1N6101 JAN Search Results

1N6101 JAN Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
JM38510/11302BEA		Analog Devices	DAC08AQ7/38510 JAN 8-BI
JM38510/11301BEA		Analog Devices	DAC08Q7/38510 JAN 8-BI IC

1N6101 JAN Price and Stock

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Microchip Technology Inc JANTX1N6101 ESD Protection Diodes / TVS Diodes Arrays
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Mouser Electronics	JANTX1N6101					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Compensated Devices Inc 1N6101JANTX
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Quest Components	1N6101JANTX		337			1 $335.8196 10 $307.035 100 $287.8454 1000 $287.8454 10000 $287.8454	Buy Now
Microsemi Corporation 1N6101JANTXV
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Quest Components	1N6101JANTXV		4			1 $176.635 10 $158.9715 100 $158.9715 1000 $158.9715 10000 $158.9715	Buy Now
	1N6101JANTXV		4			1 $176.635 10 $158.9715 100 $158.9715 1000 $158.9715 10000 $158.9715	Buy Now
Linfinity Microelectronics 1N6101JANTX
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Quest Components	1N6101JANTX		1			1 $335.8196 10 $335.8196 100 $335.8196 1000 $335.8196 10000 $335.8196	Buy Now
National Semiconductor Corporation 1N6101JANTX Diode
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ComSIT USA	1N6101JANTX		81			1 - 10 - 100 - 1000 - 10000 -	Get Quote

1N6101 JAN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 1N6101+JANTXV Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package8 Diodes Per Circuit1 I(F) Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage65 t(rr) Max.(s) Rev. Rec. Time5.0n @I(F) (A) (Test Condition)10m	Original	PDF	1N6101 Current100m Voltage65 Current25n StyleTO-116
MSC1006 Abstract: 1N6101 Text: 1N6101 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA	Original	PDF	1N6101 MIL-PRF-19500/474 100nA 100mAdc 10mAdc, 300us MSC1006 1N6101
1N6101 Abstract: 1N6101 JAN Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions	Original	PDF	MIL-PRF-19500/474 1N6101 16-PIN T4-LDS-0083 1N6101 1N6101 JAN
1N6101 Abstract: No abstract text available Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 16-PIN Ceramic DIP WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes	Original	PDF	1N6101 16-PIN 1N6101
1N6510 Abstract: 1N6101 1N6510 JANTX Text: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)	Original	PDF	1N6101 1N6510 -PRF-19500/474 1N6101 1N6510 1N6510 JANTX
1N6101 Abstract: 1N6101 JAN Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes	Original	PDF	1N6101 16-PIN 1N6101 1N6101 JAN
1N6496 Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100 Text: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,	Original	PDF	MIL-PRF-19500/474G MIL-PRF-19500/474F 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N6496 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
1N5770 Abstract: No abstract text available Text: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,	Original	PDF	MIL-PRF-19500/474F MIL-PRF-19500/474E 1N5768, 1N5770, 1N5772, 1N5774, 1N6100, 1N6101, 1N6496, 1N6506, 1N5770
1N6510 JAN Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511 Text: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has	Original	PDF	SG6100/SG6511 SG6101/SG6510 SG6100/SG6511 SG6101/SG6510 1N6100) 14-PIN SG6101J 1N6101) 1N6510 JAN 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
1N6100 Abstract: 1N6101 Text: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 14-PIN Ceramic Flat Pack WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering	Original	PDF	1N6100 14-PIN 1N6100 1N6101
Untitled Abstract: No abstract text available Text: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 14-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering	Original	PDF	1N6100 14-PIN
FDC9268 Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):	Original	PDF
diode sg 8c Abstract: SG6510D SG6101J 114-PIN 1N6101 JAN sg 88 diode sg6101 6510 1n6511 Text: LIN Doc #; 6100 S G 6 1 0 0 /6 5 1 1 , S G 6 1 0 1 /6 5 1 0 T he I n f i n i t e P o w e r o f ,N M \ I ( D iode I n n o v a t i o n A rray P r o d u c t i o n D ata DESCRIPTION T he SG 6100/SG6511 a n d SG 6101/ SG6510 d io d e arrays are m o n o lith ic,	OCR Scan	PDF	6100/SG6511 SG6510 6100/S 6101/SG SG6511J SG6510 1N6510) 6101J 14-pin 1N6511) diode sg 8c SG6510D SG6101J 114-PIN 1N6101 JAN sg 88 diode sg6101 6510 1n6511
SG6101J Abstract: sg6101 Text: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has	OCR Scan	PDF	SG6100/SG6511 SG6101/SG6510 16-PIN SG6101J 1N6101) 14-PIN SG6101J sg6101