1N4148
Abstract: 4148
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.
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DO-35
OD-27
150/C)
1N4148
4148
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Untitled
Abstract: No abstract text available
Text: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.
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DO-35
OD-27
150/C)
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diode t 4148
Abstract: 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151
Text: Diotec 1N 4148, 1N 4150, 1N 4151, 1N 4448, Small Signal Si-Diodes Si-Allzweck-Dioden Nominal current Nennstrom Ø 1.9 150 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V max Glass case Glasgehäuse DO-35 SOD-27 Ø 0.56 max Dimensions / Maße in mm
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DO-35
OD-27
diode t 4148
4148
T 4148
diode 4148
diode IN 4148
1N4148
IN 4148 diode
t 4148 diode
4148 diode
4151
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5349B
Abstract: 5357B 5364b 5366B 5352b 5359b 5369b 5363b 5353b 5350B
Text: 1N 5345B … 1N 5388B 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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5345B
5388B
DO-201
UL94V-0
5349B
5357B
5364b
5366B
5352b
5359b
5369b
5363b
5353b
5350B
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5346B
Abstract: 5388B 5359B 5368B 5366B 5363b 5358B 5349B 5369b 5375B
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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Original
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5345B
5388B
DO-201
UL94V-0
5346B
5388B
5359B
5368B
5366B
5363b
5358B
5349B
5369b
5375B
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5349B
Abstract: 5352B 5353B 5364b 5375B 5366B 5363B 5359B 5350B 5367B
Text: 1N 5347B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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Original
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5347B
5388B
UL94V-0
DO-201
5347B
5348B
5349B
5350B
5351B
5352B
5353B
5364b
5375B
5366B
5363B
5359B
5367B
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IN 5349B
Abstract: 5377B 5357B 5368B 5363b in 5352b in 5359b 5349b 5364b 5352b
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissipation Maximale Verlustleistung 5W Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse
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Original
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5345B
5388B
DO-201
UL94V-0
IN 5349B
5377B
5357B
5368B
5363b
in 5352b
in 5359b
5349b
5364b
5352b
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zener 5359B
Abstract: 5349B 5346B 5347B zener 5349b 5353B 5359b 5352b 5362B 5350B
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Nominal Zener voltage Nominale Zener-Spannung 8.2…200 V Standard tolerance of Zener voltage Standard-Toleranz der Zener Spannung ±5% Plastic case – Kunststoffgehäuse ~ DO-201
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5345B
5388B
DO-201
UL94V-0
zener 5359B
5349B
5346B
5347B
zener 5349b
5353B
5359b
5352b
5362B
5350B
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in 5359b
Abstract: IN 5349B in 5352b 5357B 5346B 5369b 5349b 5388b 5345B 5352b
Text: Diotec 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Ø 4.5 ±0.1 Silizium-Leistungs-Z-Dioden Nominal breakdown voltage Nenn-Arbeitsspannung 8.7…200 V Standard tolerance of Z-voltage Standard-Toleranz der Arbeitsspannung ± 5 % (E24) Plastic case – Kunststoffgehäuse
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5345B
5388B
DO-201
UL94V-0
in 5359b
IN 5349B
in 5352b
5357B
5346B
5369b
5349b
5388b
5345B
5352b
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5346B
Abstract: 5349B 5375B 5353b 5359B 5345B 5350B 1n5376b 5361B 5358B
Text: 1N 5345B … 1N 5388B 5 W Silicon-Power-Z-Diodes Silizium-Leistungs-Z-Dioden Maximum power dissipation Maximale Verlustleistung Ø 4.5 5W ±0.1 7.5 ±0.1 62.5 ±0.5 Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse ~ DO-201 Weight approx. – Gewicht ca.
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5345B
5388B
DO-201
UL94V-0
5345B
5346B
5347B
5348B
5349B
5350B
5375B
5353b
5359B
1n5376b
5361B
5358B
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5408 diode
Abstract: IN 5408 diode 1N5408 Diode 1N5408 1N5408 equivalent DIODE 1n5408 diode 5408 IN 5408 5408 DIODE IN 5408 1n5408 diode
Text: Extract from the online catalog EMG 45-DIO 8E-1N5408 Order No.: 2949389 The illustration shows version EMG 45-DIO 8E Dioden-Modul, mit 8 Dioden, einzeln beschaltbar, Diodentyp 1N 5408
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45-DIO
8E-1N5408
IF-2007)
ofE-1N5408
8E-1N5408
5408 diode
IN 5408 diode
1N5408 Diode 1N5408
1N5408 equivalent
DIODE 1n5408
diode 5408
IN 5408
5408
DIODE IN 5408
1n5408 diode
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BY228G
Abstract: No abstract text available
Text: D-BY228G D-BY228G Standard Si- Rectifier Didoes Standard Si- Gleichrichter Dioden Version 2012-04-04 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.1 ±0.1 Ø 1.2 1500 V Plastic case Kunststoffgehäuse 7.5 Type
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D-BY228G
DO-201
UL94V-0
D-BY228G
BY228G
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BZV58C200
Abstract: BZV58C12 BZV58C8V2 BZV58C10 BZV58C11
Text: BZV58C8V2 … BZV58C200 5 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Version 2004-10-01 Maximum power dissipation Maximale Verlustleistung ±0.1 ±0.1 7.5 Type 62.5 ±0.5 Ø 4.5 5W Nominal Z-voltage
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BZV58C8V2
BZV58C200
DO-201
UL94V-0
BZV58C110
BZV58C120
BZV58C130
BZV58C150
BZV58C160
BZV58C180
BZV58C200
BZV58C12
BZV58C8V2
BZV58C10
BZV58C11
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Untitled
Abstract: No abstract text available
Text: MM3Z2V4 . MM3Z47 200 mW MM3Z2V4 . MM3Z47 (200 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-04-11 Maximum power dissipation Maximale Verlustleistung 1.7±0.1 1±0.1 Nominal Z-voltage – Nominale Z-Spannung
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MM3Z47
OD-323
UL94V-0
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Untitled
Abstract: No abstract text available
Text: IN 5400K .1N 5408K Silizium Gleichrichter Silicon Rectifier 3A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0
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5400K
5408K
UL94V-0
0D1RS14
DGG174
000017S
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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fr diode 205
Abstract: diode fr 207 TFK 450 B2 41880 A751
Text: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “
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OCR Scan
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1N41510
fr diode 205
diode fr 207
TFK 450 B2
41880
A751
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Untitled
Abstract: No abstract text available
Text: 1 N 5345 B.1 N 5388 B 5 W Silizium-Leistungs-Z-Dioden Silicon-Power-Z-Diodes Nominal breakdown voltage Nenn-Arbeitsspannung 8.7.200 V Tolerance o f zener voltage Toleranz der Arbeitsspannung ±5% /4 .5 " Plastic case KunststofFgehäuse ~ D0-201 Weight approx.
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OCR Scan
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D0-201
UL94V-0
0D1RS14
DGG174
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PDF
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dsdi 7-015 A
Abstract: DSDI 17-04 DSD 17-14 b DSDI 71-16 DSD 12-16 dsdi 7-015 DSDI DSDI 7-01 B DSDI 20-01 b DSDI 17-14 b
Text: A S E A BROUN/ABB SENICON Schnelle Dioden Diode DSD Vrrm Fast switching diodes If r m s Ki If a v i Tc - 100°C A °C A(°C) DSDI 5-04 A DSD1 5-06 A DSDI 5-08 A 400 600 800 10 DSDI 7-01 A DSDI 7-015 A DSDI 7-02 A 100 10 ft vF If Ir r m (10 ms) 10 ms T y j =• 45°C
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OCR Scan
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DO-200
1H1T1SW27T
dsdi 7-015 A
DSDI 17-04
DSD 17-14 b
DSDI 71-16
DSD 12-16
dsdi 7-015
DSDI
DSDI 7-01 B
DSDI 20-01 b
DSDI 17-14 b
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ABB DSDI 17-04
Abstract: dsdi 7-015 DSDI 17-14 b DSDI 5-08 abb DSDi 110 DSDI 20-01 b DSDI 17-10 b dsdi 7-015 A DSD 35-12 dsdi 7 01A
Text: A S E A BROüJN/ABB A3 SENICON OG4ÔBOÔ Q O D D l t B D1 0 3 - 0 / T - Schnelle Dioden D iode V rr m D SD Fast switching diodes Ifrms DSOI Tc Ifavm Tc - lOCPC A(°C) A(°C) If a v i 8,3 ms DSDI 5-04 A DSD1 5 -0 6 A DSDI 5 -0 8 A DSDI 7-01 A DSDI 7-01 5 A
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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OCR Scan
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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101ra100
Abstract: 22RC10 71RA120 36RA80 101RC60 PR002W 40RCS60 151ra100 250pa120 250RA80
Text: EUROPEAN CATALOGUE CATALOGO EUROPEO EUROPAISCHER KATALOG CATALOGUE EUROPEEN In tro d u c tio n The products specified in this shortform catalogue have been selected from the comprehensive range manufactured by the International Rectifier group of Companies.
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c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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