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    Omega Engineering PX91N5-45KSI

    Pressure Trans. 0-45000Psis |Omega PX91N5-45KSI
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    Newark PX91N5-45KSI Bulk 1
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    Omega Engineering PX91N5-45KS5T

    Pressure Trans 0-45000Psis |Omega PX91N5-45KS5T
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    Newark PX91N5-45KS5T Bulk 1
    • 1 $1415.56
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    Motorola Semiconductor Products 1N5453A

    UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA
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    Quest Components 1N5453A 20
    • 1 $1.5
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    Motorola Semiconductor Products 1N5454C

    VARIABLE CAPACITANCE DIODE, 68PF C(T)
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    Quest Components 1N5454C 12
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    1N545 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5450 Knox Semiconductor Varactor Diode, Tuner, Single, 30V, DO-7, 2-Pin Original PDF
    1N5450 Knox Semiconductor GENERAL PURPOSE ABRUPT VARACTOR DIODES Original PDF
    1N5450 Codi Semiconductor JEDEC Registered Voltage Variable Capacitor, DO-7 Scan PDF
    1N5450 Codi Semiconductor Voltage-Variable Capacitance (Tuning) Diodes Scan PDF
    1N5450 Crystalonics Voltage Variable Capacitance Diodes Data Book 1976 Scan PDF
    1N5450 International Semiconductor VARACTOR TUNING DIODE Scan PDF
    1N5450 Loral JEDEC Tuning Varactors, DO-7 Glass Package Scan PDF
    1N5450 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5450 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N5450 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5450 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5450 Semico Varactor Diodes Scan PDF
    1N5450 Teledyne Components High Q Silicon Varactron Voltage Variable Capacitance Diodes Scan PDF
    1N5450A Knox Semiconductor GENERAL PURPOSE ABRUPT VARACTOR DIODE Original PDF
    1N5450A Codi Semiconductor Voltage-Variable Capacitance (Tuning) Diodes Scan PDF
    1N5450A Codi Semiconductor JEDEC Registered Voltage Variable Capacitor, DO-7 Scan PDF
    1N5450A International Semiconductor High Q - Voltage Variable Capacitors Scan PDF
    1N5450A Loral JEDEC Tuning Varactors, DO-7 Glass Package Scan PDF
    1N5450A Motorola The European Selection Data Book 1976 Scan PDF
    1N5450A Motorola European Master Selection Guide 1986 Scan PDF
    ...

    1N545 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5456A

    Abstract: motorola 986 1N5446ARL 1N5448ARL
    Text: MOTOROLA Order this document by 1N5446ARL/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges,


    Original     		PDF 1N5446ARL/D 1N5446ARL 1N5448ARL 1N5456A 204AA) 1N5456A motorola 986 1N5446ARL 1N5448ARL

    transistor equivalent 2n5551

    Abstract: bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes 1N5446ARL 1N5448ARL 1N5456A These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation applications in AM through UHF ranges, providing solid–state reliability to replace mechanical tuning methods.


    Original     		PDF 1N5446ARL 1N5448ARL 1N5456A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor equivalent 2n5551 bf245 equivalent EQUIVALENT TRANSISTOR bc109c transistor equivalent CT 2n5551 BC237 bc238 equivalent tr bc547 BF422 EQUIVALENT Motorola FETS 3000 series part numbers MPS2369 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 1N5456CCHIP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p‘ C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor MaterialSilicon Package StyleChip


    Original     		PDF 1N5456CCHIP Voltage30

    IN5456A

    Abstract: IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448
    Text: — MOTORO~ SEMICONDUCTOR o TECHNICAL Silicon -ning Order this document by 1N5446ARUD DATA Diodes 1N5446ARL 1N5448ARL 1N5456A,., These are epitmial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation


    Original     		PDF 1N5446ARUD 1N5446ARL 1N5448ARL 1N5456A DO-204AA) N1-2447 IN5456A IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448

    Untitled

    Abstract: No abstract text available
    Text: 1N5456C12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		PDF 1N5456C12 Voltage30

    Untitled

    Abstract: No abstract text available
    Text: 1N5456C06 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		PDF 1N5456C06 Voltage30

    Untitled

    Abstract: No abstract text available
    Text: 1N5453C12 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.56p C1/C2 Min. Capacitance Ratio2.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.200 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		PDF 1N5453C12 Voltage30

    Untitled

    Abstract: No abstract text available
    Text: 1N5456C18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		PDF 1N5456C18 Voltage30

    varactor diode 1N5469

    Abstract: 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449
    Text: GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 PART NUMBER CAPACITANCE @ 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451


    Original     		PDF 1N5441 1N5476 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 varactor diode 1N5469 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449

    Untitled

    Abstract: No abstract text available
    Text: 1N5456C Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.100p‘ C1/C2 Min. Capacitance Ratio2.7 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.175 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)400m Semiconductor MaterialSilicon Package StyleDO-7


    Original     		PDF 1N5456C Voltage30

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    1N5462

    Abstract: varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5441 1N5442 1N5443 1N5444 1N5445
    Text: KNOX SEMICONDUCTOR, INC. GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER CAPACITANCE @ - 4 Vdc • 1 MHz pF 6.8 8.2 10.0 12.0 15.0 18.0 20.0 22.0 27.0 33.0 39.0 47.0 56.0 68.0 82.0 100.0 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447


    Original     		PDF 1N5441 1N5476 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5462 varactor diode 1N5469 1N5449 1N5448 1N5441 to 1N5476 datasheet 1N5442 1N5443 1N5444 1N5445

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N5458 VOLTAGE VARIABLE CAPACITORS thru V E R Y HIGH Q, LOW VOLTAGE, LOW L EA K A G E 3.9 TO 100 PF 1N5476C ELECTRICAL CHARACTERISTICS f CHARACTERISTICS - ALL TYPES T„ = 25 °C unless otherwise specified


    OCR Scan     		PDF 1N5458 1N5476C TQQ037Ã 0GD0b33

    1n5448b

    Abstract: 1N5439B
    Text: I n ter n a tio n a l S e m ic o n d u c t o r I n c . 1N5439 thru VOLTAGE VARIABLE CAPACITORS 1N5457C HIGH Q, LOW VOLTAGE, GENERAL PURPOSE 3.9 TO 100 PF ELECTRICAL CHARACTERISTICS /" CHARACTERISTICS - T, = 25 °c unless o th e rw is e sp ecified \ TEST CONDITIONS


    OCR Scan     		PDF 1N5439 1N5457C 1N5455B 1N5456B DD00b3B 1n5448b 1N5439B

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SEMICONDUCTOR INC. , 1N5439 thru VOLTAGE VARIABLE CAPACITORS 1N5456C HIGH Q, LOW VOLTAGE, GENERAL PURPOSE 3.9 TO 100 PF ELECTRICAL /• CHARACTERISTICS T* = 2 5 ftC u n le s s o th e r w is e s p e c ifie d CHARACTERISTICS TEST CONDITIONS ALL TYPES


    OCR Scan     		PDF 1N5439 1N5456C 5453B 5454B 5455B 5456B

    Untitled

    Abstract: No abstract text available
    Text: 1N54391N5476 1N5681 1N5710 Varactor Diodes 1N5439 to 1N5476 and 1N5681 to 1N5710 Type Number 1N5439 1N5440 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 A A A A A A A A A A A A A A A 1N5455 1N5456 1N5461


    OCR Scan     		PDF 1N5439- 1N5439 1N5476 1N5681 1N5710 1N5440 1N5441 1N5442 1N5443

    1N5449

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES 1N5441 TO 1N5476 TYPE NUMBER 1N5441 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449 1N5450 1N5451 1N5452 1N5453 1N5454 1N5455 1N5456 ♦ 1N5461 ♦ 1N5462 ♦ 1N5463 ♦ 1N5464


    OCR Scan     		PDF 1N5441 1N5476 1N5442 1N5443 1N5444 1N5445 1N5446 1N5447 1N5448 1N5449

    IN5456

    Abstract: KE-01 1N5456A 1N5456B 1N5456D 50MHZ N5456C KE01
    Text: i- * _ •* KNOX SEMICONDUCTOR INC _ • * * » * ' 34E D • COMME R C I A L TEST S P E C I F I C A T I O N ncrutr'cr t v d c . I N 5456 1N5456A 1N5456B 1NS456C 1N5456D 10 100 100 100 100 PF PF PF' PF PF ■ SE3AS3M ODDOlbS *4 M K Z I " p C T H ^ + 20%


    OCR Scan     		PDF KT-316 IN5456 1N5456A 1N5456B N5456C 1N5456D C2/C30 50MHZ KE-01 KE01

    1n54j

    Abstract: 1N5441 1N5461 1N5476 1n54j9 1N5440 1N5439 1N5442 1N5443 1N5444
    Text: "F ¿7-/9 4TE D ^ooaaTö 00000^3 ö ?t • 1N5439 iseh In tern atio n al i n t e r n a tional Semiconductor, In c - thru semicond 1N5456 1N5461 thru H IG H Q - VOLTAGE VARIABLE CAPACITORS 1N5476 MINIMUM QUALITY TUNING RATIO a t V r = 4 Vdc FACTOR 2 V to 3 0 V


    OCR Scan     		PDF 1N5439 1N5456 1N5461 1N5476 1N54J9 1N5440 1N5441 1N5442 1N5443 1N5444 1n54j 1N5461 1N5476

    Untitled

    Abstract: No abstract text available
    Text: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS


    OCR Scan     		PDF 000036b C2/C20 G702A SQ1214A G603A SQ1714 SQ1715 SQ1216A C20/pf

    MV2215

    Abstract: MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620
    Text: RF — SIGNAL PROCESSING DIODES continued General-Purpose Tuning Diodes (continued) MAXIMUM WORKING VOLTAGE s ^ ' 30 V O U S CASE 51 DO-204AA (DO-7) Ct Nominal Capacitance PF ±10% («' V r = 4.0 V f = 1.0 MHz - .Cap.''"'' Ratio 4 -2 5 V Mtn Cap . . Ratso


    OCR Scan     		PDF DO-204AA 1N5441A MV1620 1N5442A MV1622 1N5443A MV1624 1N5444A MV1626 1N5445A MV2215 MV2112 MV2201 mv838 MV2213 mv2114 1N5441A 1N5443A 1N5444A MV1620

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211