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    1N5402 ON SEMICONDUCTOR Search Results

    1N5402 ON SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
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    1N5402 ON SEMICONDUCTOR Price and Stock

    Taiwan Semiconductor 1N5402

    Diode 200V 3A 2-Pin DO-201AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5402 2,568
    • 1 $1.31
    • 10 $1.31
    • 100 $0.574
    • 1000 $0.274
    • 10000 $0.041
    		Buy Now

    Diotec Semiconductor AG 1N5402

    Diode - DO-201 - 200V - 3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5402 6,800
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0395
    		Buy Now

    1N5402 ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5402

    Abstract: 1N5402 ON SEMICONDUCTOR 1000C 1050C
    Text: 1N5402 Naina Semiconductor emiconductor Ltd. General Purpose Rectifier Rectifier, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF 1N5402 MIL-STD-202, DO-201AD 201AD DO-27) 1050C 1000C 1N5402 1N5402 ON SEMICONDUCTOR 1000C 1050C

    1N5404

    Abstract: 1N5401
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF 1N5400 1N5408 2002/95/EC 2002/96/EC DO-201AD DO-201AD, UL-94V-0 08-Apr-05 1N5404 1N5401

    1N5408

    Abstract: 1n5404 1N5401 1N5405 1N5400 1n5402 JESD22-B102 J-STD-002 1n5403 1N5406
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF 1N5400 1N5408 2002/95/EC 2002/96/EC DO-201AD DO-201AD, UL-94V-0 1N5408 1n5404 1N5401 1N5405 1n5402 JESD22-B102 J-STD-002 1n5403 1N5406

    1n5408

    Abstract: 1n5400 1n5402 1N54 1N5405 1n5406 1N5401 1N5404 1N5402 DIODES 1N5401 Vishay
    Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features Mechanical Data • • • • Case: DO-201AD, molded epoxy body


    Original     		PDF 1N5400 1N5408 DO-201AD DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 25-Aug-05 1n5408 1n5402 1N54 1N5405 1n5406 1N5401 1N5404 1N5402 DIODES 1N5401 Vishay

    1N5401 vishay

    Abstract: 1n5404 1N5405 1N5400 1N5401 1N5408 J-STD-002
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		PDF 1N5400 1N5408 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 11-Mar-11 1N5401 vishay 1n5404 1N5405 1N5401 1N5408 J-STD-002

    1N5408

    Abstract: 1N5402 1000C 1050C
    Text: 1N5408 Naina Semiconductor emiconductor Ltd. General Purpose Rectifier Rectifier, 3.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic


    Original     		PDF 1N5408 MIL-STD-202, DO-201AD 201AD DO-27) 1050C 1000C 1N5408 1N5402 1000C 1050C

    1N5404

    Abstract: No abstract text available
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 1N5400 1N5408 DO-201AD 2002/95/EC 2002/96/EC DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05 1N5404

    1N5404

    Abstract: 1n5404 diode data sheet 1n5404 diode 1N5408 Diode 1N5403 1N5400 1N5401 JESD22-B102D J-STD-002B
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 1N5400 1N5408 2002/95/EC 2002/96/EC DO-201AD DO-201AD, UL-94V-0 J-STD-002B JESD22-Bed 08-Apr-05 1N5404 1n5404 diode data sheet 1n5404 diode 1N5408 Diode 1N5403 1N5401 JESD22-B102D

    1N5408

    Abstract: diode 1N5408 specifications 1N5404 1N5400 1N5401 JESD22-B102D J-STD-002B
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC


    Original     		PDF 1N5400 1N5408 2002/95/EC 2002/96/EC DO-201AD 08-Apr-05 1N5408 diode 1N5408 specifications 1N5404 1N5401 JESD22-B102D J-STD-002B

    1N5404

    Abstract: 1N5400 1N5401 1N5408 JESD22-B102 J-STD-002 1N5401 Vishay
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


    Original     		PDF 1N5400 1N5408 2002/95/EC 2002/96/EC DO-201AD DO-201AD, UL-94V-0 18-Jul-08 1N5404 1N5401 1N5408 JESD22-B102 J-STD-002 1N5401 Vishay

    1N5404

    Abstract: 1N5406 1N5408 1N5400 1N5401 1N5402
    Text: 1N5400 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5408 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-201AD MECHANICAL DATA * * * * *


    Original     		PDF 1N5400 1N5408 DO-201AD MIL-STD-202E 300uS 1N5404 1N5406 1N5408 1N5400 1N5401 1N5402

    1n5408

    Abstract: 1N5404 1n5402 1N5406 1N5400 1N5401 1N5407
    Text: 1N5400 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5408 SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-201AD MECHANICAL DATA * * * * *


    Original     		PDF 1N5400 1N5408 DO-201AD MIL-STD-202E 1N5401 1N5402 1N5404 1N5406 1N5407 1n5408

    Untitled

    Abstract: No abstract text available
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features Mechanical Data • • • • Case: DO-201AD, molded epoxy body


    Original     		PDF 1N5400 1N5408 DO-201AD DO-201AD, UL-94V-0 J-STD-002B JESD22-B102D 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		PDF 1N5400 1N5408 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2002/95/EC.

    1N54

    Abstract: 1N5402 DIODES
    Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in


    Original     		PDF 1N5400 1N5408 22-B106 2002/95/EC 2002/96/EC DO-201AD AEC-Q101 DO-201AD, 2011/65/EU 2002/95/EC. 1N54 1N5402 DIODES

    1n540X

    Abstract: 1N5400
    Text: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial−Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:


    Original     		PDF 1N5400 1N5408 1N5404 1N5406 1n540X

    FE16B

    Abstract: MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402
    Text: Rectifier Cross Reference This Cross Reference lists Rectifiers by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional information, contact the nearest ON Semiconductor


    Original     		PDF r14525 CRD801/D FE16B MBR0540LT1 FE16D BYV19-45 MUR420 replacement BYV33-45 FE16A BYV43-45 1N5821 substitution replacement UF5402

    D1N5400

    Abstract: PK 1N5406 1N5400 1N5400RL 1N5401 1N5401RL 1N5402 1N5402RL 1N5404 1N5406
    Text: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial-Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:


    Original     		PDF 1N5400 1N5408 1N5404 1N5406 r14525 1N5400/D D1N5400 PK 1N5406 1N5400RL 1N5401 1N5401RL 1N5402 1N5402RL

    1N5400

    Abstract: No abstract text available
    Text: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial-Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:


    Original     		PDF 1N5400 1N5408 1N5404 1N5406 r14525 1N5400/D

    Untitled

    Abstract: No abstract text available
    Text: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial-Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:


    Original     		PDF 1N5400 1N5408 1N5404 1N5406 r14525 1N5400/D

    1N5404

    Abstract: 1n540X 1N5400
    Text: 1N5400 thru 1N5408 1N5404 and 1N5406 are Preferred Devices Axial−Lead Standard Recovery Rectifiers Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:


    Original     		PDF 1N5400 1N5408 1N5404 1N5406 1n540X

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N5400 THRU 1N5408   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • 3 Amp Rectifier 50 - 1000 Volts Low Current Leakage and Low Forward Voltage


    Original     		PDF 1N5400 1N5408 DO-201AD 1N5401 1N5402 1N5404 1N5405 1N5406 1N5407

    in5400 diode

    Abstract: IN5408 IN5408 diodes Current Rating of IN5408 diode 3E05 diode IN5408 IN5400 in5404 diode Current Rating of IN5402 diode in5408 diode
    Text: DIODES LIMITED IN5400 t o IN5408 FAIRACRES ESTATE. DEDWORTH ROAD. W INDSOR. BERKSHIRE. Telephone: W INDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS The 3E Series silicon rectifiers offer current ratings up to 3 Am­


    OCR Scan     		PDF IN5400 IN5408 MIL-S-19500 in5400 diode IN5408 IN5408 diodes Current Rating of IN5408 diode 3E05 diode IN5408 in5404 diode Current Rating of IN5402 diode in5408 diode