AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167roducts
AN1064
CY62167EV30LL
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CY7C681
Abstract: CY62167EV30LL-45ZXIT US1260 CY7C68A
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 16-Mbit (1M x 16 / 2M x 8) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL.
10-Jun-2011
CY7C681
CY62167EV30LL-45ZXIT
US1260
CY7C68A
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Untitled
Abstract: No abstract text available
Text: DS2227 Flexible NV SRAM Stik www.dalsemi.com PIN ASSIGNMENT FEATURES 1 1M SRAM 1M SRAM 1M SRAM Flexibly organized as 128k x 32, 256k x 16, or 512k x 8 bits Data retention >10 years in the absence of VCC Nonvolatile circuitry transparent to and independent from host system
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DS2227
72-position
72-Pin
DS2227
72-PIN
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72-PIN
Abstract: DS2227 DS2227-100 DS2227-120 DS2227-70 DS9072-72V D31-D36
Text: DS2227 Flexible NV SRAM Stik www.dalsemi.com FEATURES PIN ASSIGNMENT 1 1M SRAM 1M SRAM 1M SRAM Flexibly organized as 128k x 32, 256k x 16, or 512k x 8 bits Data retention >10 years in the absence of VCC Nonvolatile circuitry transparent to and independent from host system
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DS2227
72-position
72-Pin
DS2227
72-PIN
DS2227-100
DS2227-120
DS2227-70
DS9072-72V
D31-D36
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AN1064
Abstract: CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
CY62167EV30LL
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CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30 CY62167EV30LL
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-ball
48-pin
CY62167EV30LL-45ZXI
AN1064
CY62167EV30LL
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 2.20V–3.60V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-Ball
48-Pin
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • • • • TSOP I package configurable as 1M x 16 or as 2M x 8 SRAM Very high speed: 45 ns Wide voltage range: 2.20V–3.60V Ultra low standby power — Typical standby current: 1.5 µA
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CY62167EV30
16-Mbit
48-ball
48-pin
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Untitled
Abstract: No abstract text available
Text: 1M x 8 Static RAM MSM81000B - 020 Issue 5.0 December 1999 Description The MSM81000B is a 1M x 8 SRAM monolithic device available in Chip Size BGA Ball Grid Array package, with access times of 20ns. The device is available to commercial and industrial temperature
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MSM81000B
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Untitled
Abstract: No abstract text available
Text: 1M x 8 Static RAM MSM81000B - 020 Issue 5.0 December 1999 Description The MSM81000B is a 1M x 8 SRAM monolithic device available in Chip Size BGA Ball Grid Array package, with access times of 20ns. The device is available to commercial and industrial temperature
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MSM81000B
140mW
020/48D
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Untitled
Abstract: No abstract text available
Text: CY62158E MoBL 8-Mbit 1M x 8 Static RAM 8-bit (1M x 8) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power
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CY62158E
44-Pin
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AN1064
Abstract: CY62158ELL-45ZSXI
Text: CY62158E MoBL 8-Mbit 1M x 8 Static RAM 8-bit (1M x 8) Static RAM is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power
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CY62158E
AN1064
CY62158ELL-45ZSXI
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CY62167EV30LL-45ZXI
Abstract: AN1064 CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
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CY62167EV30
16-Mbit
48-Ball
48-Pin
CY62167EV30LL-45ZXI
AN1064
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AN1064
Abstract: CY62167EV30
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM Features • TSOP I Package Configurable as 1M x 16 or 2M x 8 SRAM ■ Very High Speed: 45 ns ■ Temperature Ranges ❐ Industrial: –40°C to +85°C ❐ Automotive-A: –40°C to +85°C ■ Wide Voltage Range: 2.20V to 3.60V
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CY62167EV30
16-Mbit
48-Ball
48-Pin
AN1064
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Untitled
Abstract: No abstract text available
Text: CY62167EV30 MoBL 16-Mbit 1M x 16 / 2M x 8 Static RAM 168) Static RAM Features • TSOP I package configurable as 1M x 16 or 2M x 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C
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CY62167EV30
16-Mbit
48-Ball
48-Pin
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Untitled
Abstract: No abstract text available
Text: GS74104ATP/J/X SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 6, 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 6, 7, 8, 10, 12 ns • CMOS low power operation: 155/135/120/95/85 mA at
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GS74104ATP/J/X
32-pin
44-pin
74104A
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ua 471
Abstract: GS74104TP-10 GS74104TP-10I GS74104TP-12 GS74104TP-12I GS74104TP-15 GS74104TP-15I GS74104TP-8 GS74104TP-8I
Text: GS74104TP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at
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GS74104TP/J
32-pin
44-pin
GS74104
GS74104Rev1
1/2000K
2/2000L
ua 471
GS74104TP-10
GS74104TP-10I
GS74104TP-12
GS74104TP-12I
GS74104TP-15
GS74104TP-15I
GS74104TP-8
GS74104TP-8I
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ua 471
Abstract: GS74104A GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-8 GS74104ATP-8I
Text: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time
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GS74104ATP/J
32-pin
44-pin
GS74104A
74104A
ua 471
GS74104ATP-10
GS74104ATP-10I
GS74104ATP-12
GS74104ATP-12I
GS74104ATP-8
GS74104ATP-8I
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Untitled
Abstract: No abstract text available
Text: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 130/105/95 mA at minimum cycle time
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GS74104ATP/J
32-pin
44-pin
GS74104A
GS74104ATP-8T
74104A
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Untitled
Abstract: No abstract text available
Text: GS74104ATP TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features TSOP-II 1M x 4-Pin Configuration • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time
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GS74104ATP
44-pin
74104A
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74104
Abstract: GS74104A GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-8 GS74104ATP-8I
Text: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time
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GS74104ATP/J
32-pin
44-pin
GS74104A
74104A
74104
GS74104ATP-10
GS74104ATP-10I
GS74104ATP-12
GS74104ATP-12I
GS74104ATP-8
GS74104ATP-8I
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SP612B-7
Abstract: No abstract text available
Text: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns
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LH5P8128
32-pin,
600-mil
525-mil
LH5P8128
5P812B-11
SP812S-11
SP612B-7
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Untitled
Abstract: No abstract text available
Text: LH5P8129 CMOS 1M 128K x 8 CS-Control Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8129 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (MAX.): 60/80/100 ns
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PDF
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LH5P8129
32-pin,
600-mil
525-mil
32-PIN
LH5P8129
|
Untitled
Abstract: No abstract text available
Text: LH5P8128 CMOS 1M 128K X 8 Pseudo-Static RAM FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH5P8128 is a 1M bit Pseudo-Static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times (M AX.): 6 0 /8 0 /1 0 0 ns
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LH5P8128
32-pin,
600-m
525-mill
LH5P8128
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