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    1SS367 Search Results

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    1SS367 Price and Stock

    Toshiba America Electronic Components 1SS367,H3F

    DIODE SCHOTTKY 10V 100MA USC
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    DigiKey 1SS367,H3F Digi-Reel 40,290 1
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    1SS367,H3F Cut Tape 40,290 1
    • 1 $0.18
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    1SS367,H3F Reel 39,000 3,000
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    Avnet Americas 1SS367,H3F Reel 20 Weeks 3,000
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    • 10000 $0.02235
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    Mouser Electronics 1SS367,H3F 15,212
    • 1 $0.12
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    TTI 1SS367,H3F Reel 12,000 3,000
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    Toshiba America Electronic Components 1SS367(TPH3F)

    Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R - Tape and Reel (Alt: 1SS367TPH3F)
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    Avnet Americas 1SS367(TPH3F) Reel 40 Weeks 3,000
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    PRECI-DIP SSA 811-SS-003-30-678101-CLIP

    Headers & Wire Housings 6mm SR 3P SLC Connectors
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    Mouser Electronics 811-SS-003-30-678101-CLIP
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    PRECI-DIP SSA 811-SS-003-30-675101-CLIP

    Headers & Wire Housings 4.5mm SR 3P SLC Connectors
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    Mouser Electronics 811-SS-003-30-675101-CLIP
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    PRECI-DIP SSA 811-SS-003-30-676101-CLIP

    Headers & Wire Housings 5mm SR 3P SLC Connectors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 811-SS-003-30-676101-CLIP
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    • 1000 $1.86
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    Find more 1SS367 price and stock on Findchips.com

    1SS367 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS367 Kexin High Speed Switching Application Original PDF
    1SS367 Toshiba Japanese - Diodes Original PDF
    1SS367 Toshiba shottky barrier diode Original PDF
    1SS367 TY Semiconductor High Speed Switching Application - SOD-323 Original PDF
    1SS367 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS367 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS367 Toshiba DIODE Scan PDF
    1SS367,H3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 10V 100MA SC76 Original PDF
    1SS367TH3FT Toshiba 1SS367TH3FT - Diode Small Signal Schottky 15V 0.2A 2-Pin USC T/R Original PDF
    1SS367TPH3F Toshiba 1SS367TPH3F - 1SS367TPH3F Original PDF

    1SS367 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS367

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS367 1SS367

    Marking Code "s3" diode

    Abstract: S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode S3 DIODE schottky S3 marking DIODE Marking "s3" Schottky barrier Diode marking CODE 1M Marking Code s3 diode Marking s3 Schottky barrier 1SS367

    S3 marking DIODE

    Abstract: 1SS367
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original     		PDF 1SS367 OD-323 OD-323 S3 marking DIODE 1SS367

    Marking Code "s3" diode

    Abstract: MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application PINNING Features • DESCRIPTION PIN Low forward voltage: VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol


    Original     		PDF 1SS367 OD-323 OD-323 Marking Code "s3" diode MARKING 3M SOD-323 Marking "s3" Schottky barrier S3 marking DIODE 1SS367 Marking Code s3 diode

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF 3 = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25


    Original     		PDF 1SS367 OD-323 SC-70

    1SS367

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original     		PDF 1SS367 1SS367

    Untitled

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS367

    1SS367

    Abstract: marking S4 markingS4
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS367 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Small package: :SC-70 Low forward voltage :VF 3 = 0.23 V(Typ) @ IF = 5 mA +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475


    Original     		PDF 1SS367 OD-323 SC-70 1SS367 marking S4 markingS4

    Untitled

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original     		PDF 1SS367

    1SS367

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original     		PDF 1SS367 1SS367

    1SS367

    Abstract: No abstract text available
    Text: 1SS367 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS367 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS367 1SS367

    1SS367

    Abstract: No abstract text available
    Text: 1SS367 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS367 ○ 高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


    Original     		PDF 1SS367 100mA 1SS367

    3m sod

    Abstract: marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode
    Text: 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High Speed Switching 1 Cathode 2 Anode 2 1 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS367 OD-323 OD-323 3m sod marking 3m sod-323 S3 marking DIODE 1SS367 Marking Code "s3" diode

    K934

    Abstract: CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR
    Text: K²950G/K²950GU DATA ACCESS ARRANGEMENT CHIPSET HIGH PERFORMANCE, LOW COST, ALL SILICON DAA DATA ACCESS ARRANGEMENT FOR US (FCC), CANADA (DOC), and JAPAN (JATE) APPLICATIONS FEATURES ♦ High performance for modems up to V.34/ 33.6Kbps and V.90/56Kbps ♦ Low power consumption: 20mW active,


    Original     		PDF 950G/K 950GU 90/56Kbps K2934L UL1950 K2935U/ K2936U USB1300 220PF 73M2901 K934 CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU K936 k2950 Motorola modem schematic diagram 56k MARKING d4 SMD PNP TRANSISTOR

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    1SS367

    Abstract: marking OE MARKING L toshiba USC
    Text: 1SS367 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Low Forward Voltage : Vjn = 0.23V TYP. Unit in mm + 0.2 1.2 5 - 0. )Ijr = 5mA M. oo M A X IM U M RATINGS (Ta = 25°C) 4- i


    OCR Scan     		PDF 1SS367 1SS367 marking OE MARKING L toshiba USC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS367 TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TYP. @Ijr = 5mA MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Vn'llncr#» VRM 15 V Reverse Voltage


    OCR Scan     		PDF 1SS367

    Untitled

    Abstract: No abstract text available
    Text: 1SS367 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION • • 1 SS367 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse


    OCR Scan     		PDF 1SS367 SS367 Hv100

    Untitled

    Abstract: No abstract text available
    Text: 1SS367 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SSB67 HIGH SPEED SW ITCHING APPLICATION • • Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING UNIT Maximum (Peak) Reverse


    OCR Scan     		PDF 1SS367 SSB67