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    1SS119 DIODE Search Results

    1SS119 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1SS119 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1SS119

    Abstract: 1SS119 diode Hitachi DSA002788
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A Z Rev. 1 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180A 1SS119 DO-34 1SS119 diode Hitachi DSA002788 PDF

    1SS119

    Abstract: No abstract text available
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180A 1SS119 PDF

    1SS119

    Abstract: No abstract text available
    Text: 1SS119 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • Low capacitance. C = 3.0 pF max • Short reverse recovery time.(Trr = 3.5 ns max) • Peak reverse voltage:max. 35 V • Pb / RoHS Free 1.00 (25.4) min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode


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    1SS119 DO-34 1SS119 PDF

    1SS119

    Abstract: Hitachi DSA00340
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180B Z Rev.2 Sep. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180B 1SS119 Hitachi DSA00340 PDF

    1SS119

    Abstract: ECG SEMICONDUCTOR DATA BOOK HITACHI DIODE DSA003641
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180B Z Rev.2 Sep. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180B 1SS119 ECG SEMICONDUCTOR DATA BOOK HITACHI DIODE DSA003641 PDF

    1SS119

    Abstract: 1SS119-14 Hitachi DSA00216
    Text: 1SS119-14 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-970 Z Rev.0 Sep. 2000 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119-14 ADE-208-970 1SS119 1SS119-14 Hitachi DSA00216 PDF

    1SS119

    Abstract: Hitachi DSA002712
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-180A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180A 1SS119 DO-34 Hitachi DSA002712 PDF

    1ss119

    Abstract: Hitachi DSA0014
    Text: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching Rev. 1 Aug. 1995 Features Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time. (trr =3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    ADE-208-180A 1SS119 DO-34 1ss119 Hitachi DSA0014 PDF

    1SS119

    Abstract: GRZZ0002ZC-A REJ03G0564-0300 1SS119 diode
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 Previous: ADE-208-180B Rev.3.00 Mar 23, 2005 Features • Low capacitance. (C = 3.0 pF max) • Short reverse recovery time. (trr = 3.5 ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 REJ03G0564-0300 ADE-208-180B) GRZZ0002ZC-A m5-900 Unit2607 1SS119 GRZZ0002ZC-A REJ03G0564-0300 1SS119 diode PDF

    1-450-358-11

    Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
    Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.


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    TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE PDF

    1SS119

    Abstract: 1SS119 diode
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    do5-900 Unit2607 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    do5-900 Unit2607 PDF

    1SS119

    Abstract: GRZZ0002ZC-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    d5-900 Unit2607 1SS119 GRZZ0002ZC-A PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


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    2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    marking code V6 33 surface mount diode

    Abstract: philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379
    Text: 2004.4 Renesas Diodes Status List Topic—Low-voltage Variable Capacitance Diode Series •············2 Index ·····························································································3


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    ADE-508-010A ADE-508-016 ADE-508-017 HVL355B HVL358B HVL368B HVL375B HVL385B marking code V6 33 surface mount diode philips surface mount zener diode v6 zener diode application IPS302 04BZ 1w402 DIODE marking S4 59A marking 513 SOD-323 MARKING 621 SOD-323 1w379 PDF

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent PDF

    1SS119

    Abstract: No abstract text available
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching Features Outline • Low capacitance. C=3.0pF max • Short reverse recovery time, (trr =3.5ns max) • S m all g lass p ac k ag e (M HD ) en ab les easy mounting and high reliability. <3= - f


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    1SS119 1SS119 PDF

    1SS119

    Abstract: No abstract text available
    Text: ADE-208-180A Z 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI Features Rev, 1 Aug. 1995 Outline • Low capacitance. (C=3.0pF max) • Short reverse recovery time, (trr =3.5ns max) • Sm all g la ss p ackage (M H D ) en a b les ea sy


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    ADE-208-180A 1SS119 1SS119 ISSI19 DO-34 PDF

    1SS119

    Abstract: No abstract text available
    Text: 1SS119 Silicon Epitaxial Planar Diode for High Speed Switching HITACHI ADE-208-180A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability.


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    1SS119 ADE-208-180A DO-34 1SS119 PDF

    DIODE S4 29

    Abstract: No abstract text available
    Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


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    PDF

    iss86

    Abstract: 1SS119
    Text: DIODE SERIES •î i t | ' > a 7 K Schottky barrier diodes for detectors & mixers Ratings Application Package Code DO-35 Detector switching Type No. isstoe 1SS108 1SS196 10 30 max 4.5 30 15 30 3 4.5 1.0 15 3 35 ‘ 35 ‘ 30 15 15 30 15 [0.6] [0.7] 1.0 [10]


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    DO-35 1SS108 1SS196 1SS199 DO-35 1SS82 1SS83 HSS81 HSS82 HSS83 iss86 1SS119 PDF

    FC54M

    Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
    Text: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460


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    DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41" PDF