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    1SS26 Search Results

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    1SS26 Price and Stock

    RAF Electronic Hardware 1061-SS-26

    SPRINGS & WASHERSBLACK OXIDE, ST
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    RAF Electronic Hardware 6911-SS-26

    SHOULDER SCREWBLACK OXIDE, STAIN
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    RAF Electronic Hardware 0821-SS-26

    CAPTIVE PANELBLACK OXIDE, STAINL
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    RAF Electronic Hardware M3441-SS-26

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    Samtec Inc ZW-05-11-S-S-262-450

    FLEXIBLE BOARD STACKING HEADER,
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    Mouser Electronics ZW-05-11-S-S-262-450 239
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    1SS26 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS26 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS26 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS265 Leshan Radio Company 35 V, band switching diode Original PDF
    1SS265 Leshan Radio Company High-speed switching diode Original PDF
    1SS265 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS265 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS265 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS267 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS268 Kexin VHF Tuner Band Switch Applications Original PDF
    1SS268 TY Semiconductor VHF Tuner Band Switch Applications - SOT-23 Original PDF
    1SS268 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS268 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS268 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS268 Toshiba DIODE STANDARD RECOVERY RECTIFIER 30V 0.05A 3(1-3G1F) Scan PDF
    1SS268 Toshiba Diode Silicon Epitaxial Planar Type Scan PDF
    1SS268 Toshiba DIODE (VHF TUNER BAND SWITCH APPLICATIONS) Scan PDF
    1SS268(TE85L) Toshiba DIODE STANDARD RECOVERY RECTIFIER 30V 0.05A 3(1-3G1F) T/R Scan PDF
    1SS268TE85L Toshiba 1SS268 - DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode Scan PDF
    1SS268TE85R Toshiba 1SS268 - DIODE SILICON, VHF BAND, MIXER DIODE, Microwave Mixer Diode Scan PDF
    1SS269 Kexin VHF Tuner Band Switch Applications Original PDF

    1SS26 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS265

    Abstract: No abstract text available
    Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1SS265 1-Sep-2009 100MHZ, DO-34 1SS265

    1SS265

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • 1SS265   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 150mW 35 Volt Band Switching Diode Low Differential Forward Resistance Low Diode Capacitance


    Original     		PDF 1SS265 150mW 100mA 350K/W 10mrage 100nA 1SS265

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1SS265   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Moisture Sensitivity Level 1 Low Differential Forward Resistance Low Diode Capacitance


    Original     		PDF 1SS265 150mW

    1SS265

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High-speed switching diode 1SS265 . 300mW DO-34 . Glass silicon switching diodes . We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V)


    Original     		PDF 1SS265 300mW DO-34 5000pcs/each 260mm 1SS265

    1SS265

    Abstract: 100MHZ
    Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1SS265 100MHZ, 1SS265 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS268 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Small Total capacitance: CT = 1.2pF Max 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (Typ.) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low series resistance: rs = 0.6 0.55 Features +0.1 1.3-0.1


    Original     		PDF 1SS268 OT-23

    1SS265

    Abstract: 100MHZ
    Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1SS265 802JIA Fax0755-8324 100MHZ, 1SS265 100MHZ

    1SS265

    Abstract: No abstract text available
    Text: 1SS265 HIGH SPEED SWITCHING DIODE Features Max. 0.45 • Glass sealed envelope Min. 27.5 Max. 1.9 • High speed • High reliability Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS265 DO-34 1SS265

    1SS265

    Abstract: No abstract text available
    Text: 1SS265 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage


    Original     		PDF 1SS265 100mA 1SS265

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1SS265   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Moisture Sensitivity: Level 1 per J-STD-020C Low Differential Forward Resistance


    Original     		PDF 1SS265 J-STD-020C 150mW

    Untitled

    Abstract: No abstract text available
    Text: 1SS269 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS269 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS + 0.5 2.5 “ 0.3 FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6D (Typ.) 1.5- a i 5


    OCR Scan     		PDF 1SS269

    toshiba diode 1A

    Abstract: 1SS268 Toshiba MRI 1SS26
    Text: 1SS268 TOSHIBA 1 SS268 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS268 SC-59 toshiba diode 1A 1SS268 Toshiba MRI 1SS26

    0A90

    Abstract: 2-1K261 1K188FM-1 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G 1K110
    Text: - * fi E fe R’ JAC B 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 1S747 1S748 1SS24 1SS25 1SS26 1SS27 1SS28 1SS 2 9 1SS30 1SS31 £ a £ 3 - '/ V 3 -'/V z .= .'/y * -'/y 3- — ' / V * = .'/y * .= .'/y a - ' / y = L ~ '/ y 3 .~ '/y


    OCR Scan     		PDF 1K34A 455KHz) lN34AfflS 40MHz) 1K110 1K188FM 1S188FMÃ 1K188FM-1 0A90 2-1K261 lN34A 1s188fm 1K60 1K261 OA90-M OA90-G

    1SS265

    Abstract: diode marking t34
    Text: Diode, band switching, leaded 1SS265 Dimensions Units : mm These ultra small diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 .l Features M- -+ • available in USD package •


    OCR Scan     		PDF 1SS265 DD1S44T 1SS265 diode marking t34

    1SS265

    Abstract: diode BAND
    Text: Diode, band switching, leaded 1SS265 Dimensions Units : mm These ultra small diodes are in a glass sealed envelope and are suitable for leatd mounting on printed circuit boards. Features é -+ - • available in USD package •


    OCR Scan     		PDF 1SS265 1SS265 diode BAND

    Untitled

    Abstract: No abstract text available
    Text: 1SS268 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 s S 2 68 Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : CFj,= i.2pF Max. • Low Series Resistance ; rg = 0,60 (Typ,) MAXIMUM RATINGS (Ta = 255C)


    OCR Scan     		PDF 1SS268 100MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS269 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 2 69 VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. » Small Total Capacitano CT = 1.2pF Max. • Low Series Resistance rs = 0.6H (Typ.) MAXIMUM RATINGS (Ta = 255C) SYMBOL


    OCR Scan     		PDF 1SS269 100MHz --100MHz

    1SS268

    Abstract: No abstract text available
    Text: 1SS268 SILICON EPITAXIAL PLANAR TYPE U nit in mm VHF TUNER B A N D SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Op = 1.2pF Max.¡ • Low Series Resistance : rs = 0.60 (Typ. -HO d d B +' - £2E M A X IM U M RATINGS (Ta = 2 5°C)


    OCR Scan     		PDF 1SS268 SC-59 100MHz 100MHz 1SS268

    Untitled

    Abstract: No abstract text available
    Text: 1SS268 TOSHIBA 1 SS268 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER B A N D SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Crp = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS268 SS268 100MHz

    Untitled

    Abstract: No abstract text available
    Text: 1SS269 SILICON EPITAXIAL PLANAR TYPE DIODE U nit in mm VH F TU N E R B A N D S W ITCH A PP LIC A TIO N S FEATURES : • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6fi (Typ.) M A X IM U M R ATIN G S (Ta = 25°C)


    OCR Scan     		PDF 1SS269 SC-59

    Untitled

    Abstract: No abstract text available
    Text: 1SS269 T O SH IB A 1 SS269 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : CT = 1.2pF Max. • Low Series Resistance : rs = 0.6n (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS269 SS269 100MHz

    toshiba diode 1A

    Abstract: 1SS268
    Text: 1SS268 TO SH IBA 1 SS268 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS FEATURES : • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS268 SC-59 toshiba diode 1A 1SS268

    0A90

    Abstract: 2-0A90-H 79M 18A 1K188FM-1 1K60 1s188fm 2-1K60 lN34A 1K34A OA90-M
    Text: - * fi E fe R’JAC B £ a £ 3 - '/ V 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 3 -'/V z .= .'/y * -'/y 3- — ' / V 1S747 1S748 1SS24 1SS25 1SS26 * = .'/y * .= .'/y 1SS27 1SS28 1SS 2 9 1SS30 1SS31 ISSI 57 ISSI 58 2-OA90-H 2-1K261


    OCR Scan     		PDF 1K34A 455KHz) lN34AfflS 40MHz) 1K110 1K188FM 1S188FMÃ 1K188FM-1 0A90 2-0A90-H 79M 18A 1K60 1s188fm 2-1K60 lN34A 1K34A OA90-M

    0A90

    Abstract: 1K60 2-1K261 1K188FM-1 1s188fm 2-0A90-H 1K110 OA90-M 1T261 2-1K60
    Text: - * fi E fe R’JAC B £ a £ 3 - '/ V 1K 3 4A 1K60 1K90 1K110 1K188FM 1K188FM-1 1K261 1S744 1S745 1S746 3 -'/V z .= .'/y * -'/y 3- — ' / V 1S747 1S748 1SS24 1SS25 1SS26 * = .'/y * .= .'/y 1SS27 1SS28 1SS 2 9 1SS30 1SS31 ISSI 57 ISSI 58 2-OA90-H 2-1K261


    OCR Scan     		PDF 1K34A 455KHz) lN34AfflS 40MHz) 1K110 1K188FM 1S188FMÃ 1K188FM-1 0A90 1K60 2-1K261 1s188fm 2-0A90-H OA90-M 1T261 2-1K60