dalsa ft
Abstract: TRANSISTOR BC 157 pin connection circuit diagram water level probe sensor 1024H AN01 BG40 FTT1010M image sensor x-ray infrared sensor TOP 1738 ccd image area sensor 120 frame rate
Text: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V
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FTT1010M
1024H
dalsa ft
TRANSISTOR BC 157 pin connection
circuit diagram water level probe sensor
AN01
BG40
FTT1010M
image sensor x-ray
infrared sensor TOP 1738
ccd image area sensor 120 frame rate
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DALSA AREA CCD
Abstract: dalsa FT frame transfer
Text: IMAGE SENSORS DATA SHEET FT18 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2006 December 19 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V
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1024H
DALSA AREA CCD
dalsa FT
frame transfer
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BC 9015 transistor
Abstract: Melles Griot dalsa FT FTT1010-M ccd image sensor CCD Linear Image Sensor CG1 HOYA Dalsa FTT1010M TRANSISTOR BC 157
Text: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V
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FTT1010M
1024H
BC 9015 transistor
Melles Griot
dalsa FT
FTT1010-M
ccd image sensor
CCD Linear Image Sensor
CG1 HOYA
Dalsa
FTT1010M
TRANSISTOR BC 157
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel
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LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
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TRANSISTOR SOT23, Vbe 8V
Abstract: FMMT614 DSA003700
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
TRANSISTOR SOT23, Vbe 8V
FMMT614
DSA003700
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Untitled
Abstract: No abstract text available
Text: EMC2 / UMC2N / FMC2A Transistors 1 lO/lI=20 OUTPUT VOLTAGE : VO on (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 OUTPUT CURRENT : Io (A)
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-500m
-200m
-100m
-50m-100m
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BFR92 application note
Abstract: FT50M Dalsa
Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2007 September 21 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V
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FT50M
FT50M
1024H
BFR92 application note
Dalsa
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FT50M
Abstract: line follower sensor CCD IMAGE BFR92 application note Ir sensor pin details linear CCD 512 liquid float level optical sensor 76131 ccd image sensor frame transfer
Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 April 29 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V
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FT50M
1024H
FT50M
line follower sensor
CCD IMAGE
BFR92 application note
Ir sensor pin details
linear CCD 512
liquid float level optical sensor
76131
ccd image sensor
frame transfer
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BFR92 application note
Abstract: frame transfer
Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 January 16 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V
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FT50M
FT50M
1024H
BFR92 application note
frame transfer
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XQ5VFX130T
Abstract: XQ5VSX50T
Text: 74 Virtex-5Q FPGA Data Sheet: DC and Switching Characteristics Product Specification DS714 v2.2 January 17, 2011 Virtex-5Q FPGA Electrical Characteristics Defense-grade Virtex -5Q FPGAs are available in -2I, -1I, and -1M (only FX70T and FX100T devices in -1M) speed
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DS714
FX70T
FX100T
UG192,
UG193,
UG194,
XQ5VFX130T
XQ5VSX50T
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 November 28 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V
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FT50M
FT50M
1024H
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100-PIN
Abstract: GVT71256ZC36 GVT71512ZC18
Text: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are
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GVT71512ZC36/GVT71A24ZC18
36/1M
GVT71512ZC36
GVT71A24ZC18
288x36
576x18
71512ZC36
71A24ZC18
100-PIN
GVT71256ZC36
GVT71512ZC18
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tdb 117
Abstract: CY7C1471V33 CY7C1473V33 CY7C1475V33
Text: CY7C1471V33 CY7C1473V33 CY7C1475V33 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O
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CY7C1471V33
CY7C1473V33
CY7C1475V33
36/4M
18/1M
133-MHz
36/4M
18/1M
150-MHz
tdb 117
CY7C1471V33
CY7C1473V33
CY7C1475V33
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CY7C1471V25
Abstract: CY7C1473V25 CY7C1475V25
Text: CY7C1471V25 CY7C1473V25 CY7C1475V25 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O
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CY7C1471V25
CY7C1473V25
CY7C1475V25
36/4M
18/1M
133-MHz
36/4M
18/1M
150-MHz
CY7C1471V25
CY7C1473V25
CY7C1475V25
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Untitled
Abstract: No abstract text available
Text: CY7C1471V25 CY7C1473V25 CY7C1475V25 ADVANCE INFORMATION 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O
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CY7C1471V25
CY7C1473V25
CY7C1475V25
36/4M
18/1M
133-MHz
36/4M
18/1M
150-MHz
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W964L6ABN
Abstract: W964L6ABN80
Text: W964L6ABN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3
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W964L6ABN
W964L6ABN
W964L6ABN80
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toshiba M7
Abstract: No abstract text available
Text: TO SH IB A RN1112,RN1113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 1m 1m 7 g uRN111 m u -m u m m u m u 'm u Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • 1.6 ± 0.2 0.8 ±0.1
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RN1112
RN1113
RN111
RN2112,
RN2113
RN1112fRN1113
RN1112
toshiba M7
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Untitled
Abstract: No abstract text available
Text: TOSHIBA CNY17-2,CNY17-3,CNY17-4 TOSHIBA PHOTOCOUPLER r N v Y• 1■ 7« - 3 m g T GaAs IRED & PHOTO-TRANSISTOR N 7 - ^ m 'm Ym 1m m mm g T N m Ym 1m m7 - d m AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER TWISTED PAIR LINE RECEIVER
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OCR Scan
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CNY17-2
CNY17-3
CNY17-4
CNY17-2
CNY17-3
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motorola surface mount marking code
Abstract: motorola diode marking code MU diode MARKING CODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diodes M 1M A 151W KT1 M 1M A 152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3
inch/10
M1MA151WKT1
M1MA152WKT1
100S1
151WK
motorola surface mount marking code
motorola diode marking code
MU diode MARKING CODE
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Untitled
Abstract: No abstract text available
Text: TA7712P/F TO SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Tm mAm7m 7m 1m 3 P g Tm mAm7m 7m 1m 3 F • ■ 3 PHASE BI-DIRECTIONAL FOR MOTOR CONTROL IC FEATURES • FG is not required. System for obtaining rotation signal through position
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TA7712P/F
DIP20-P-300-2
SSOP24-P-300-1
360Hz
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marking code k4t
Abstract: A151W Q0040 A152W
Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59
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M1MA151WKT1/D
SC-59
M1MA151/2WKT1
inch/3000
M1MA151/2WKT3
inch/10
A151W
A152W
1MA151W
marking code k4t
Q0040
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Untitled
Abstract: No abstract text available
Text: September 1990 Editor 2.0 FUJITSU DATA SHEET MB82B001-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B001 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher
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MB82B001-25/-35
MB82B001
MB82B001-25
MB82B001-35
C-28P-M
C280S5S-1C
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Untitled
Abstract: No abstract text available
Text: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp
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LH6N10/LH6N11
LH6N10/11
128KX8)
LH6N10
LH6N11
LH6N10/LH6N11
100ns
32-pin
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