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    1N626 Price and Stock

    Diodes Incorporated 1N6263W-7-F

    DIODE SCHOTTKY 60V 15MA SOD123
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    DigiKey 1N6263W-7-F Reel 45,000 3,000
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    1N6263W-7-F Cut Tape 4,636 1
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    Avnet Americas 1N6263W-7-F Reel 51,000 8 Weeks 3,000
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    1N6263W-7-F Reel 8 Weeks 3,000
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    Mouser Electronics 1N6263W-7-F 11,998
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    Arrow Electronics 1N6263W-7-F Cut Strips 171 8 Weeks 786
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    Newark 1N6263W-7-F Cut Tape 8,530 5
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    TME 1N6263W-7-F 1
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    Avnet Asia 1N6263W-7-F 8 Weeks 6,000
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    Avnet Silica 1N6263W-7-F 3,000 10 Weeks 3,000
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    New Advantage Corporation 1N6263W-7-F 6,000 1
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    STMicroelectronics 1N6263

    DIODE SCHOTTKY 60V 15MA DO35
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    DigiKey 1N6263 Reel 8,000 4,000
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    1N6263 Cut Tape 6,516 1
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    Avnet Americas 1N6263 Reel 32,000
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    1N6263 Reel 25 Weeks 32,000
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    Mouser Electronics 1N6263 42,214
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    Verical 1N6263 8,000 4,000
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    Arrow Electronics 1N6263 8,000 25 Weeks 4,000
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    Newark 1N6263 Bulk 19,925 5
    • 1 $0.255
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    1N6263 Reel 4,000
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    1N6263 Ammo Pack 4,000
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    STMicroelectronics 1N6263 42,214 1
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    Bristol Electronics 1N6263 157,741 9
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    1N6263 6,500 45
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    1N6263 2,710 45
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    1N6263 2,023
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    Jameco Electronics 1N6263 Each 7,060 1
    • 1 $0.25
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    Quest Components 1N6263 69,981
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    TME 1N6263 3,896 1
    • 1 $0.179
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    Ameya Holding Limited 1N6263 30,592
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    ComSIT USA 1N6263 4,000
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    Chip 1 Exchange 1N6263 17,840
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    Avnet Silica 1N6263 128,000 17 Weeks 4,000
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    Chip1Stop 1N6263 11,105
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    Component Electronics, Inc 1N6263 9,650
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    EBV Elektronik 1N6263 26 Weeks 4,000
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    Rochester Electronics LLC 1N6267ARL4

    TVS DIODE 5.8VWM 10.5VC AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N6267ARL4 Bulk 5,080 1,567
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    Vishay Semiconductors 1N6267A-E3/54

    TVS DIODE 5.8VWM 10.5VC 1.5KE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N6267A-E3/54 Reel 4,200 1,400
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    1N6267A-E3/54 Cut Tape 1,335 1
    • 1 $0.72
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    Rochester Electronics LLC 1N6268ARL4G

    TVS DIODE 6.4VWM 11.3VC AXIAL
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    DigiKey 1N6268ARL4G Bulk 3,500 1,567
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    Find more 1N626 price and stock on Findchips.com

    1N626 Datasheets (290)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N626 Central Semiconductor Silicon Switching Diode Original PDF
    1N626 BKC International 35 V, 500 mW general purpose diode Scan PDF
    1N626 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N626 General Electric Semiconductor Data Book 1971 Scan PDF
    1N626 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N626 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N626 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N626 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N626 Unknown Shortform Electronic Component Datasheets Short Form PDF
    1N626 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N626 Unknown GE Transistor Specifications Scan PDF
    1N626 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N626 National Semiconductor High Voltage Diodes Scan PDF
    1N626 Semitronics Silicon Diodes Scan PDF
    1N6262 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N6262 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N6263 Diodes Short Form Selection Guide Original PDF
    1N6263 Diodes SCHOTTKY BARRIER SWITCHING DIODE Original PDF
    1N6263 Diodes Schottky Barrier Switching Diode Original PDF
    1N6263 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    ...

    1N626 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking sb

    Abstract: 1N6263W marking SB
    Text: Diodes SMD Type SMALL SIGNAL DIODES 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02


    Original     		PDF 1N6263W OD-123 smd marking sb 1N6263W marking SB

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02 Low Reverse Capacitance


    Original     		PDF 1N6263W OD-123

    1N6277

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N6267-1N6303A UNIDIRECTIONAL AND BIDRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS FEATURES • • • • • • Available in both Unidirectional and Bidirectional add C or CA suffix for bidirectional Voltages from 6.8 to 180 V Breakdown (VBR)


    Original     		PDF 1N6267-1N6303A MIL-PRF-19500, 1N6277

    Untitled

    Abstract: No abstract text available
    Text: 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE440CA Transient Voltage Suppressor Breakdown Voltage 6.8 to 440 Volts Peak Pulse Power 1500 Watts Features   CASE: DO-201AD DO-27      Breakdown Voltages (VBR) from 6.8 to 440V 1500W peak pulse power capability with a 10/1000 s


    Original     		PDF 1N6267 1N6303A 5KE440CA DO-201AD DO-27) 1N303A,

    1N6264

    Abstract: No abstract text available
    Text: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM


    Original     		PDF 1N6264 1N6264 DS300276

    1N6268CAL

    Abstract: 1N6276CA 1N6267CAL 1N6267CL 1N6268CL 1N6269CL 1N6303CAL 1N6284CL
    Text: 1N6267CL - 1N6303CAL BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 200 Volts PPK : 1500 Watts DO-201AD FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to V BR min.


    Original     		PDF 1N6267CL 1N6303CAL DO-201AD DO-201AD UL94V-O MIL-STD-202, 10X1000 1N6268CAL 1N6276CA 1N6267CAL 1N6268CL 1N6269CL 1N6303CAL 1N6284CL

    1n5711 diode

    Abstract: No abstract text available
    Text: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of


    Original     		PDF 1N5711 1N6263 LL5711 LL6263. 1N5711 1-Jan-2006 1n5711 diode

    1N6267

    Abstract: 1N6303 5KE440CA JESD22-B102D J-STD-002B
    Text: 1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF 5KE540A, 1N6267 1N6303 2002/95/EC 2002/96/EC 08-Apr-05 1N6303 5KE440CA JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1N6263 1N5711 Features • • • • 400 mWatt Small Signal Schottky Diode 60 to 70 Volts High Reverse Breakdown Voltage


    Original     		PDF 1N6263 1N5711 DO-35 1N5711 400mW

    Transient voltage suppressors

    Abstract: DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A
    Text: 1.5KE6.8 thru 1.5KE440CA and 1N6267 thru 1N6303A Transient Voltage Suppressors Peak Pulse Power 1500W Breakdown Voltage 6.8 to 440V Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Glass passivated junction ‹ 1500W peak pulse power capabililty on 10/1000us waveform,


    Original     		PDF 5KE440CA 1N6267 1N6303A 10/1000us 265oC/10 MIL-STD-750, Transient voltage suppressors DIODE 1n6294a diode 1n6285A 1N6275 1,5ke15 diode 1n6278A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1N6263W SCHOTTKY DIODE SOD-123 Features 1.05 • · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance


    Original     		PDF OD-123 1N6263W OD-123 1N6263W 3000ms. 020REF 500REF

    BAT49

    Abstract: BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35
    Text: POWER RECTIFIERS SIGNAL SCHOTTKY DIODES DO35 Voltage max Current DO41 Part Number 20 Volts 350 mAmps BAT47 30 Volts 200 mAmps BAT42 BAT43 TMMBAT42 TMMBAT43 40 Volts 350 mAmps BAT48 TMMBAT48 1000 mAmps BYV10-40 TMBYV10-40 60 Volts 15mAmps 1N6263 TMM6263 1000 mAmps


    Original     		PDF BAT47 BAT42 BAT43 TMMBAT42 TMMBAT43 BAT48 TMMBAT48 BYV10-40 TMBYV10-40 15mAmps BAT49 BYV1060 BYV10-60 TMMBAT43 bat41 bat43 BAS70 MELF BAT43 BAT47 BYV10-40 DO35

    Untitled

    Abstract: No abstract text available
    Text: 1N6267A Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* http://onsemi.com Mosorb devices are designed to protect voltage sensitive components from high voltage, high−energy transients. They have excellent clamping capability, high surge capability, low zener


    Original     		PDF 1N6267A 5KE250A, 5KE18CA. 1N6303A

    1N63

    Abstract: 1.5KE15C
    Text: 1.5KE6.8 Series and 1N6267 thru 1N6303A Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d * e d n nge e t x E e RaFeatures g a t l Vo • Underwriters Laboratory Recognition under UL standard


    Original     		PDF 1N6267 1N6303A 18-Jul-02 1N63 1.5KE15C

    15KEXX

    Abstract: No abstract text available
    Text: 1N6267A Series 1500 Watt Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have excellent clamping capability, high surge capability, low zener


    Original     		PDF 1N6267A 15KEXX

    Untitled

    Abstract: No abstract text available
    Text: I n ter n a tio n a l 1N6263 S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER DIODES 1 :o FEATURES H erm etically Sealed M e ta lu rg ic a lly Bonded D ouble Plug C onstruction .0 6 8 /.0 7 3 1 .7 3 /1 .9 3 1.00 2 5 .4 M in MAXIMUM RATINGS O p e ra tin g T em p e ra tu re :


    OCR Scan     		PDF 1N6263

    Untitled

    Abstract: No abstract text available
    Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255


    OCR Scan     		PDF 1N6264 1N6264 940nm ST1332 74bbasi 000b3 ST1002 ST1007 ST1003 ST1006

    ST10M

    Abstract: No abstract text available
    Text: E O 8 GaAs INFRARED EMITTING DIODE P?ßfLiCTBSiiCS 1N6264 The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. ST1332 • Good optical to mechanical alignment SYMBOL A j»b «D &C, e «. rt i k L » INCHES MAX. MIN 255 ,01S .021 .230 ,iac .<86 .100 NOM.


    OCR Scan     		PDF 1N6264 1N6264 940nm ST1332 ST16Q4 ST1007 ST1006 ST10M ST1004 ST10M

    Untitled

    Abstract: No abstract text available
    Text: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021


    OCR Scan     		PDF 1N6266 1N6266 940nm ST19W 25mW/cjn2. L14G1 L14G2

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Breakdow n Voltage JEDEC TY PE NUM BER 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N6272 1N6272A 1N6273 1N6273A 1N6274 1N6274A 1N6275 1N6275A 1N6276 1N6276A 1N6277


    OCR Scan     		PDF 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A

    Untitled

    Abstract: No abstract text available
    Text: 1N5711 AND 1N6263 Schottky Diodes FEATURES DO-35 ♦ For general purpose applications. ♦ Metal-on-silicon Schottky barrier X device which is protected by a PN X. junction guard ring. The low forward M voltage drop and fast switching make it , ideal for protection of MOS devices, steering,


    OCR Scan     		PDF 1N5711 1N6263 DO-35 LL5711 LL6263. DO-35 3ARD137 3ATQ137

    1N6263

    Abstract: Scans-00155669
    Text: B K C INTERNATIONAL 30E D • 117t1eîÔ3 0000356 b ■ ' T * 0 3 - O ci 1N6263 Silicon Schottky Barrier Diodes for general purpose applications Special Features: Low Forward Voltage Subnanosecond Switching Glass Hermetic Package Description The 1N6263 is a metal on silicon Schottky barrier device


    OCR Scan     		PDF 000G3SÃ 1N6263 1N6263 DO-35 101bs. Scans-00155669

    1N6263

    Abstract: No abstract text available
    Text: visHAY 1N6263 SCHOTTKY BARRIER SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance I Mechanical Data_ •


    OCR Scan     		PDF 1N6263 DO-35, MIL-STD-202, DO-35 1N6263 DS11010

    in6284

    Abstract: 1N6234 SKE350 1N623 SKE350A IN6280 IN6280A IN6269A I.5KE IN6278A
    Text: ,/ Microsemi Corp. f The ötoae experts SANTA ANA, CA / / SCOTTSDALE, AZ For m ore inform ation call: 602 1N6267 thru 1N6303A and 1.5KE6.8 thru 1.5KE400A 941-6300 TRANSIENT ABSORPTION ZENER FEATURES UNIDIRECTIONAL AND BIDIRECTIONAL • ECONOMICAL • 1500 WATTS PEAK PULSE POWER DISSIPATION


    OCR Scan     		PDF 1N6267 1N6303A 5KE400A in6284 1N6234 SKE350 1N623 SKE350A IN6280 IN6280A IN6269A I.5KE IN6278A