Untitled
Abstract: No abstract text available
Text: Plug-In PBTC-1GW+ PBTC-1GW Bias-Tee Wideband 0.1 to 1000 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power Features • wideband, 0.1 to 1000 MHz • low insertion loss, 0.3 dB typ. • hermetic, metal case
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30dBm
500mA
2002/95/EC)
100mA
200mA
M98898
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Untitled
Abstract: No abstract text available
Text: Plug-In PBTC-1GW+ PBTC-1GW Bias-Tee Wideband 0.1 to 1000 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power • wideband, 0.1 to 1000 MHz • low insertion loss, 0.3 dB typ. • hermetic, metal case
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30dBm
500mA
2002/95/EC)
resistanc08
100mA
200mA
100mA
M98898
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1GW 45
Abstract: 1gw 16
Text: Plug-In PBTC-1GW+ PBTC-1GW Bias-Tee 50Ω Wideband 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
2002/95/EC)
100mA
200mA
1GW 45
1gw 16
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1GW NPN
Abstract: 1FW ST 1FW 07 1FW transistor marking 1gw marking 1FW 1FW npn 1fw 02 1FW marking BC847CW
Text: BC847BW BC847CW SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC847BW 1FW BC847CW 1GW SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARY
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BC847BW
BC847CW
OT-323
BC847BW
BC857BW
OT-323
1GW NPN
1FW ST
1FW 07
1FW transistor
marking 1gw
marking 1FW
1FW npn
1fw 02
1FW marking
BC847CW
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PBTC-1GW
Abstract: 1gw transistor
Text: Bias Tee , Plug In PBTC-1GW+ Typical Performance Curves Insertion Loss Isolation 5 0.4 10 0.6 15 Isolation dB 0.2 0.8 1.0 Insertion Loss @0mA 1.2 Insertion Loss @20mA Insertion Loss @50mA 1.4 Isolation @10mA Isolation @20mA Isolation @50mA Isolation @100mA
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100mA
150mA
200mA
PBTC-1GW
1gw transistor
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1GW 45
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω Wideband Maximum Ratings PBTC-1GW+ 0.1 to 1000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port 4.5 ohm typ.
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30dBm
500mA
1GW 45
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1gw 82
Abstract: PBTC-1GW diode 1gw
Text: Plug-In Bias-Tee 50Ω PBTC-1GW+ Wideband 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
2002/95/EC)
1gw 82
PBTC-1GW
diode 1gw
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Untitled
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω PBTC-1GW+ Wideband 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
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1gw 82
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω PBTC-1GW+ Wideband 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
2002/95/EC)
1gw 82
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Untitled
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω PBTC-1GW+ Wideband 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
100mA
200mA
100mA
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Untitled
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω Wideband PBTC-1GW+ 0.1 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port
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30dBm
500mA
2002/95/EC)
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: Plug-In Bias-Tee 50Ω Wideband Maximum Ratings PBTC-1GW+ 0.1 to 1000 MHz Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 30dBm max. Voltage at DC port 30V max. Input Current 500mA DC resistance from DC to RF&DC port 4.5 ohm typ.
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30dBm
500mA
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Untitled
Abstract: No abstract text available
Text: High Temperature Radial Lead Encapsulated A range of Radial Leaded Capacitors available in sizes 1515 to 7565 designed to operate from -55ºC to 200ºC in C0G NP0 & Class II dielectrics. Voltage ratings of 25V to 500V. These capacitors find typical application in very harsh environments
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100WF
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Untitled
Abstract: No abstract text available
Text: High Temperature Radial Lead Epoxy Coated A range of Radial Leaded Capacitors available in sizes 1515 to 7565 designed to operate from -55ºC to 200ºC in C0G NP0 & Class II dielectrics with voltage ratings of 25V to 4kV. These capacitors find typical application in harsh environments such as
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26RATURE
100WF
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Untitled
Abstract: No abstract text available
Text: Certified Safety Capacitors X2, Y3 & X1, Y2 X2, Y3 LS style and X1, Y2 (ES style) Class Compliant* chip capacitors specifically designed for use in modem, facsimile, telephone and other electronic equipment where lightning or overvoltage surges can occur. Both styles are rated at 250 Vac
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1994/A2:
1998/IEC60384-14,
1993/A1
IEC60384-14,
EN61000-4-5,
IEC10004-5
IEC801-4-5.
RF0505
RF1111
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high voltage
Abstract: 1gW 38 SRH10 1GW 64
Text: PRECISION HIGH VOLTAGE/ HIGH VALUE CHIP RESISTORS SRH SERIES RoHS RESISTORSCAPACITORSCOILSDELAY LINES Term.W is RoHS compliant r Industry’s highest precision hi-voltage SM resistors! r Voltage ratings up to 7KV, resistance values to 1TW 1012W
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25ppm/
SRH1206
SRH2512
SRH4020S
SRH5020
SRH7020
SRH1020
100GW,
100KW,
100MW,
high voltage
1gW 38
SRH10
1GW 64
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7712
Abstract: EN61010-1 EN61326-1 EN-61326-1
Text: • 3.5GHz bandwidth • Dual 1x4 configuration • Onboard switch closure counter • Onboard S parameter storage Ordering Information 7712 3.5GHz 50W RF Module 0dB –1dB –2dB –3dB –4dB 10 The Model 7712 plug-in module offers a 50, dual 14 multiplexer configuration with rear panel
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7712-SMA-1
7712-SMA-N
S46-SMA-0
S46-SMA-1
7712-3Y-EW
7712
EN61010-1
EN61326-1
EN-61326-1
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sma connector panel
Abstract: EN61010-1 EN61326-1
Text: 2GHz 50W RF Module 7711 • Signal routing performance to 2GHz • Switches up to 60VDC Use with Integra Series mainframes: 2700, 2701, 2750 • Rear panel SMA connections • Onboard switch closure counter • Onboard S parameter storage Ordering Information
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60VDC
7712-SMA-1
7712-SMA-N
S46-SMA-0
S46-SMA-1
7711-3Y-EW
sma connector panel
EN61010-1
EN61326-1
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high temperature chip
Abstract: No abstract text available
Text: High Temperature Chip A range of chip capacitors, available in sizes 0805 to 7565, designed to operate from -55°C to 150°C, Class 2 dielectric and from -55ºC to 200ºC (C0G & Class II dielectrics). Voltage ratings of 25V to 4kV. l For dielectric characteristics see pages 4 & 7.
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000pF.
150oC
RF0505
RF1111
RF2525
high temperature chip
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Thin Profile Chip
Abstract: Thin Profile
Text: Thin Profile Chip Ultra thin profile chips available in C0G, X7R, Z5U and Y5V dielectrics, and three maximum thicknesses of 0.015”, 0.018” and 0.020”. These devices find application as decoupling capacitors mounted underneath other circuit elements where
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50Vdc.
RF0505
RF1111
RF2525
Thin Profile Chip
Thin Profile
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Untitled
Abstract: No abstract text available
Text: Commercial Axial Lead 50V to 2kV RoHS compliant Axial Leaded Capacitors available in C0G, X7R and X8R dielectrics. Conformal coating and lead mounting provide a rugged configuration for optimum performance, with high capacitance efficiency per KV rating. Units exhibit
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EIA-RS468,
01-500V:
100GW
1000WF
100WF
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Untitled
Abstract: No abstract text available
Text: Thin Profile Chip Ultra thin profile chips available in C0G, X7R, Z5U and Y5V dielectrics, and three maximum thicknesses of 0.015”, 0.018” and 0.020”. These devices find application as decoupling capacitors mounted underneath other circuit elements where
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50Vdc.
RF0505
RF1111
RF2525
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Untitled
Abstract: No abstract text available
Text: SPEED/PACKAGE AVAILABILITY BLOCK DIAGRAM PIN CONFIGURATION TRUTH TABLE FUNCTION SECTION 1 SECTION 2 DESCRIPTION Write Address 1W0, 1W1, 1W2 2W/R0, 2W/R1, 2W/R2 Binary write address selects one of eight two-bit word locations. Write Enable 1GW 2GW When low, permits the writing of new data into the selected word
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OCR Scan
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2CW 45
Abstract: No abstract text available
Text: — 14 0 - 16-B it M ultiple-port Register File 3-State 74 1 7 2 OATA WRITE/READ WRITE INPUTS WRITE ADDRESS •■'< ' AODRES&— \ ENABLE/ . ■ VgC 10* 20A 2CW 2W/R2 2W/R1 2W/R0 2GR 1W2 10A 2DA 2GW 2W/R2 ?W/R 1WO 106 2OB 1GW 1R2 HO 2GR 1R1 IRQ 1W1 1W0, 1CW .100
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OCR Scan
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16-Bit
2CW 45
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