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    Nexperia BUK9K5R1-30EX

    MOSFETs BUK9K5R1-30E/SOT1205/LFPAK56D
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    TTI BUK9K5R1-30EX Reel 1,500
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    1NS31 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS' SflE awboa D QOQtjta?! y m MILITARY APPROVED 7C//'"u l 1N5283 thru 1N5314 and JAN/JTX/JTXV Current Regulator Field Effect Diodes GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N5291 -1N5314) • Available as JAN, JANiX, JANTX-V DO-7 Package


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    PDF 1N5283 1N5314 1N5283-1N5290) 1N5291 -1N5314) POV40

    1N8284

    Abstract: 1N930B 1N8313 1N8311 1N526B 1n9303
    Text: MILITARY APPROVED 1N5283 thru Current Regulator Reid Effect Diodes 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • Available a s JAN, JANfX, JAN-TX-v thru M ax • Current Constant Over Wide Voltage Range • High Source Impedance


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    PDF 1N5283 1N5314 1N5283-1N5290) 1N529 -1N5314) 1N8284 1N930B 1N8313 1N8311 1N526B 1n9303

    IN23C

    Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
    Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low


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    PDF DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

    CIL 108

    Abstract: ic tl 0741 1N830 cil-500 1N526B 1N8313 1n9303
    Text: MILITARY APPROVED Current Regulator Reid Effect Diodes 1N5283 thru 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • A v a ila b le a s J A N , JANfX, JA N -T X -v thru M a x Components* (UB Package) • Current Constant Over Wide Voltage Range


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    PDF 1N5283 1N5314 1N5283-1N5290) 1N529 -1N5314) 100UI CIL 108 ic tl 0741 1N830 cil-500 1N526B 1N8313 1n9303

    1N5315

    Abstract: LT 5203 1n5203 03J5 1H52
    Text: . Phone: 631-981-6140 Fax : (631-585-4858) Current Regulator Field Effect Diodes 1N 5203 thru JfiS 314 G EO M ETRY «65 • C u r r e n t C o n s la r it O v e r W id # V o t t a g t R a n g e 00-rJ’ Kfcva* * H ig h S a u r e * Im p e d a n c e * C o n n e c t in P a ra lle l fo r H ig h e r C u r r e n t


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    PDF 00-rJ' 1N5292 1N5233 1N5245 1N5247 1N5300 1N5305 N53Q6 1N5307 1N5306 1N5315 LT 5203 1n5203 03J5 1H52

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


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    PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17