Untitled
Abstract: No abstract text available
Text: 1N5400-1N5408 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM
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1N5400-1N5408
1N5400
1N5408
DO-201AD
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1N5400-1N5408
Abstract: 1N5400 1N5408 1N5400-1N540
Text: 1N5400-1N5408 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM
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1N5400-1N5408
1N5400
1N5408
DO-201AD
1N5400-1N5408
1N5408
1N5400-1N540
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1N5400-1N5408
Abstract: T0030 CBVK741B019 1N5400 1N5408 F63TNR Fairchild taping 1N54001
Text: 1N5400-1N5408 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings* Symbol
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1N5400-1N5408
1N5400
1N5408
DO-201AD
1N5400-1N5408
T0030
CBVK741B019
1N5408
F63TNR
Fairchild taping
1N54001
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Untitled
Abstract: No abstract text available
Text: 1N5400 THRU 1N5408 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0547, Rev. - Green Products 1N5400 THRU 1N5408 GLASS PASSIVATED SILICON RECTIFIER Features: z z z z z z z z The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
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1N5400
1N5408
N0547,
1N5400
C/10s
DO-201AD
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1N5400-1N5408
Abstract: 1N5400 1N5408 1n54001n5408
Text: 1N5400-1N5408 1N5400 - 1N5408 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • High current capability. • Low leakage. DO-201AD COLOR BAND DENOTES CATHODE General Purpose Rectifiers Absolute Maximum Ratings* Symbol Parameter VRRM
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1N5400-1N5408
1N5400
1N5408
DO-201AD
1N5400-1N5408
1N5408
1n54001n5408
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CT 1N5406
Abstract: 1n5402 1N54001 1N5406 1N5401 DO-201AD 1N5401 diodes DS28007 1N5407
Text: SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current
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1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
DO-201AD
CT 1N5406
1N54001
1N5401 diodes
DS28007
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1N5406
Abstract: 1N5402 DO-201AD 1n5401 1n5407 DS28007 1N5400-B
Text: SPICE MODELS: 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current
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1N5400
1N5401
1N5402
1N5404
1N5406
1N5407
1N5408
DO-201AD
DS28007
1N5400-B
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1N5401
Abstract: 1N5404-T DO-201AD 1N5400-1N5408 1N5401-B 1N5402 CT 1N5406 1N5406 1N5407 1N5408 Diode 1N5408
Text: 1N5400 - 1N5408 3.0A RECTIFIER Features • · · · · Diffused Junction High Current Capability and Low Forward Voltage Drop B A Surge Overload Rating to 200A Peak A Low Reverse Leakage Current Lead Free Finish, RoHS Compliant Note 3 C Mechanical Data D
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1N5400
1N5408
DO-201AD
J-STD-020C
MIL-STD-202,
DS28007
1N5400-1N5408
1N5401
1N5404-T
DO-201AD
1N5400-1N5408
1N5401-B
1N5402
CT 1N5406
1N5406
1N5407
1N5408 Diode 1N5408
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1N5408
Abstract: diode 1N5408 specifications 1N5404 1N5400 1N5401 JESD22-B102D J-STD-002B
Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC
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1N5400
1N5408
2002/95/EC
2002/96/EC
DO-201AD
08-Apr-05
1N5408
diode 1N5408 specifications
1N5404
1N5401
JESD22-B102D
J-STD-002B
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1N5401 vishay
Abstract: 1n5404 1N5405 1N5400 1N5401 1N5408 J-STD-002
Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
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1N5400
1N5408
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
11-Mar-11
1N5401 vishay
1n5404
1N5405
1N5401
1N5408
J-STD-002
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Untitled
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
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1N5400
1N5408
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2002/95/EC.
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IN 5402 rectifier
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
MIL-STD-750,
DO-204AL
DO-41)
28-Apr-05
IN 5402 rectifier
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1N54
Abstract: 1N5402 DIODES
Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
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1N5400
1N5408
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2011/65/EU
2002/95/EC.
1N54
1N5402 DIODES
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IN 5402 rectifier
Abstract: 1N5400 1N5408 J-STD-002B Diodes 1n 5404 5407 1N54
Text: 1N5400 thru 1N5408 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features • Low forward voltage drop • Low leakage current
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
24-May-05
IN 5402 rectifier
1N5408
J-STD-002B
Diodes 1n 5404
5407
1N54
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Untitled
Abstract: No abstract text available
Text: 1N5400 thru 1N5408 Vishay General Semiconductor General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 1000 V IFSM 200 A IR 5.0 µA VF 1.2 V Tj max. 150 °C DO-201AD Features Mechanical Data • • • • Case: DO-201AD, molded epoxy body
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1N5400
1N5408
DO-201AD
DO-201AD,
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
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1N5400
Abstract: diode 1N5400 specifications
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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1N5400
DO-204A
diode 1N5400 specifications
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1N5820-1N5822
Abstract: 1N5822 data sheet 1N5400 1N5820 1N5821 1N5822 CBVK741B019 F63TNR semiconductor band color code
Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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1N5820-1N5822
1N5820
1N5822
DO-201AD
1N5820-1N5822
1N5822 data sheet
1N5400
1N5821
1N5822
CBVK741B019
F63TNR
semiconductor band color code
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1N5400
Abstract: sb540 smart SB5100 SB520 SB520-SB5100 semiconductor band color code
Text: SB520-SB5100 SB520 - SB5100 Features • Metal to silicon rectifier, majority carrier conduction. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. • Low power loss, high efficiency. • High current capability, low VF.
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SB520-SB5100
SB520
SB5100
DO-201AD
1N5400
sb540 smart
SB5100
SB520-SB5100
semiconductor band color code
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CBVK741B019
Abstract: EGP30A EGP30K F63TNR
Text: EGP30A-EGP30K EGP30A - EGP30K Features • Glass passivated cavity-free junction. • High surge current capability. • Low leakage current. • Superfast recovery time for high efficiency. • Low forward voltage, high current capability. DO-201AD COLOR BAND DENOTES CATHODE
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EGP30A-EGP30K
EGP30A
EGP30K
DO-201AD
CBVK741B019
EGP30K
F63TNR
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SB320-SB3100
Abstract: SB360 diode SB3100 SB320 SB360
Text: SB320-SB3100 SB320 - SB3100 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers
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SB320-SB3100
SB320
SB3100
DO-201AD
SB320-SB3100
SB360 diode
SB3100
SB360
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Untitled
Abstract: No abstract text available
Text: 1.5KE6.8 C A - 1.5KE440(C)A 1.5KE6.8(C)A - 1.5KE440(C)A Features • • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less
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5KE440
DO-201AE
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5KE440
Abstract: DO-201AE
Text: 1.5KE6.8 C A - 1.5KE440(C)A 1.5KE6.8(C)A - 1.5KE440(C)A Features • • • • • • • Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less
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5KE440
E210467.
DO-201AE
DO-201AE
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Untitled
Abstract: No abstract text available
Text: !" !" !" !" !"
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Schottky Diode 50V 3A
Abstract: diode 50v 5A Schottky Diode 20V 5A diode schottky 1000V 10a
Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package DO-201AD/DO-201AE Package Weight mg 1200 Product Group Type No. 1N5820 – 1N5822 SB320 – SB3200 SR320 – SR3100 SB520 – SB5200 SR520 – SR5100 SR820 – SR8100 SD1030 – SD1045
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DO-201AD/DO-201AE
1N5820
1N5822
SB320
SB3200
SR320
SR3100
SB520
SB5200
SR520
Schottky Diode 50V 3A
diode 50v 5A
Schottky Diode 20V 5A
diode schottky 1000V 10a
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