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    1P NPN SWITCHING TRANSISTOR Search Results

    1P NPN SWITCHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    1P NPN SWITCHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DS199

    Abstract: No abstract text available
    Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage


    OCR Scan     		S0T23 FMMT2222 FMMT2222A FMMT2222R FMMT2222AR FMMT2222 FMMT2222A 140KHz DS199 PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT2222 FMMT2222A S 0 T 2 3 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 FM M T2222A FMMT2222R FMMT2222AR - IB 1P 2P 3P ABSOLUTE M A X IM U M RATINGS SYM BOL PARAMETER C ollector-B ase V oltage C o llecto r-E m itte r V oltag e E m itter-B ase V oltag e


    OCR Scan     		FMMT2222 FMMT2222A T2222A FMMT2222R FMMT2222AR FMMT2222 T2222 PDF

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PDF

    LMBT2222ATT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.


    Original     		LMBT2222ATT1G S-LMBT2222ATT1G SC-89 AEC-Q101 LMBT2222ATT3G S-LMBT2222ATT3G 463C-02. LMBT2222ATT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT MMDT2227 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair Epitaxial Planar Die Construction Ultra-Small Surface Mount Package One 2222A-Type NPN, One 2907A-Type PNP


    Original     		MMDT2227 222A-Type 907A-Type OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA PDF

    1P NPN

    Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC PDF

    TRANSISTOR 1P

    Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.


    Original     		LMBT2222ATT1G SC-89 SC-89 LMBT2222ATT3G 463C-01 463C-02. TRANSISTOR 1P TRANSISTOR code marking 1P 3 marking code 1P 1P surface mount transistor PDF

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MMDT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data


    Original     		MMDT4401 OT-363 OT-363, MIL-STD-202, 150mA, 500mA, 100MHz PDF

    TRANSISTOR 1P

    Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 100MHz 150mA TRANSISTOR 1P Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)


    Original     		WBFBP-03A MMBT2222AE WBFBP-03A MMBT2907AE) 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 500mA 150mA 100MHz 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 500mA 100MHz 150mA PDF

    MMBT2222AT

    Abstract: No abstract text available
    Text: MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907FW Ideal for Medium Power Amplification and Switching


    Original     		MMBT2222AT OT-523 MMBT2907FW) 50BSC 17-Aug-2011 MMBT2222AT PDF

    Maxim sot-363

    Abstract: No abstract text available
    Text: MMDT3904 VISHAY DUAL NPN S M A LL SIGNAL S U R F A C E MOUNT TRANSISTOR I/UTEMir p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 Fl R KXX Mechanical Data_


    OCR Scan     		MMDT3904 OT-363 OT-363, MIL-STD-202, 100MHz 3001ns, DS30088 Maxim sot-363 PDF

    marking WMP

    Abstract: 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P MMDT4401
    Text: PRELIMINARY MMDT4401 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR /l i t e w j i I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 -HaH- R N E,


    OCR Scan     		MMDT4401 OT-363, MIL-STD-202, OT-363 MMDT4401 100MHz 150mA, 300ns, DS30111 marking WMP 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P PDF

    K6N sot363 marking

    Abstract: 1P NPN MMDT3904 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527
    Text: PRELIM INARY MMDT3904 VISHAY DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 R Ei R k Mechanical Data_


    OCR Scan     		MMDT3904 OT-363, MIL-STD-202, OT-363 MMDT3904 100MHz 100nA, 300tis, DS30088 K6N sot363 marking 1P NPN 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527 PDF

    SILICON GENERAL

    Abstract: Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor
    Text: MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE    Complementary PNP Type Available MMBT2907AW Epitaxial Planar Die Construction


    Original     		MMBT2222AW OT-323 MMBT2907AW) 150mA, 150mA 20-Oct-2009 SILICON GENERAL Transistor MARKING 1P 1P NPN TRANSISTOR code marking 1P 3 1p transistor sot323 MMBT2222AW MMBT2907AW TRANSISTOR MARKING CODE 1P mmbt2907* transistor marking 1p transistor PDF

    transistor 1p

    Abstract: MMBT2222AL MMBT2222AL-AE3-R MMBT2222A MMBT2222A-AE3-R MMBT2222A-AN3-R MMBT2222A-G 1p npn switching transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER „ FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: MMBT2222AL Halogen-free: MMBT2222AG


    Original     		MMBT2222A 500mA. MMBT2222AL MMBT2222AG MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222AG-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222AG-AN3-R transistor 1p MMBT2222AL MMBT2222A MMBT2222A-G 1p npn switching transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A PINNING FEATURES • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear amplification.


    OCR Scan     		PMBT2222; PMBT2222A PMBT2907 PMBT2907A. PMBT2222 MAM255 PDF

    DUAL NPN K1P

    Abstract: marking 1P sot363
    Text: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data


    Original     		MMDT2222A MMDT2907A) OT-363 OT-363, MIL-STD-202, 100MHz 150mA, DS30125 DUAL NPN K1P marking 1P sot363 PDF

    LMBT2222AWT1G

    Abstract: marking 1p npn transistor 1P F
    Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount


    Original     		LMBT2222AWT1G 323/SC LMBT2222AWT1G marking 1p npn transistor 1P F PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MMST2907A VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / p o w e fs e h co n w jcto r Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST2222A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW Mechanical Data_


    OCR Scan     		MMST2907A MMST2222A) OT-323 OT-323, MIL-STD-202, -150mA, -15mA -500mA, -50mA 150mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MMST4403 VISHAY PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I/UTEMir / powefsehconwjctor Features Epitaxial Planar Die Construction Complementary NPN Type Available MMST4401) Ultra-Small Surface Mount Package SOT-323 -*l ¡h -' TOR VIEW Mechanical Data_


    OCR Scan     		MMST4403 MMST4401) OT-323 OT-323, MIL-STD-202, -20mA, 100MHz -150mA, -15mA PDF