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    1M TRANSISTOR Search Results

    1M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    1M TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dalsa ft

    Abstract: TRANSISTOR BC 157 pin connection circuit diagram water level probe sensor 1024H AN01 BG40 FTT1010M image sensor x-ray infrared sensor TOP 1738 ccd image area sensor 120 frame rate
    Text: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FTT1010M 1024H dalsa ft TRANSISTOR BC 157 pin connection circuit diagram water level probe sensor AN01 BG40 FTT1010M image sensor x-ray infrared sensor TOP 1738 ccd image area sensor 120 frame rate

    DALSA AREA CCD

    Abstract: dalsa FT frame transfer
    Text: IMAGE SENSORS DATA SHEET FT18 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2006 December 19 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 2/3-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF 1024H DALSA AREA CCD dalsa FT frame transfer

    BC 9015 transistor

    Abstract: Melles Griot dalsa FT FTT1010-M ccd image sensor CCD Linear Image Sensor CG1 HOYA Dalsa FTT1010M TRANSISTOR BC 157
    Text: IMAGE SENSORS DATA SHEET FTT1010M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2007, April 17 DALSA Professional Imaging Product Specification 1M Frame Transfer CCD Image Sensor • 1-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FTT1010M 1024H BC 9015 transistor Melles Griot dalsa FT FTT1010-M ccd image sensor CCD Linear Image Sensor CG1 HOYA Dalsa FTT1010M TRANSISTOR BC 157

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel


    Original     		PDF LMBTA13LT1G LMBTA14LT1G LMBTA13LT3G 3000/Tape LMBTA14LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF FMMT614 500mA 500mA, 100mA, 100mHz

    TRANSISTOR SOT23, Vbe 8V

    Abstract: FMMT614 DSA003700
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF FMMT614 500mA 500mA, 100mA, 100mHz TRANSISTOR SOT23, Vbe 8V FMMT614 DSA003700

    Untitled

    Abstract: No abstract text available
    Text: EMC2 / UMC2N / FMC2A Transistors 1 lO/lI=20 OUTPUT VOLTAGE : VO on (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current DTr2 OUTPUT CURRENT : Io (A)


    Original     		PDF -500m -200m -100m -50m-100m

    BFR92 application note

    Abstract: FT50M Dalsa
    Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2007 September 21 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FT50M FT50M 1024H BFR92 application note Dalsa

    FT50M

    Abstract: line follower sensor CCD IMAGE BFR92 application note Ir sensor pin details linear CCD 512 liquid float level optical sensor 76131 ccd image sensor frame transfer
    Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 April 29 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FT50M 1024H FT50M line follower sensor CCD IMAGE BFR92 application note Ir sensor pin details linear CCD 512 liquid float level optical sensor 76131 ccd image sensor frame transfer

    BFR92 application note

    Abstract: frame transfer
    Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Product specification DALSA Professional Imaging 2008 January 16 DALSA Professional Imaging Product Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FT50M FT50M 1024H BFR92 application note frame transfer

    XQ5VFX130T

    Abstract: XQ5VSX50T
    Text: 74 Virtex-5Q FPGA Data Sheet: DC and Switching Characteristics Product Specification DS714 v2.2 January 17, 2011 Virtex-5Q FPGA Electrical Characteristics Defense-grade Virtex -5Q FPGAs are available in -2I, -1I, and -1M (only FX70T and FX100T devices in -1M) speed


    Original     		PDF DS714 FX70T FX100T UG192, UG193, UG194, XQ5VFX130T XQ5VSX50T

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSORS DATA SHEET FT50M 1M Frame Transfer CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 November 28 DALSA Professional Imaging Preliminary Specification Frame Transfer CCD Image Sensor • 1/2-inch optical format • 1M active pixels 1024H x 1024V


    Original     		PDF FT50M FT50M 1024H

    100-PIN

    Abstract: GVT71256ZC36 GVT71512ZC18
    Text: ADVANCE INFORMATION GVT71512ZC36/GVT71A24ZC18 512K X 36/1M X 18 ZBL SRAM GALVANTECH, INC. SYNCHRONOUS ZBL SRAM PIPELINED OUTPUT 512K x 36 SRAM 1M x 18 SRAM +3.3V SUPPLY, +3.3V or +2.5V I/O FEATURES GENERAL DESCRIPTION • The GVT71512ZC36 and GVT71A24ZC18 SRAMs are


    Original     		PDF GVT71512ZC36/GVT71A24ZC18 36/1M GVT71512ZC36 GVT71A24ZC18 288x36 576x18 71512ZC36 71A24ZC18 100-PIN GVT71256ZC36 GVT71512ZC18

    tdb 117

    Abstract: CY7C1471V33 CY7C1473V33 CY7C1475V33
    Text: CY7C1471V33 CY7C1473V33 CY7C1475V33 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency, no dead cycles between Write and Read cycles • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O


    Original     		PDF CY7C1471V33 CY7C1473V33 CY7C1475V33 36/4M 18/1M 133-MHz 36/4M 18/1M 150-MHz tdb 117 CY7C1471V33 CY7C1473V33 CY7C1475V33

    CY7C1471V25

    Abstract: CY7C1473V25 CY7C1475V25
    Text: CY7C1471V25 CY7C1473V25 CY7C1475V25 PRELIMINARY 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O


    Original     		PDF CY7C1471V25 CY7C1473V25 CY7C1475V25 36/4M 18/1M 133-MHz 36/4M 18/1M 150-MHz CY7C1471V25 CY7C1473V25 CY7C1475V25

    Untitled

    Abstract: No abstract text available
    Text: CY7C1471V25 CY7C1473V25 CY7C1475V25 ADVANCE INFORMATION 2M x 36/4M x 18/1M x 72 Flow-through SRAM with NoBL Architecture Features • Zero Bus Latency™, no dead cycles between write and read • Supports 133-MHz bus operations • 2M x 36/4M × 18/1M × 72 common I/O


    Original     		PDF CY7C1471V25 CY7C1473V25 CY7C1475V25 36/4M 18/1M 133-MHz 36/4M 18/1M 150-MHz

    W964L6ABN

    Abstract: W964L6ABN80
    Text: W964L6ABN 1M WORD x 16 BIT LOW POWER PSEUDO SRAM Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W964L6ABN W964L6ABN W964L6ABN80

    toshiba M7

    Abstract: No abstract text available
    Text: TO SH IB A RN1112,RN1113 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R N 1 1m 1m 7 g uRN111 m u -m u m m u m u 'm u Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • 1.6 ± 0.2 0.8 ±0.1


    OCR Scan     		PDF RN1112 RN1113 RN111 RN2112, RN2113 RN1112fRN1113 RN1112 toshiba M7

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CNY17-2,CNY17-3,CNY17-4 TOSHIBA PHOTOCOUPLER r N v Y• 1■ 7« - 3 m g T GaAs IRED & PHOTO-TRANSISTOR N 7 - ^ m 'm Ym 1m m mm g T N m Ym 1m m7 - d m AC LINE/DIGITAL LOGIC ISOLATOR DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER TWISTED PAIR LINE RECEIVER


    OCR Scan     		PDF CNY17-2 CNY17-3 CNY17-4 CNY17-2 CNY17-3

    motorola surface mount marking code

    Abstract: motorola diode marking code MU diode MARKING CODE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diodes M 1M A 151W KT1 M 1M A 152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59


    OCR Scan     		PDF SC-59 M1MA151/2WKT1 inch/3000 M1MA151/2WKT3 inch/10 M1MA151WKT1 M1MA152WKT1 100S1 151WK motorola surface mount marking code motorola diode marking code MU diode MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: TA7712P/F TO SH IB A TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC Tm mAm7m 7m 1m 3 P g Tm mAm7m 7m 1m 3 F • ■ 3 PHASE BI-DIRECTIONAL FOR MOTOR CONTROL IC FEATURES • FG is not required. System for obtaining rotation signal through position


    OCR Scan     		PDF TA7712P/F DIP20-P-300-2 SSOP24-P-300-1 360Hz

    marking code k4t

    Abstract: A151W Q0040 A152W
    Text: MOTOROLA Order this document by M1MA151WKT1/D SEMICONDUCTOR TECHNICAL DATA Common C athode Silicon Dual S w itching Diodes M 1M A151W KT1 M 1M A152W KT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59


    OCR Scan     		PDF M1MA151WKT1/D SC-59 M1MA151/2WKT1 inch/3000 M1MA151/2WKT3 inch/10 A151W A152W 1MA151W marking code k4t Q0040

    Untitled

    Abstract: No abstract text available
    Text: September 1990 Editor 2.0 FUJITSU DATA SHEET MB82B001-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B001 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher


    OCR Scan     		PDF MB82B001-25/-35 MB82B001 MB82B001-25 MB82B001-35 C-28P-M C280S5S-1C

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp


    OCR Scan     		PDF LH6N10/LH6N11 LH6N10/11 128KX8) LH6N10 LH6N11 LH6N10/LH6N11 100ns 32-pin