Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A
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3B75
Abstract: No abstract text available
Text: 1N 5820.1N 5822 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A
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5819 DIODE
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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diode IN 5822
Abstract: diode 1N 5822 5822 schottky 1N
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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Untitled
Abstract: No abstract text available
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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IN 5822
Abstract: diode IN 5822
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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5817
Abstract: No abstract text available
Text: 1N 5817 … 1N 5819 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 20…40 V Plastic case Kunststoffgehäuse 6.3 ±0.1 62.5 ±0.5 Ø3 1A DO-15
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DO-15
DO-204AC
UL94V-0
100LC
5817
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Untitled
Abstract: No abstract text available
Text: 1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom ±0.1 7.5 Type 62.5 ±0.5 Ø 4.5 ±0.1 Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…40 V Plastic case Kunststoffgehäuse ~ DO-201
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DO-201
UL94V-0
100/C
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5819 DIODE
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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Untitled
Abstract: No abstract text available
Text: 1N 5820.1N 5822 *0 Axial lead diode Schottky barrier rectifiers diodes 1N 5820.1N 5822 Forward Current: 3 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$'
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Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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5819 DIODE
Abstract: diode IN 5819 diode 5819 5819 1N 5819 diode
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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Untitled
Abstract: No abstract text available
Text: 1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…40 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.
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DO-201
UL94V-0
100/C
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5822
Abstract: 5822-40
Text: Diotec 1N 5820 … 1N 5822 Si-Schottky-Rectifiers Si-Schottky-Gleichrichter Nominal current – Nennstrom Ø 4.5 ±0.1 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…40 V Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.
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DO-201
UL94V-0
5822
5822-40
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1N5818 SEMTECH
Abstract: 1N5817 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5818 SEMTECH
1N5817
1N5818
1N5819
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5817
Abstract: DO-204AC
Text: 1N 5817 … 1N 5819 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…40 V Plastic case Kunststoffgehäuse DO-15 DO-204AC Weight approx. – Gewicht ca.
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DO-15
DO-204AC
UL94V-0
100/C
5817
DO-204AC
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Untitled
Abstract: No abstract text available
Text: 1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Nominal current – Nennstrom ±0.1 7.5 ±0.1 62.5 ±0.5 Ø 4.5 3A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20…40 V Plastic case Kunststoffgehäuse ~ DO-201
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DO-201
UL94V-0
100LC
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1N5817
Abstract: 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5817
1N5818
1N5819
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1N5817
Abstract: 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5817
1N5818
1N5819
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A1W TRANSISTOR
Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201
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403SE
1N1183
1N1615
1N3743
1N4006
1N5002
1N1185
1N1616
1N3744
1N4007
A1W TRANSISTOR
N4001 diode
a39 diode
a1w* transistor
DIODE 1N1343
A1W diode
1N5815 Diode
diode 1N5825
TRANSISTOR A52
1N4822
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SCHOTTKY DIODES CROSS REFERENCE
Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C
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BAR11
LL101
BAT47/48
BAT19
BAT29
10/BAT19
10/BAT
SCHOTTKY DIODES CROSS REFERENCE
SD 102 M
BAT29 equivalent
1ss99
BA 5818
SD-101 equivalent
bat 301 l
BAR10
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SD5171
Abstract: IN5807 1N6811 DO-203AB Package 1N580a 1N5420 1N5415 1N5416 1N5417 1N5418
Text: OPTEK TECHNOLOGY INC 4ÖE D • L^TflSflO D0G1427 TT1 ■ OTK FAST RECOVERY RECTIFIERS 1N 5415-1N 5420; 1N 5615-1N 5623; T 0 3-15 1N 5802-1N 5811 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is
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D0G1427
1N5415-1N5420;
1N5615-1N5623;
T03-15
1N5802-1N5811
SD5171161
DO-Z03AB
IN6095
IN6097
IN6098
SD5171
IN5807
1N6811
DO-203AB Package
1N580a
1N5420
1N5415
1N5416
1N5417
1N5418
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diode si 1n 5817
Abstract: 5819 DIODE diode IN 5817 diode 5819 1A DIODE 1N 1N5817 1N5818 1N5819 diode 5817 diode IN 5819
Text: 1N 5817 .1N 5819 SCHOTTKY BARRIER DIODE Features • • • • • • • • Î Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Guardring for overvoltage protection Low power loss,
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50mvp-p
diode si 1n 5817
5819 DIODE
diode IN 5817
diode 5819
1A DIODE 1N
1N5817
1N5818
1N5819
diode 5817
diode IN 5819
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