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    1PS SOT Search Results

    1PS SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    1PS SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC 61000-4-4

    Abstract: 1SMB5913BT3 HSMBJ5913B smaj5.0 diodes SMBJ5913B TVS SMBJ 1PMT4099 1PMT4614 1PMT5920BT3 CDLL3016B
    Text: Microsemi Black text = Direct cross VOLTAGE REGULATORS Green text = Great match, very slight variation see comments voltage tolerance is 5% unless stated otherwise Device/Series S Package Vz Range (V) Red text = indirect match (similar part - may require


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    PDF 1PMT5920BT3 1PMT4614 1PMT4099 IEC 61000-4-4 1SMB5913BT3 HSMBJ5913B smaj5.0 diodes SMBJ5913B TVS SMBJ 1PMT4099 1PMT4614 1PMT5920BT3 CDLL3016B

    Untitled

    Abstract: No abstract text available
    Text: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options


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    PDF OT223/SOT89 2N7002*

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V 3 48 - 25.000MHz TR


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    PDF 20ppm 000MHz 100ppm 50ppm 25ppm MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V


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    PDF 760MHz 20ppm 100ppm 50ppm 25ppm MIL-STD-883D

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V 3 48 - 25.000MHz TR


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    PDF 20ppm 000MHz 100ppm 50ppm 25ppm MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT A AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS LOW JITTER TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V


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    PDF 20ppm 000MHz 100ppm 50ppm 25ppm MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±25ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLAINT 3.3±0.165V


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    PDF 760MHz 25ppm 100ppm 50ppm 880MH4 MIL-STD-883D

    Untitled

    Abstract: No abstract text available
    Text: SOT SERIES 5X7 CERAMIC SMT 6 PAD LVDS CRYSTAL OSCILLATOR RoHS COMPLIANT PART NUMBERING GUIDE SOT SERIES FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ SOT B 3 48 – 77.760MHz TR AVAILABLE TO ±20ppm MINIATURE PACKAGE LVDS TRI-STATE FUNCTION TAPE AND REEL RoHS COMPLIANT 3.3±0.165V


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    PDF 760MHz 20ppm 100ppm 50ppm 25ppm MIL-STD-883D

    EFT 323

    Abstract: FOOTPRINT MELF TVS diode MELF BZV55 SOD-123 BZV55 Series IEC 1000-4-2 ESD vishay melf 2 melf melf footprint smaj5.0 diodes
    Text: Vishay Black text = Direct cross VOLTAGE REGULATORS Green text = Great match, very slight variation see comments voltage tolerance is 5% unless stated otherwise Red text = indirect match similar part - may require testing to verify specs , will work for most


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    PDF BZV55 BZV55-B, 5/50ns) GSOT03 8x20us) GL05T SL05T1 EFT 323 FOOTPRINT MELF TVS diode MELF BZV55 SOD-123 BZV55 Series IEC 1000-4-2 ESD vishay melf 2 melf melf footprint smaj5.0 diodes

    1ps sot

    Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 847PN OT-363 Q62702-C2374 May-12-1998 1ps sot bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363

    bc 104 npn transistor

    Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


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    PDF 847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c

    BC847PN SOT363

    Abstract: VPS05604 BC847PN Marking 1ps sot
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 VPS05604 BC847PN Marking 1ps sot

    BC847PN SOT363

    Abstract: H12E BC847PN VPS05604
    Text: BC847PN NPN/PNP Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    PDF BC847PN VPS05604 OT-363 EHA07193 EHA07177 OT363 EHP00365 EHP00364 EHP00368 BC847PN SOT363 H12E BC847PN VPS05604

    Marking 1ps sot

    Abstract: VPS05604
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation


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    PDF 847PN VPS05604 OT-363 EHA07193 EHA07177 OT-363 EHP00365 EHP00364 EHP00368 Marking 1ps sot VPS05604

    Marking 1ps sot

    Abstract: marking 1ps 1Ps MARKING CODE marking 297 sot-23 sot-23 marking 297 sot-23 297 LF MARKING CODE SOT 23 1ps sot
    Text: Central" CMPD2005S Semiconductor Corp. DUAL, IN SERIES HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for


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    PDF CMPD2005S OT-23 100pA 100mA 200mA 31-October OT-23 Marking 1ps sot marking 1ps 1Ps MARKING CODE marking 297 sot-23 sot-23 marking 297 sot-23 297 LF MARKING CODE SOT 23 1ps sot

    BAV170

    Abstract: JXs sot
    Text: Silicon Low Leakage Diode Array BAV170 • Low Leakage applications • Medium speed switching times • Common cathode Type Marking O rdering code 8-m m tape Package BAV170 JXs Q62702-A920 SOT 23 Maximum Ratings D escription Symbol Reverse voltage VR BAV170


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    PDF BAV170 Q62702-A920 BAV170 100ns JXs sot

    Marking 1ps sot

    Abstract: No abstract text available
    Text: Central CMFD2004Ì Semiconductor Corp. DUAL ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFD2004i consists of two electrically Isolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is


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    PDF CMFD2004Ì CMFD2004i OT-143 CPD80 OT-143 Marking 1ps sot

    tic 223

    Abstract: A912 hs sot223 A9-13 1ps sot UM 78A
    Text: B A S 78A. B A S 78D Silicon Switching Diodes • Switching applications • High breakdow n voltage T ype M a rkin g O rd e rin g c o d e 1 2 -m m ta p e Package* BAS78A BAS78A Q62702 - A910 SOT-223 BAS78B BAS78B Q62702 - A 9 1 1 SOT-223 BAS78C BAS78C


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    PDF BAS78A BAS78B BAS78C BAS78D Q62702 tic 223 A912 hs sot223 A9-13 1ps sot UM 78A

    BAW156

    Abstract: No abstract text available
    Text: Silicon Low Leakage Diode Array BAW156 • Low Le a k a g e applications • M edium sp e e d switching times • C o m m o n anode A Type M a rk in g O rd e rin g c o d e 8 -m m ta p e Package B A W 1 56 JZs Q62702-A922 SOT 23 M a x im u m R a tin g s D e s c rip tio n


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    PDF BAW156 Q62702-A922 BAW156

    785nm mitsubishi

    Abstract: No abstract text available
    Text: MITSUBISHI LA S E R DIODES PRELIMINARY Nclics;:Ti-HSisrvotalinsi spécification cvyo |V| fcwO S o ;n e tfafam etnc; ¿fw ts a re su b iö u t tu tíia rra e : TYPE NAME 7f c c d ic c *1 I _ FOR OPTICAL INFORMATION SYSTEMS ML60127R, ML601J27 DESCRIPTION FEATURES


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    PDF ML60127R, ML601J27 L6XX27 785nm Po-50m RL-10 ML60127R ML6XX27 785nm mitsubishi

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3BQ Silicon Low Leakage Diode Array 001bS43 b « S IP T-Ol-OI BAV170 SIEMENS/ SPCLi SEMICON DS _ • Low Leakage applications • Medium speed switching times • Common cathode Type Marking Ordering code 8-mm tape Package BAV170


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    PDF 023b3BQ 001bS43 BAV170 Q62702-A920 T-01-09 23b32Ã 001b54b

    T0311

    Abstract: No abstract text available
    Text: 35E D m ÔS3b3B0 QOlbSlT 1 « S I P Silicon Switching Diodes X~ BAS 79A. BAS 79b _ SIEMENS/ SPCL-, SEMICONDS _ • Switching applications • High breakdown voltage • Com m on cathode T yp e M arking O rde ring c o d e 12-tnm tape


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    PDF 12-tnm Q62702 OT-223 BAS79B BAS79D T0311

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CMPNTSi OPTO 44E » S I E M E N S • ôS3b32b G O G M ^ D S « S I E X * r - 4 i- « 3 4 N 2 5 /4 N 2 6 4 N 2 7 /4 N 2 8 PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in inches mm AN 00 E LO) I ISS Hi m♦ ft ft fl (+) (T » ]mse 7 ] COLLECTOR


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    PDF S3b32b 823h35b 4N25/4N26

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Single-chip 8-bit microcontroller 80C552/83C552 Single-chip 8-bit microcontroller with 10-bit A/D, capture/compare timer, high-speed outputs, PWM FEATURES • 80C51 central processing unit • l2C*bus serial I/O port with byte oriented


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    PDF 80C552/83C552 10-bit 80C51 80C51 16-bit 16MHz 8XC552) Single-ChiCB83C552-5H/xxx