Untitled
Abstract: No abstract text available
Text: 1111 IIII11111 111 111 111 111111 111 11111111111 !1111111 i !)11111 111 111 f11 11 ! III11! 11 i11 ]11 M 11 111 1III11 11 III1 1I1 1IIIII 4-Bit, 4-Port Bus Switch Product Features: Product Description: • Zero propagation delay Pericom Semiconductor’s PI5C series of logic circuits are pro
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I11111
PI5C3400
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4156 amp
Abstract: 741 OP Amp application integrator summing amplifier
Text: bME D • 7ST73tiD D D D A A E 5 bOl H R T N RAYTHEON/ SEMICONDUCTOR _ RC4156/RC4157 RC4156/RC4157 High Performance Quad Operational Amplifiers Description Features The 4156 and 4157 are monolithic integrated circuits, consisting of four independent high performance
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7ST73tiD
RC4156/RC4157
RC4156/RC4157
7ST73LÜ
4156 amp
741 OP Amp application integrator
summing amplifier
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BD-A514RD
Abstract: BD-A544RD BD-C514RD D2116 BGA503 ISO100
Text: D I S P L A Y DU A L DIGIT LED DISPLAYS Chip Part No. Digit Size y y 0.50“ IT 3 m 0.52" fn H y y 0.56" 0 Ü Common Anode Common Cathode E m itte d Color BG-A501RD BG-C501RD Red BG-A505RD BG-C505RD BG-A505RE BG-C505RE BG-A502RD BG-C502RD BG-A503RD BG-C503RD
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BG-A501RD
BG-A505RD
BG-A505RE
BG-A502RD
BG-A503RD
BG-A504RD
BG-A506RD
BD-A531RD
BD-A535RD
BD-A535RE
BD-A514RD
BD-A544RD
BD-C514RD
D2116
BGA503
ISO100
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KM736V787
Abstract: KM736V787-7 KM736V787-8 KM736V787-9 128KX36
Text: P R E LIM IN A R Y K M 736V 787 1 2 8 K x 3 6 S y n c h ro n o u s S R A M Document Title 128Kx36-Bit Synchronous Burst SRAM Revision H istory R ev.N o . History Draft Date 0.0 Initial dra ft M ay. 15. 1997 0.1 M o d ify po w e r dow n cycle tim in g S Interlea ved read tim ing ,
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KM736V787
128Kx36
128Kx36-Bit
100-TQFP-1420A
KM736V787
KM736V787-7
KM736V787-8
KM736V787-9
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Dh-37
Abstract: No abstract text available
Text: M OSEL VI TEL IC V53C364805A 3.3 VOLT 8 M X 8 ED O P A G E M O D E CM O S DYNAM IC R A M V53C364805A 40 50 60 Max. RAS Access Tim e, tp^c 40 ns 50 ns 60 ns Max. Column Address Access Time, ( t c ^ ) 20 ns 25 ns 30 ns Min. EDO Page Mode Cycle Time, (tpc)
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V53C364805A
V53C364805A
cycles/128
32-pin
Dh-37
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B49A
Abstract: TSI S 14001
Text: TOSHIBA THMR1E16E-6/-7/-8 TENTATIVE T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-W ORD BY 18-BIT 256M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMRIË16E is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of
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R1E16
728-WORD
18-BIT
18-bit
TC59RM718MB
TC59M718RB
128M-word
B49A
TSI S 14001
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KM736V790
Abstract: No abstract text available
Text: P R E LIM IN A R Y 128Kx36 Synchronous SRAM KM 736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History R ev.N o . H istory Draft Date 0.0 Initia l d ra ft D e ce m b e r. 15. 1997 0.1 C h a n g e s p e e d s y m b o l 6 .0 /6 .7 /7 .5 /8 .5 to 6 0 /6 7 /7 5 /8 5 ,
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KM736V790
128Kx36
128Kx36-Bit
100-TQFP-1420A
KM736V790
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