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    1N8032-GA SPICE

    Abstract: No abstract text available
    Text: 1N8032-GA SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the 1N8032-GA device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		1N8032-GA 1N8032-GA 05-SEP-2013 1N8032 99E-17 87E-05 38E-10 1N8032-GA SPICE PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8032-GA Mil-PRF-19500 1N8032 99E-17 87E-05 38E-10 00E-10 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8032-GA Mil-PRF-19500 1N8032 99E-17 87E-05 38E-10 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8032-GA Mil-PRF-19500 1N8032 99E-17 87E-05 38E-10 00E-10 PDF