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    1M X 16 MEMORY MODULE Search Results

    1M X 16 MEMORY MODULE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    1M X 16 MEMORY MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED2M361JSQW-XX FAST PAGE MODE, 2M X 36 SIMM Using 1M X 16 DRAM and 1M X 4 QUAD CAS DRAM, 1K REFRESH, 5V DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVED2M361JSQW-XX is a 2M bit X 36 Dynamic RAM high density memory module.


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    PDF AVED2M361JSQW-XX AVED2M361JSQW-XX 42-pin 24-pin 72-pin 72-pin

    flash dimm

    Abstract: DQ32-DQ47 DQ48-DQ63 A1871 A1469
    Text: SL286411-90GA4 R/S/V B 1M x 64 Bits Flash Memory Module (3.3V Only)—Preliminary FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL286411-90GA4(R/S/V)B is for a 1M x 64 bits flash memory module. The module consists of four 1M x 16 bits CMOS flash memory in 40-pin TSOP packages mounted


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    PDF SL286411-90GA4 40-pin an168-pin piDQ12 A0-A19 DQ48-DQ63 DQ16-DQ31 flash dimm DQ32-DQ47 DQ48-DQ63 A1871 A1469

    E28F016SA-070

    Abstract: flash memory 28F008SA DQ143
    Text: SL29041-90 T/G A1(R/S/V)I 1M X 32 Bits (4MB) Flash Memory Module (5V Supply; 12V Program ) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29041-90(T/G)A1(R/S/V)I is a 1M x 32 bits flash memory module. The SL29041-90(T/G)A1(R/S/V)I consists of two 1M x 16 bits CMOS flash memory in 56-pin


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    PDF SL29041-90 56-pin 80-pin DQ16-DQ31 A1-A20 E28F016SA-070 flash memory 28F008SA DQ143

    28F016SA

    Abstract: E28F016SV-070
    Text: SL29041-70 T/G A8SI 1M X 32 Bits Flash Memory Module (5V Supply; 5V/12V Program ) FEATURES GENERAL DESCRIPTION • • • • • • SiliconTech’s SL29041-70(T/G)A8SI is a 1M x 32 bits flash memory module. The module consists of two 1M x 16 bits CMOS flash memory in 56-pin TSOP-I packages mounted on an 80pin glass epoxy substrate. Decoupling capacitors of 0.1µF are


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    PDF SL29041-70 V/12V 56-pin 80pin E28F016SV-070 A1-A20 DQ0-DQ15 DQ16-DQ31 28F016SA

    KVR133X64SC3

    Abstract: 1m x 16 memory module 8M X 16 SDRAM 4MX16
    Text: Memory Module Specification KVR133X64SC3/64 PC133 SDRAM 144-Pin CL3 SODIMM Memory Module DESCRIPTION: This document describes ValueRAM's CL3 8M x 64-bit 64MB SDRAM (Synchronous DRAM) PC133 Small Outline DIMM memory module. The components on this module include eight 4M x 16-bit (1M x 16-bit x 4 Bank / PC133 components) 4K Refresh SDRAM


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    PDF KVR133X64SC3/64 PC133 144-Pin 64-bit 16-bit 16-bit 1000ns KVR133X64SC3 1m x 16 memory module 8M X 16 SDRAM 4MX16

    TLA064

    Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


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    PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx TLA064 S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


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    PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx

    S29PL129J

    Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


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    PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx S71PL129JA0 S71PL129JB0 S71PL129JC0

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


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    PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129J S29PL129J S71PL129Jxx

    Untitled

    Abstract: No abstract text available
    Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION


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    PDF S71PL129JC0/S71PL129JB0/S71PL129JA0 16-bit) S71PL129Jxx 29this

    Untitled

    Abstract: No abstract text available
    Text: MOSEL VITELIC Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PRELIMINARY V1816J32 V1816J32 1M x 32 EDO MEMORY MODULE Description 1,097,152 x 32 bit organization Utilizes 1M x 16 CMOS DRAMs Fast access time: 60 ns EDO Page mode operation Low power dissipation


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    PDF V1816J32 72-lead cycles/16ms V1816J32

    S29GL032A

    Abstract: S29GL-A S71GL032A
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) pSRAM S71GL032A Based MCPs Cover Sheet Data Sheet (Advance Information)


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    PDF S71GL032A 16-bit) 1M/512K/256K S29GL032A S29GL-A

    HMD1M36M3EG

    Abstract: edo dram 72-pin simm 4 m
    Text: HANBit HMD1M36M3EG 4Mbyte 1Mx36 72-pin SIMM EDO with Parity MODE, 1K Ref. 5V Part No. HMD1M36M3EG GENERAL DESCRIPTION The HMD1M36M3EG is a 1M x 36 bit dynamic RAM high-density memory module. The module consists of two CMOS 1M x 16 bit DRAMs in 42-pin TSOP packages and one CMOS 1M x 4bit Quad CAS DRAM in 28pin SOJ package


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    PDF HMD1M36M3EG 1Mx36) 72-pin HMD1M36M3EG 42-pin 28pin 72-pin. 72pin HMD1M36M3EG-5 edo dram 72-pin simm 4 m

    sram 256mb 64X

    Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
    Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM


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    PDF S71PL-J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K sram 256mb 64X S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL256N S71PL127J

    STI321000A

    Abstract: No abstract text available
    Text: STI321000A 72-PIN SIMMS 1M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI321000A is a 1M bit x 32 Dynamic RAM high density memory module. The Simple Technology STI321000A consist of two CMOS 1M x 16 bit DRAMs in 42pin SOJ package mounted on a 72-pin glass epoxy substrate.


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    PDF STI321000A STI321000A-60 STI321000A-70 STI321000A-80 110ns 130ns 150ns 72-PIN STI321000A

    Untitled

    Abstract: No abstract text available
    Text: STI361000A 72-PIN SIMMS 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI361000A is a 1M bits x 36 Dynamic RAM high density memory module. The Simple Technology STI361000A consist of two CMOS 1M x 16 DRAMs in 42-pin


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    PDF STI361000A 72-PIN STI361000A 42-pin 20-pin STI361

    DD660

    Abstract: No abstract text available
    Text: M OSEL VITEU C PRELIMINARY V1816J32 1M x 32 EDO MEMORY MODULE Features Description • ■ ■ ■ ■ ■ The V1816J32 memory module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line module. The 2M x 32 memory module uses 4 Mosel-Vitelic 1M x 16 DRAMs. The x32 modules


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    PDF V1816J32 72-lead cycles/16ms b3S33 DD660

    Untitled

    Abstract: No abstract text available
    Text: STI721007D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with EDO Mode and ECC FEATURES GENERAL DESCRIPTION • The Simple Technology STI721007D1-xxVG is a 1M x 72 bit Dynamic RAM high density memory module. The module consists of four 1M x 16 bit DRAMs in a 44-pin TSOP packages


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    PDF STI721007D1 168-PIN -60VG -70VG 110ns 130ns STI721007D1-xxVG 44-pin 20-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5321204AW/AWG KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIMM, 5V, 1K Refresh using 1M x 16 DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The • Part Identification - KMM5321204AW 1024 cycles/16 ms Ref, SOJ, Solder


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    PDF KMM5321204AW/AWG KMM5321204AW/AWG 1Mx32 KMM5321204AW KMM5321204AW cycles/16 KMM5321204AWG 1Mx16bit

    simm 72pin

    Abstract: No abstract text available
    Text: O K I Semiconductor MSC23B236A-XXBS8/PS8 2,097,152-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The Oki M SC23B236A -xxBS8/D S8 is a fully decoded 2,097,152-word x 36-bit CMOS dynamic random access memory composed of four 16-Mb 1M x 16 DRAMs in SOJ and four 2-M b (1M


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    PDF MSC23B236A-XXBS8/PS8 152-Word 36-Bit MSC23B236A-xxBS8/DS8 16-Mb 72-pin 36-bit simm 72pin

    Untitled

    Abstract: No abstract text available
    Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS


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    PDF KMM5321204AW KMM5321204AW/AWG 1Mx32 KMM5321204AW 1Mx16bit 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC V404J232 and V404J236 2M X 32 and 2M X 36 CMOS MEMORY MODULES PRELIMINARY Features Description • ■ ■ ■ ■ ■ The V404J232 memory Module is organized as 2,097,152 x 32 bits in a 72-lead single-in-line mod­ ule. The 2M x 32 memory module uses 16 MoselVitelic 1M x 4 DRAMs. The V404J236 Memory


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    PDF V404J232 V404J236 72-lead 72lead V404J232/236

    Untitled

    Abstract: No abstract text available
    Text: STI322000A 72-PIN SIMMS 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000A is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000A consist of four CMOS 1M x 16 DRAMs in 42-pin


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    PDF STI322000A STI322000A-60 STI322000A-70 STI322000A-80 110ns 130ns 150ns 72-PIN STI322000A

    Untitled

    Abstract: No abstract text available
    Text: STI362000A 72-PIN SIMMS 2M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI362000A is a 2M bits x 36 Dynamic RAM high density memory module. The Simple Technology STI362000A consist of four CMOS 1M x 16 DRAMs in 42-pin


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    PDF STI362000A 72-PIN STI362000A 42-pin 20-pin STI362000A-xxT) STI362000A-xxG)