Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1N4001/DIODE 1N4001 Search Results

    1N4001/DIODE 1N4001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N4001/DIODE 1N4001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


    Original     		PDF 1N4001 1N4007 DO-41 DO-41 MIL-STD-202

    diode 1N4001 specifications

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


    Original     		PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications

    SURFACE MOUNT SILICON RECTIFIER

    Abstract: DO-214AC, SMA 1N4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007

    diode 1N4001 specifications

    Abstract: CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount

    1N4007 sma

    Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1N4007 sma DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC NRD4007

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007

    diode 4007 details

    Abstract: 1N4007 SURFACE MOUNT Diode ttr
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p diode 4007 details 1N4007 SURFACE MOUNT Diode ttr

    1n4001 trr

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per


    Original     		PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41

    1N400x

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       


    Original     		PDF 1N4001 1N4007 DO-41, MIL-STD-202, DO-41 1N400x

    CHARACTERISTICS DIODE 1N4007

    Abstract: DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet
    Text: 1N4001 thru 1N4007 1.0A Standard Diode Features: • • • • • Diffused Junction Low Forward Voltage Drop High Current Capability High Surge Current Capability RoHS Compliant Mechanical Data: • • • • • • Case: DO−41, Molded Plastic Terminals: Plated Leads Solderable per MIL−STD−202, Method 208


    Original     		PDF 1N4001 1N4007 DO-41, MIL-STD-202, 1N4001 CHARACTERISTICS DIODE 1N4007 DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet

    CHARACTERISTICS DIODE 1N4007

    Abstract: 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING
    Text: 1N4001/L–1N4007/L Vishay Lite–On Power Semiconductor 1.0A Rectifier Features D Diffused junction D High current capability and low forward A – 405 voltage drop D Surge overload rating to 30A peak D Low reverse leakage current D Plastic material – UL Recognition flammability


    Original     		PDF 1N4001/L 1N4007/L 1N4001/L 1N4002/L 1N4003/L 1N4004/L 1N4005/L 1N4006/L D-74025 CHARACTERISTICS DIODE 1N4007 1N4007 BL diode LT 1n4007 1N4004 LITEON 1N4007 liteon 1n4004 bl DIODE 1N4001 characteristics l4007 "Power Diode" 1N4007 DIODE 1N4001 WORKING

    CHARACTERISTICS DIODE 1N4007

    Abstract: 1N4007 DIODE 1N4001 characteristics 1N4007 OF DIODE CHARACTERISTICS DIODE 1N4006 DIODE 1N4001 VALUE OF MAX CURRENT surge current DIODE 1N4007 1N4007 rectifier diode OF 1N4001 DIODE 1N4007 marking CD
    Text: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		PDF 1N4001 1N4007 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1-Jan-2006 CHARACTERISTICS DIODE 1N4007 DIODE 1N4001 characteristics 1N4007 OF DIODE CHARACTERISTICS DIODE 1N4006 DIODE 1N4001 VALUE OF MAX CURRENT surge current DIODE 1N4007 1N4007 rectifier diode OF 1N4001 DIODE 1N4007 marking CD

    1N4001CSM

    Abstract: No abstract text available
    Text: mi 1N4001 CSM SEME LAB MECHANICAL DATA GENERAL PURPOSE SILICON RECTIFIER DIODE General Purpose Rectifier Diode In Hermetic Ceramic Surface Mount Package for A= 1.02 ± 0.10 0.04 ± 0.004 1.40 (0.055) max. High Reliability Applications SOT23 CERAMIC (CSM)


    OCR Scan     		PDF 1N4001CSM 1N4001CSM

    Untitled

    Abstract: No abstract text available
    Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.


    OCR Scan     		PDF 0SDM33fl 1N4001,

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


    OCR Scan     		PDF 1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007

    1N4007 operating frequency

    Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
    Text: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type


    OCR Scan     		PDF 1N4001 1N4007 7to27 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 operating frequency CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004

    1N4007 operating frequency

    Abstract: IC 1N4007 DIODE 1N4001 RESISTANCE 1M4002 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics 1N4001 current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating
    Text: SILICON RECTIFIER DIODE ia 1N4001— 1N4007 / i o o ~ io o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S "\^TYPE Voltage Rating


    OCR Scan     		PDF 1N4001-- 1N4007 1N4001 1M4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4001~ 1N4007 operating frequency IC 1N4007 DIODE 1N4001 RESISTANCE 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating

    n539

    Abstract: 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 N4003 diode k5 10-16 diode 1n5392 N5398
    Text: DIODE RECTIFIERS GENERAL PURPOSE /1A • 1.SA • 2A • 3A • 8A MAXIMUN Peak Reverse Voltage PRV Max Avg Rect Current @ Half-Wave Res Load 60Hz L @Ta 1N4001 1N4002 ÌN4003 1N4004 1N4005 1N400Ó 1N4007 50 100 200 400 600 800 1000 10 1.0 1.0 Ì0 1.0 1.0


    OCR Scan     		PDF 1N4001 1N4002 N4003 1N4004 1N4005 1N400Ó 1N4007 1N5392 1N5393 1N5394 n539 6A10 DIODE diode 2a05 FRI57 diode 6A10 Diode IN5398 diode k5 10-16 diode 1n5392 N5398

    Untitled

    Abstract: No abstract text available
    Text: SILICON RECTIFIER DIODE 1N4001— 1N4007 ia / ioo~ iooov FEATURES 2 .7 Ç 1 0 6 W 2.3C091 • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.9 .035)nTA 0.7(.027) ° High Surge Capability 27(1.06) MIN o 52mm Inside Tape Spacing Package Available


    OCR Scan     		PDF 1N4001â 1N4007 3C091) 2C205) 1N4002 1N4003 1N4004 1N4005 1N4006

    6A4 DIODE

    Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
    Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004


    OCR Scan     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 DO-15 RL251 6A4 DIODE AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2

    iskra diode

    Abstract: BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 1N4007 iskra diode 1N 4001 Iskra 11 250 251 4001 1n diode
    Text: ISKRA ELECTRONICS INC 5SE D MÔÔ3477 ODOOfiTE 3 T- oi-iS' “r - ot - ¿ 3 Silicijeve usmerjalne diode 1 A f \ ' | I8 9 0 0 0 | Silicon rectifier diodes 1 À \ J Ursm Urrm JpAV •f s m Tip/Type 10 ms V 10 ms (V) 1N4001 e 50 1N4002 a i too 1N4003 ’ .200


    OCR Scan     		PDF DO-41 DO-27 1N4001 1N4002 1N4003 1N4004 1N4005 1N4007 1N5401Â 1N5406Â iskra diode BY144 BY142 si diode 1N4007 BY143 Diode IN 5404 1N4007 iskra diode 1N 4001 Iskra 11 250 251 4001 1n diode