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    1N4001 SILICON DIODE Search Results

    1N4001 SILICON DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N4001 SILICON DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Dioden

    Abstract: 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2009-10-16 Nominal current Nennstrom -0.1 5.1-0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 Dioden 1N4007 diode 1N4007 EM518 EM513 1n4007 diode 1N4007 equivalent 1N4007/1N4007 1N4001 DO-204AL PDF

    EM513

    Abstract: EM518
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-21 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -4.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 EM513 EM518 PDF

    em516

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2012-10-30 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 em516 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 1N4001 . 1N4007, 1N4007-13, EM513, EM516, EM518 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-01-17 Nominal current Nennstrom ±0.1 5.1 -0.1 Type +0.5 62.5 -2.5 Ø 2.6 Ø 0.77±0.07


    Original     		1N4001 1N4007, 1N4007-13, EM513, EM516, EM518 PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. CHARACTERISTICS DIODE 1N4007 diode 1N4001 specifications 1N4007 RECTIFIER DIODE DIODE 1N4001 specifications of 1n4007 diode data sheet 1N4007 diode diode 1N4007 specifications diode cross reference 1N4002 1n4007 diode datasheet DIODE 1N4004 PDF

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001
    Text: Formosa MS Silicon Rectifier 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 1000hrs. MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics silicon diode 1N4001 specifications OF 1N4001 DIODE Diode Marking 1N4004 surge current DIODE 1N4007 CHARACTERISTICS DIODE 1N4006 1N4007 10A features of DIODE 1N4001 PDF

    silicon diode 1N4001 specifications

    Abstract: 1N4001 rectifier diode 1N4001 specifications
    Text: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


    Original     		1N4001 1N4007 DO-41 DO-41 MIL-STD-202 PDF

    ROHM 1N4001A

    Abstract: 1N4001 general diodes diodes 1N4001 1N4001A 1N4001 silicon N4002A 1N4002A
    Text: f f -4 ¿i — K/Diodes 1N4001 A/1 N4002A/1N4003A/1N4004A 1N4001 A/1 N4002A/1N4003A/ 1N4004A Silicon Diffused Junction General Rectifying Diodes • • « ft //Dimensions Unit : mm 1) * ' V 7 , i 4 i t T & -5 (JEDEC : DO41 ) 0 2) 5 o 3) • Features 1) Glass sealed type (JEDEC : DO41).


    OCR Scan     		1N4001 N4002A/1N4003A/1N4004A N4002A/1N4003A/ 1N4004A 1N4001A 1N4002A 1N4003A 1N4004A 1N4001A ROHM 1N4001A 1N4001 general diodes diodes 1N4001 1N4001 silicon N4002A PDF

    1N4001CSM

    Abstract: No abstract text available
    Text: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM)


    OCR Scan     		1N4001CSM 1N4001CSM PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O PDF

    1N4001

    Abstract: 1N4002 1N4003 1N4004 1N4005 1N4007 BY133
    Text: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O MIL-STD-202, 1N4002 1N4003 1N4004 1N4005 1N4007 BY133 PDF

    free 1N4007

    Abstract: No abstract text available
    Text: 1N4001 - 1N4007 BY133 SILICON RECTIFIER DIODES DO - 41 PRV : 50 - 1300 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


    Original     		1N4001 1N4007 BY133 DO-41 UL94V-O MIL-STD-202, free 1N4007 PDF

    diode 1N4001 specifications

    Abstract: 1n4001 1N4001 general diodes parameter 1N4001 function of 1n4007 1N4001 silicon GENERAL PURPOSE 1N4007 DIODES 1N4007 datasheet d 1n4007 equivalent components of diode 1n4001
    Text: General Purpose Rectifiers Standard Recovery Plastic Silicon Rectifiers AXIAL LEAD DO-41 Specification Features: Case: Epoxy, Molded Weight: 0.4 gram approximately Finish: All External Surfaces Corrosion Resistant And Terminal Leads Are 1N4001 KEL DEVICE MARKING DIAGRAM


    Original     		DO-41 1N4001 1N4001 1N4007 diode 1N4001 specifications 1N4001 general diodes parameter 1N4001 function of 1n4007 1N4001 silicon GENERAL PURPOSE 1N4007 DIODES 1N4007 datasheet d 1n4007 equivalent components of diode 1n4001 PDF

    1N4001-G

    Abstract: 1N4007-G 1N 4007 SMD 1N4001 SMD 1n4007 smd 4001 1n diode diode 4007 smd diode 1N4001 1N4002 1N4003
    Text: COMCHIP General Purpose Silicon Rectifiers SMD Diodes Specialist 1N4001-G Thru. 1N4007-G Voltage: 50 to 1000 V Current: 1.0 A RoHS Device Features DO-41 -Low cost construction. -Fast forward voltage drop. -Low reverse leakage. -High forward surge current capability.


    Original     		1N4001-G 1N4007-G DO-41 MIL-STD202E, QW-BG013 1N4007-G 1N 4007 SMD 1N4001 SMD 1n4007 smd 4001 1n diode diode 4007 smd diode 1N4001 1N4002 1N4003 PDF

    SURFACE MOUNT SILICON RECTIFIER

    Abstract: DO-214AC, SMA 1N4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007 PDF

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003 PDF

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount PDF

    1N4007 sma

    Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1N4007 sma DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC NRD4007 PDF

    Untitled

    Abstract: No abstract text available
    Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.


    OCR Scan     		0SDM33fl 1N4001, PDF

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007 PDF

    diode 4007 details

    Abstract: 1N4007 SURFACE MOUNT Diode ttr
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p diode 4007 details 1N4007 SURFACE MOUNT Diode ttr PDF