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    1N8035-GA SPICE

    Abstract: No abstract text available
    Text: 1N8035-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8035-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8035-GA 1N8035-GA 05-SEP-2013 1N8035 46E-17 00E-05 26E-09 1N8035-GA SPICE

    Untitled

    Abstract: No abstract text available
    Text: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8035-GA Mil-PRF-19500 1N8035 46E-17 00E-05 26E-09 00E-10

    Untitled

    Abstract: No abstract text available
    Text: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8035-GA Mil-PRF-19500 1N8035 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8035-GA Mil-PRF-19500 1N8035 46E-17 00E-05 26E-09 00E-10