LE25FW106T
Abstract: LE25FW106M le25fw LE25FW106
Text: Preliminary Specifications CMOS LSI LE25FW106M LE25FW106T 1M-bit 128K x 8 Serial Flash Memory • Outline LE25FW106 is 128K x 8-bit Serial flash memory by 3.0V single power supply operation, and support serial peripheral interface (S.P.I.). There are three kinds of erase functions, Chip erase, Sector (32 K bytes) erase and small sector (2K
|
Original
|
LE25FW106M
LE25FW106T
LE25FW106
30us/byte
256bytes,
le25fw
|
PDF
|
LE25FW106T
Abstract: LE25FW106 flash eeprom sop8
Text: Preliminary Specifications CMOS LSI LE25FW106M LE25FW106T 1M-bit 128K x 8 Serial Flash Memory • Outline LE25FW106 is 128K x 8-bit Serial flash memory by 3.0V single power supply operation, and support serial peripheral interface (S.P.I.). There are three kinds of erase functions, Chip erase, Sector (32 K bytes) erase and small sector (2K
|
Original
|
LE25FW106M
LE25FW106T
LE25FW106
30us/byte
256bytes,
flash eeprom sop8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Specifications CMOS LSI LE25FW106M LE25FW106T 1M-bit 128K x 8 Serial Flash Memory • Outline LE25FW106 is 128K x 8-bit Serial flash memory by 3.0V single power supply operation, and support serial peripheral interface (S.P.I.). There are three kinds of erase functions, Chip erase, Sector (32 K bytes) erase and small sector (2K
|
Original
|
LE25FW106M
LE25FW106T
LE25FW106
30us/byte,
256bytes,
|
PDF
|
MX29F8100
Abstract: No abstract text available
Text: PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
|
Original
|
MX29F8100
8/512K
bytes/64
100uA
120/150ns
44SOP
MAR/08/1999
PM0262
MX29F8100
|
PDF
|
29F8100-12
Abstract: MX29F8100 MXIC flash disk controller
Text: INDEX PRELIMINARY MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY FEATURES • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance : 10,000 cycles Fast access time: 120/150ns Sector erase architecture - 8 equal sectors of 128k bytes each
|
Original
|
MX29F8100
8/512K
120/150ns
PM0262
29F8100-12
MX29F8100
MXIC flash disk controller
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each
|
Original
|
MX29F1610
16M-BIT
100/120ns
150ms
PM0260
|
PDF
|
2K600
Abstract: EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4 ic at89c51 20 pin at89c2051 ic ECLP07 ATMEL PRODUCT GUIDE 20 pin plcc ic base E2PROM pin configuration of ic AT89c51 C51 Family
Text: Atmel Product Guide AVR Enhanced RISC Microcontroller Part Number AT90S1300 AT90S2312 AT90S8414 Memory Size 1K x 8 2K x 8 8K x 8 Description AVR Microcontroller with 1K bytes Flash and 128-bytes EEPROM AVR Microcontroller with 2K bytes Flash and 128-bytes EEPROM
|
Original
|
AT90S1300
AT90S2312
AT90S8414
128-bytes
256-bytes
AT89C51
AT89LV51
AT89C52
AT89LV52
2K600
EEPROM 16k, 32k, 64k, 128k, 256k, 512k, 1m, 2m, 4
ic at89c51
20 pin at89c2051 ic
ECLP07
ATMEL PRODUCT GUIDE
20 pin plcc ic base
E2PROM
pin configuration of ic AT89c51
C51 Family
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24Gxxx-3A (128K 256K 1M) General Description BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and
|
Original
|
BR24Gxxx-3A
BR24Gxxx-3A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24Gxxx-3A (128K 256K 1M) General Description BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and
|
Original
|
BR24Gxxx-3A
BR24Gxxx-3A
|
PDF
|
4G12A
Abstract: No abstract text available
Text: Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM 2-Wire BR24Gxxx-3A (128K 256K 1M) General Description BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock(SCL) and
|
Original
|
BR24Gxxx-3A
BR24Gxxx-3A
4G12A
|
PDF
|
BR24G256FJ
Abstract: 4G12A 4G25
Text: High Reliability Serial EEPROMs I2C BUS BR24xxxxfamily BR24Gxxx-3A Series 128K 256K 1M ●Packages W(Typ.) x D(Typ.)x H(Max.) ●General Description 2 BR24Gxxx-3A series is a serial EEPROM of I C BUS interface method ●Features All controls available by 2 ports of serial clock(SCL) and
|
Original
|
BR24xxxxfamily
BR24Gxxx-3A
BR24G256FJ
4G12A
4G25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability.
|
OCR Scan
|
HN58V1001
128-Byte
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN58C1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58C1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58C1001 is capable of in-system electrical Byte and Page reprogrammability.
|
OCR Scan
|
HN58C1001
128-Byte
|
PDF
|
HN58C1001P-12
Abstract: HN58C1001FP-15 TFP-32DAR HN58C1001FP-12
Text: HN58C1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58C1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58C1001 is capable of in-system electrical Byte and Page reprogrammability.
|
OCR Scan
|
HN58C1001
128-Byte
daC1001
HN58C1001P-12
HN58C1001FP-15
TFP-32DAR
HN58C1001FP-12
|
PDF
|
|
|
HN58V1001
Abstract: DP-32 HN58V1001FP-25 HN58V1001P-25 HN58V1001R-25 HN58V1001T-25 03CZ Hitachi Scans-001
Text: HN58V1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability. For applications where
|
OCR Scan
|
HN58V1001
128-Byte
DP-32
HN58V1001FP-25
HN58V1001P-25
HN58V1001R-25
HN58V1001T-25
03CZ
Hitachi Scans-001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN28F101 Series Preliminary 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is capable of in-system electrical chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
|
PDF
|
ZXXXM
Abstract: HNS8V1001
Text: HIN58V1001 Series Prelim inary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58V1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58V1001 is capable of in-system electrical Byte and Page reprogrammability. For applications where
|
OCR Scan
|
HIN58V1001
HN58V1001
128-Byte
ZXXXM
HNS8V1001
|
PDF
|
TAE 1102
Abstract: HN28F101 HN28F101P-12 HN28F101P-15
Text: HN28F101 Series Preliminary 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is capable of in-system e lectrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
GD2S113
TAE 1102
HN28F101P-12
HN28F101P-15
|
PDF
|
CP-32
Abstract: DP-32 HN28F101
Text: HN28F101 Series Preliminary 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le of in-system ele ctrica l chip era sure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
CP-32
DP-32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN28F101 Seríes 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Flash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le of in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-Megabit CMOS Fiash Memory organized as 131,072 x 8-bit. The HN28F101 is cap ab le o f in -syste m e le ctrica l chip erasure and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HN58C1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTIO N The Hitachi HN58C1001 is a 1-M egabit CM O S Electrically Erasable Program m able Read O nly M em ory (EEPROM ) organized a s 131,072 x 8-bits. The HN58C1001 is capable o f in-system electrical Byte and Page reprogram m ability.
|
OCR Scan
|
HN58C1001
128-Byte
44Tb203
002574b
|
PDF
|
TDS-01
Abstract: 0DL4
Text: HITACHI/ L O G I C / ARRAYS/HEH SIE II • M> ‘ib203 0 0 1 7 > m 201 ■ HIT2 HN58C1001 Series Preliminary 1M 128K x 8-bit) EEPROM B DESCRIPTION The Hitachi HN58C1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized
|
OCR Scan
|
MM1b203
HN58C1001
128-Byte
TDS-01
0DL4
|
PDF
|
CP3220
Abstract: No abstract text available
Text: HN28F101 Series 1M 128K x 8-bit Flash Memory • DESCRIPTION The Hitachi HN28F101 is a 1-M egabit CM OS Flash M em ory organized as 131,072 x 8-bit. The HN28F101 is c a p a b le o f in -s y s te m e le c tric a l c h ip e ra s u re and reprogramming. The HN28F101 programs and erases data with a 12 V
|
OCR Scan
|
HN28F101
HN28F101:
CP3220
|
PDF
|
