.7 zFeatures 1) Ultra small mold type. (EMD2) 2) High reliability


    Original     		1SS390 OD-523 SC-79 100with PDF

    1SS395

    Abstract: No abstract text available
    Text: TOSHIBA 1SS395 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS395 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjr 2 —0.23V (Typ.) @Ijr = 5mA 1.25 ± 0.1 3 oo + I - -EB 2 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS395 1SS395 PDF

    1SS399

    Abstract: No abstract text available
    Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications z Low forward voltage : VF = 1.0V typ. z High voltage : VR = 400V (min.) Unit: mm z Fast reverse recovery time : trr = 0.5 s (typ.) z Small total capacitance


    Original     		1SS399 SC-61 1SS399 PDF

    1SS394

    Abstract: No abstract text available
    Text: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original     		1SS394 O-236MOD SC-59 1SS394 PDF

    1SS390

    Abstract: No abstract text available
    Text: 1SS390 Diodes Band switching diode 1SS390 !External dimensions Units : mm !Applications High frequency switching CATHODE MARK 1.6±0.1 1.2±0.05 !Features 1) Extremely Small surface mounting type. (EMD2) 2) High reliability. !Construction Silicon epitaxial planar


    Original     		1SS390 SC-79 OD-523 100MHz 1SS390 PDF

    1SS394

    Abstract: No abstract text available
    Text: 1SS394 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS394 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


    Original     		1SS394 236MOD 100mA 1SS394 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS391 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 2 = 0.23V (typ.) @IF = 5mA z Small package : SC-61 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating


    Original     		1SS391 SC-61 PDF