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    Text: Advanced Power Electronics Corp. 1R803GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D SO-8 Compatible with Heatsink Low On-resistance G BV DSS 30V R DS ON 1.9mΩ ID RoHS-compliant, halogen-free 170A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with


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    PDF AP1R803GMT-HF-3 AP1R803 1R803GMT