Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
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1gm transistor
Abstract: 1GM sot-23 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA06
MMBTA56
100mA
100mA,
100MHz
1gm transistor
1GM sot-23 transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0% 4. f T is defined as the freguency at which hfeextrapolates to unity
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MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G FEATURES • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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LMBTA05WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05WT1G LMBTA06WT1G S-LMBTA05WT1G S-LMBTA06WT1G • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05WT1G
LMBTA06WT1G
S-LMBTA05WT1G
S-LMBTA06WT1G
AEC-Q101
LMBTA05
LMBTA06
LMBTA05WT1G
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Marking 1GM
Abstract: marking 1h LMBTA06WT1G 1GM x
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05WT1G LMBTA06WT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. MAXIMUM RATINGS Rating 1 Symbol Value LMBTA05 LMBTA06 2 Unit Collector–Emitter Voltage V CEO 60
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LMBTA05WT1G
LMBTA06WT1G
LMBTA05
LMBTA06
SC-70
3000/Tape
10000/Tape
LMBTA05W
Marking 1GM
marking 1h
LMBTA06WT1G
1GM x
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1GM H
Abstract: Marking 1GM 1GM 5 LMBTA05LT1G LMBTA06LT1G 1gm sot 23 marking 1h 1gm marking
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • We declare that the material of product 3 compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage V CEO 60
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
LMBTA05LT1G
OT-23
1GM H
Marking 1GM
1GM 5
LMBTA06LT1G
1gm sot 23
marking 1h
1gm marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBTA06LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.5 A ICM: Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
MMBTA06LT1
OT-23
100mA
100MHz
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors LMBTA05LT1G LMBTA06LT1G FEATURES • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol Value LMBTA05 LMBTA06 Unit Collector–Emitter Voltage
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LMBTA05LT1G
LMBTA06LT1G
LMBTA05
LMBTA06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5
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OT-23
MMBTA06LT1
100MHz
037TPY
950TPY
550REF
022REF
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x-ray film illuminator
Abstract: 2WAY dashpot damping 751168
Text: Issued March 1997 232-4184 Data Pack G Dashpot dampers Data Sheet RS stock numbers 751-146, 751-152, 751-168, 751-174, 751-180, 751-196, 751-203 Applications ● Prevent damage to sensitive equipment from shock and vibration ● Reduce impact noise ● Damping extreme movements
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MMBTA05LT1G
Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage
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MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
MMBTA05LT1G
1GM sot-23
MMBTA05
MMBTA05LT1
MMBTA05LT3
MMBTA05LT3G
MMBTA06
MMBTA06LT1G
MMBTA06LT3
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Untitled
Abstract: No abstract text available
Text: CENTRAL SEMICONDUCTOR 1 • . . n a “n t . 3 oqdd3 5 t CS92 SERIES v e -tl._ SILICON CONTROLLED RECTIFIER 0.8 AMPS £ . . i i^?efiSä5G&/'Gr €;GLVj. € e B B £ ü ’CSS §eRLi.ce@BieaK;eß@[i5e @ sp . 100 THRU 800 VOLTS JEDEC T0-92 CASE Central
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OCR Scan
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PDF
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T0-92
CS92A
100i2,
100fi,
30TYP
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40C120B
Abstract: 40C40B 40C60B 40C80B
Text: Silicon Controlled Rectifier Series 40C Dim In ch es Minimum A B C E F G H J K M N P R S Note 1: 1/4-28 UNF-3A Forward k Reverse Repetitive Blocking 1 .677 -1.200 .427 .115 - .200 .120 - .065 .145 .055 .025 .685 .770 1.250 .447 .155 .515 .249 .300 .667
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OCR Scan
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T0-208AC
40c20b
40C40B
40C60B
40C80B
40C120B
00V/usec.
f-120
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CS92A
Abstract: CS92B CS92D CS92M CS92N
Text: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue
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OCR Scan
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PDF
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0DDD32cÃ
T0-92
CS92A
CS92B
CS92D
100i2,
67xVDRM,
30TYP
CS92M
CS92N
CS92A
CS92D
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55C100B
Abstract: 55C100BF 55C120B 55C120BF 55C60B 55C60BF 55C80B 55C80BF
Text: Silicon Controlled Rectifier Series 55C Dim. Inches Minimum A B C D E F G H J K M N P R S T U V W X Y Z AA H 1 -*-1 3-1 TO-208AD T0-83 Ì TO-209AC (TO— 94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead,
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55C60B
55C60BF
55C80B
55C80BF
55C100B
55C100BF
55C120B
55C120BF
00V/usec.
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07102G0A
Abstract: 07104G0A 07105GOA 07106GOA
Text: Silicon Controlled Rectifier Series 071 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes 1 A B C E F G H J K 1.050 - 5.850 6.850 .797 .276 - M N P R TO—208AD TO-83 Note 1: 1/2 20 UNF-3A Note 2: Ful •ull thread within 2 1/2 threads Note 3: To specify package designation other than standard
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OCR Scan
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O-209AC
208AD
07102G0A
07104G0A
07105GOA
07106GOA
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2N3669
Abstract: scr 2n3668 2N3668 2N3670 2n4103 2n3668 datasheet
Text: Datasheet 2N3668 2N3669 2N3670 2 N 4 1 03 SILICON CONTR O L L ED REC TI FI E R 16 AMPS 220 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-3 CASE
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OCR Scan
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PDF
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2N3668
2N3669
2N3670
2N4103
2N3668,
2N3669,
2N3670,
2N4103
hermetica11
scr 2n3668
2n3668 datasheet
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SF3H42
Abstract: TOSHIBA THYRISTOR SF3H42LC2
Text: THYRISTOR SILICON DIFFUSED JUNCTION SF3H42 LC2 FOR AUT0-STR0B0 FLASHER APPLICATIONS. Unit in mm (Commutator Use) . Non-Repetitive Peak Off-State Voltage : V d s m = 600V . Critical Rate of Rise of On-State Current : di/dt=lOOOA/^s . Gate Trigger Current : 1g j =200(jA(Ma x .)
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SF3H42
TOSHIBA THYRISTOR
SF3H42LC2
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CQ92
Abstract: No abstract text available
Text: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE
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OCR Scan
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CQ92A
CQ92B
CQ92D
21o1s
CQ92
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2N1794-1804
Abstract: 6Cp 80 624A2 Microsemi Catalog 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371
Text: Silicon Controlled Rectifiers y 804: 2N4371 - 4 3 7 7 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes i— Î i 'i A B C D E F G H J K M N P R S T U r m i K t I i E D TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi
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O-208AD
2N4371
2N1794
2N4372
2N1795
2N1796
2N1797
2N4373
2N1798
2N1799
2N1794-1804
6Cp 80
624A2
Microsemi Catalog
2N1795
2N1796
2N1798
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