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    1N5194 JANTX Search Results

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    1N5194 JANTX Price and Stock

    Microchip Technology Inc JANTX1N5194UR/TR

    Small Signal Switching Diodes Signal or Computer Diode
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    Microchip Technology Inc JANTXV1N5194UR/TR

    Small Signal Switching Diodes Signal or Computer Diode
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    Microsemi Corporation 1N5194JANTX

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    Quest Components 1N5194JANTX 120
    • 1 $108.5392
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    1N5194JANTX 5
    • 1 $108.5392
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    Others 1N5194JANTX

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N5194JANTX 9
    • 1 $108.5392
    • 10 $97.6853
    • 100 $97.6853
    • 1000 $97.6853
    • 10000 $97.6853
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    1N5194 JANTX Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1N5194+JANTX Defense Electronics Supply Center 200mA Iout, 80V Vrrm General Purpose Silicon Rectifier Scan PDF

    1N5194 JANTX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5194

    Abstract: No abstract text available
    Text: FEATURES 1N5194 • • • • • 1N5194 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


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    PDF 1N5194 1N5194 MIL-PRF-19500/118 500mW 200mA MILPRF-19500/118 DO-35

    1N5196

    Abstract: 1N5194 JANTX 1N5194 1N5195
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


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    PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5196 1N5194 JANTX 1N5194 1N5195

    1N5194

    Abstract: 1N5195 1N5196
    Text: 1N5194 1N5195 1N5196 • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA


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    PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5194 1N5195 1N5196

    1N483B

    Abstract: 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
    Text: INCH-POUND MIL-PRF-19500/118J w/AMENDMENT 1 11 July 2010 SUPERSEDING MIL-PRF-19500/118J 27 March 2008 The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 October 2010. PERFORMANCE SPECIFICATION SHEET


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    PDF MIL-PRF-19500/118J 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N483B 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR

    Untitled

    Abstract: No abstract text available
    Text: INCH-POUND MIL-PRF-19500/118H 19 July 2007 SUPERSEDING MIL-PRF-19500/118G 22 June 2006 The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 October 2007. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,


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    PDF MIL-PRF-19500/118H MIL-PRF-19500/118G 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,

    1N5194

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


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    PDF MIL-PRF-19500/118 1N5194 500mW 200mA MIL-PRF19500/118 DO-35 LDS-0031 1N5194

    IC 7447 A

    Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
    Text: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194


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    PDF DO-35 IC 7447 A 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B

    DSAIH0002559

    Abstract: No abstract text available
    Text: DO-35 High Voltage I Current Use Advantages 1N5194 thru 1N5196 I Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


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    PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 DSAIH0002559

    BKC Semiconductors

    Abstract: No abstract text available
    Text: DO-35 High Voltage I Current Use Advantages 1 1N5194 thru 1N5196 Low Leakage Glass Diodes Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic.


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    PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 BKC Semiconductors

    q292

    Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
    Text: B K C INTERNATIONAL 30E D • 117*Hfl3 D0G0350 1 « T ' 0 \ - 0 \ BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, M A 01841 TEL NO. 508 681-0392 EN GI N E E R I N G D A T A SHEET TYPE 1N5194 M E T A L L U R G I A L L Y BONDED, SI LICON PLANAR DIODE, DO UB LE PLUG CO NS TR UC TI ON


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    PDF D0G0350 1N5194 200mA 250mW 100mA 4031-B MIL-STD-750 q292 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e

    sol 4011 be

    Abstract: 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 1N5196
    Text: MIL SPECS ICJDDD01ES QDDDÛ31 5 T T n c h -p o u n d T MIL-S-19500/118D AMENDMENT 1 28 April 1989 MILITARY SPECIFICATION S E M I C O N D U C T O R DE V I CE , DI OD E, S I L I C O N T Y PE S 1N 483B, 1 N 4 8 5 B , 1N 486B, 1N 5194, 1N 5195, 1 N 51 96 JAN, J A N T X , J A NT X V , AND J A N S


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    PDF MIL-S-19500/118D 1N483B, 1N485B, 1N486B, 1N5194, 1N5195, 1N5196 MIL-S-19500/llfiD sol 4011 be 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195

    Zener Diode 4148

    Abstract: zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER
    Text: B K C INTERNATIONAL □ 3E D | 1 1 7 3 r/HJ 1 W SILICON ZENER DIODES 1N4728 through I > .I Ï Ü Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation ELECTRICAL CHARACTERISTICS DO-41 500mW 3.33 mW/°C ,ii9* mim ait


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    PDF DQQQ271 1N4728 1N4752 500mW DO-41 1N5194 1N5195 1N5196 Zener Diode 4148 zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 IN4444 4148 zener diode 4148 ZENER

    DIODE 1N649

    Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
    Text: M ilitary Q ualifications Q u a l i f i e d Par ts Part Number Qual Level Page Part Number Qual Level Page 1N270 JAN, JAN TX, JAN TX V 32 1N4454/1N4454-1 JAN, JA N TX , JA N TX V 11 1N276 JAN, JAN TX, JAN TX V 32 1N 4464 thru 1N4496 JAN, JA N TX , JA N TX V


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    PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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