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    1SS384 Price and Stock

    Toshiba America Electronic Components 1SS384TE85LF

    DIODE ARR SCHOTT 10V 100MA USQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS384TE85LF Reel 15,000 3,000
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    • 10000 $0.06334
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    1SS384TE85LF Cut Tape 3,840 1
    • 1 $0.35
    • 10 $0.214
    • 100 $0.1344
    • 1000 $0.08855
    • 10000 $0.08855
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    1SS384TE85LF Digi-Reel 1
    • 1 $0.35
    • 10 $0.214
    • 100 $0.1344
    • 1000 $0.08855
    • 10000 $0.08855
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    Mouser Electronics 1SS384TE85LF 7,190
    • 1 $0.4
    • 10 $0.28
    • 100 $0.116
    • 1000 $0.086
    • 10000 $0.059
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    Toshiba America Electronic Components 1SS384(TE85L,F)

    Small Signal Diode, 15V, 0.1A, Sot-343 Rohs Compliant: Yes |Toshiba 1SS384(TE85L, F)
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    Newark 1SS384(TE85L,F) Cut Tape 21,000 5
    • 1 $0.042
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    • 100 $0.042
    • 1000 $0.042
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    Quest Components 1SS384(TE85L,F) 1,340
    • 1 $0.61
    • 10 $0.61
    • 100 $0.61
    • 1000 $0.244
    • 10000 $0.244
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    Chip1Stop 1SS384(TE85L,F) Cut Tape 2,200
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    • 100 $0.0981
    • 1000 $0.0727
    • 10000 $0.068
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    EBV Elektronik 1SS384(TE85L,F) 19 Weeks 3,000
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    Toshiba America Electronic Components 1SS384(TE85L)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1SS384(TE85L) 1,489
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    Quest Components 1SS384(TE85L) 1,191
    • 1 $0.357
    • 10 $0.357
    • 100 $0.1607
    • 1000 $0.1071
    • 10000 $0.1071
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    1SS384 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS384 Toshiba Japanese - Diodes Original PDF
    1SS384 Toshiba shottky barrier diode Original PDF
    1SS384 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS384 Toshiba DIODE Scan PDF
    1SS384(TE85L,F) Toshiba 1SS384 - Diode Small Signal Schottky 15V 0.1A 4-Pin USQ T/R Original PDF
    1SS384TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 10V 100MA USQ Original PDF

    1SS384 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS384

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		PDF 1SS384 1SS384

    1SS384

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS384 1SS384

    1SS384

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS384 1SS384

    Untitled

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS384 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS384 10mitation,

    Untitled

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol


    Original     		PDF 1SS384 961001EAA2'

    1SS384

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS384 1SS384

    1SS384

    Abstract: No abstract text available
    Text: 1SS384 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS384 ○ 低電圧高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており 超高密度実装に最適です。


    Original     		PDF 1SS384 100mA 1SS384

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    39T0167

    Abstract: U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A
    Text: A B C D E F G H J K L M N DATE REL 9 EC NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU 1/3


    Original     		PDF DEC/07/04 J79495 39T0167 1/16W R1003 R1002 LMV431 R1004 39T0167 U-558 Socket AM2 ADP3205 rome 455D NO10V 1D93 ibm rome BI 335A

    cdb 400E

    Abstract: Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b
    Text: A B C D E F G H J K L M N DATE 9 APOLLO-9 PLANAR VER 0.60 REL RED RED M9/KINNERETH-R BASE DEC/26/2003 7 6 5 4 3 2 1 13R1151 A TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING MCH-M(1/4) MCH-M(2/4) MCH-M(3/4) MCH-M(4/4) DDR SO DIMM CONNECTOR 0


    Original     		PDF 13R1151 J46283 J46283A J46283B DEC/26/2003 1/16W 1/16W cdb 400E Memsic 2125 PCI4520 ADP3806 C401 class q 607p rome-1 planar 8C546 PMH4 CRYSTAL g 472b

    558B

    Abstract: S558-5999-U1 F ky U10 ADP3205 PMH4 C949
    Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E G F H J K L M N DATE 9 YUKON/KODIAK VER SE 10/20/03 PLANAR 10/20/2003 7 6 5 4 3 2 1 TITLE PAGE EC HISTORY CPU(1/3) CPU(2/3) CPU(3/3) ITP CONN VCCCPUCORE DECOUPLING GMCH-M(1/5) GMCH-M(2/5) GMCH-M(3/5) GMCH-M(4/5) GMCH-M(5/5)


    Original     		PDF AD1981B VINT16 C1000 C1001 558B S558-5999-U1 F ky U10 ADP3205 PMH4 C949

    73D31

    Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
    Text: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD


    Original     		PDF ICS954204 IDTCV139/CY28441 73GHz 87GHz/2AGHz/2 39T5202 400/533MHz 200-PIN 400/533MHz LM75X2 73D31 D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394

    PMH4

    Abstract: ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo
    Text: CR-1 : @DESIGN.J3E SCH_1 :PAGE1 A B C D E F G H J K L M N DATE 9 YUKON/KODIAK VER SE PLANAR 10/20/03 EC NO. P PART Q NO. VER.SE 9 DEVELOPMENT NO. Q/M 1 6 5 4 3 2 1 78 10/20/2003 8 7 / 8 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20.


    Original     		PDF AD1981B VINT16 C1000 C1001 PMH4 ADP3205 S558-599 t9 547B34 qm77 ky U10 357n c840 TP231005 ibm apollo

    BI 335A

    Abstract: PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B
    Text: A B C D E F G H J K L M N DATE DEV JUNEAU-5 PLANAR SIT 9 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 8 7 6 5 4 3 2 1 TITLE PAGE 45. EC HISTORY


    Original     		PDF OCT/25/04 VCC05 1/16W R1002 R1003 LMV431 R1004 BI 335A PC8394T PC8394 EZJ1V270GA IBM 88sa8040 88sa8040 adp3205 NLFC322522T-091M-GPF SI4435ADY KT 117B

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


    OCR Scan     		PDF 1SS384 SS384

    1SS384

    Abstract: EL marking
    Text: 1SS384 TOSHIBA TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) )Ijr = 5mA M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS384 961001EAA2' 1SS384 EL marking

    Untitled

    Abstract: No abstract text available
    Text: 1SS384 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 3 84 LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 2 = 0.23V (TYP.) (a)Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS384 961001E

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


    OCR Scan     		PDF 1SS384 SS384