1N6817 Search Results

1N6817 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
1N6817		Microsemi	LOW REVERSE LEAKAGE SCHOTTKY DIODE		Original	PDF
1N6817R		Microsemi	LOW REVERSE LEAKAGE SCHOTTKY DIODE		Original	PDF

1N6817 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MSASC25W100KV Abstract: MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11 Text: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability	Original	PDF	1N6817 MSASC25W100K) 1N6817R 1N6817) 1N6817R) MSASC25W100KV) MSASC25W100KS) MSASC25W100KR) oth17R MSASC25W100KV MSASC25W100K MSASC25W100KS 1N6817 1N6817R MSASC25W100KR PS11
1N6817 Abstract: 1N6817R MSASC25W100K MSASC25W100KR Text: 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R PRELIMINARY Features • • • • • • Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability	Original	PDF	1N6817 MSASC25W100K) 1N6817R 1N6817) 1N6817R) MSASC25W100KR) VolSASC25W100KR) MSC1034A IR125 1N6817 1N6817R MSASC25W100K MSASC25W100KR
msc diode Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW Text: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to	Original	PDF	1998/Winter 1N6815, 1N6817, 1N6818, 1N6820, 1N6821, 1N6823, MSAQX15G60K MSAQX25G60G MSAQX35G60L msc diode 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
1NS819 Abstract: J 6820 1N5B18 1n6817 SR1635C SR360 Text: SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE TO 5 0 AMPERES 2 0 VOLTS TO 6 0 VOLTS ’' N T — \ 1o Al (V 40 35 30 1.0 IN 17 1N18 - 1N19 - - - R-1 1.0 1S20 1S30 - 1S40 - 1S50 1S60 R-1 SR150 SR160 00-41 1.0 1N6817 1N5B18 1NS819 1.0 SR I 20 SR130 SRI 40 45 50 20	OCR Scan	PDF	1N6817 SR320 SRS20 SR820 SR1620C SR3020C SR5020C 1N5B18 SR130 1N5821 1NS819 J 6820 SR1635C SR360
Untitled Abstract: No abstract text available Text: • Microsemi m m Santa Ana, CA m 1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Powered b y Technology (MSASC25W100K) Features <ide p a s d v M e d structure fa r v«ry low le akage currents mrd ring protection to r in c re ^ \|e d reverse- energy c a p a b it y i	OCR Scan	PDF	1N6817 MSASC25W100K) 1N6817) 1N6817R) MSC1034A
KL SN 102 94v-0 Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9 Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results	OCR Scan	PDF
1N5822 ss24 Abstract: 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2 Text: SCHOTTKY RECTIFIERS PART NUMBERING SYSTEM Part numbering system for all parts excluding JEDEC registered and industry standard parts. 1. SURFACE-MOUNT 2. AXIAL AGL41 -Y Y a SMX SSXY - ZZZZ 3. POWER PACKAGES cont'd) A A A B X X Y Y P P - ZZZZ XX=Forward Current (in Amps)	OCR Scan	PDF	AGL41 O-263 MBR2060CT MBR2545CT MBR2550CT MBR2560CT SBL2030PT SBL2040PT O-247AD SBL3030PT 1N5822 ss24 1N5819 SS14 1N5822 SS34 melf 6060V 1n6817 MBR2