HN4C06J
Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2
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2SC4738
Abstract: HN2E02F 1SS352 HN2E02
Text: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance
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HN2E02F
150mA
1SS352
2SC4738
HN2E02F
HN2E02
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1SS352 equivalent
Abstract: 1SS352 2SC4666 HN2E01F
Text: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.)
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HN2E01F
150mA
1SS352
2SC4666
1SS352 equivalent
HN2E01F
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2SC4738
Abstract: HN2E02F 1SS352
Text: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance
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HN2E02F
150mA
1SS352
2SC4738
HN2E02F
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1SS352 equivalent
Abstract: No abstract text available
Text: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Unit: mm Q1 Low Forward Voltage Drop :VF 3 =0.98V(typ.) Fast Reverse Recovery Time :trr=1.6ns(typ.) Low Total Capacitance
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HN2E02F
150mA
1SS352
2SC4738
10esented
1SS352 equivalent
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Untitled
Abstract: No abstract text available
Text: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity
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HN2E04F
2SA1587
1SS352
120are
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1SS352
Abstract: 2SA1587 HN2E04F
Text: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity
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HN2E04F
-120V
2SA1587
1SS352
HN2E04F
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Untitled
Abstract: No abstract text available
Text: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Unit: mm Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)
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HN2E01F
150mA
1SS352
2SC4666
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1SS352 equivalent
Abstract: 1SS352 HN2E05J RN2104F
Text: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Interface Circuit Driver Circuit Applications Q1 Since bias resistor is built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of
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HN2E05J
RN2104F
1SS352
1SS352 equivalent
HN2E05J
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Untitled
Abstract: No abstract text available
Text: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Inverter Circuit ,Interface Circuit and Driver Circuit Applications Q1 Since bias resistance is built in the transistor,the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an
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HN2E05J
RN2104F
1SS352
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Untitled
Abstract: No abstract text available
Text: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Super High Speed Switching Application Interface Circuit Driver Circuit Applications Unit: mm Q1 Since bias resistor is built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of
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HN2E05J
RN2104F
1SS352
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Untitled
Abstract: No abstract text available
Text: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Unit: mm Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity
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HN2E04F
2SA1587
1SS352
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Untitled
Abstract: No abstract text available
Text: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)
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HN2E01F
150mA
1SS352
2SC4666
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HN2E02F
Abstract: 1SS352 2SC4738
Text: HN2E02F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E02F Super High Speed Switching Application Audio Frequency Amplifier Application AM Amplifier Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.) Low Total Capacitance
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HN2E02F
150mA
1SS352
2SC4738
HN2E02F
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Untitled
Abstract: No abstract text available
Text: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)
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HN2E01F
150mA
1SS352
2SC4666
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1SS352
Abstract: 2SA1587 HN2E04F
Text: HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Unit: mm Q1 High Voltage :VCEO= −120V High DC Current Gain : hFE =200~700 Good hFE Linearity
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HN2E04F
-120V
2SA1587
1SS352
HN2E04F
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5252 0.9V 1.5V led driver
Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
Text: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors
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BCE0030A
5252 0.9V 1.5V led driver
5252 F 0.9V 1.5V led driver
5252 F 0.9V - 1.5V led driver
lm2804
5-pin sot 353 Voltage Regulators
tc7wh125
5252 solar cell chip
e 420 dual jfet
TAH8N401K
2SK3376TT
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lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
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BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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SSM3J307T
Abstract: SSM3J328R SSM3J334R
Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g
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200-mA
BCE0030D
SSM3J307T
SSM3J328R
SSM3J334R
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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