Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
MMBTA06
MMBTA56
|
PDF
|
1gm transistor
Abstract: 1GM sot-23 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
MMBTA06
MMBTA56
100mA
100mA,
100MHz
1gm transistor
1GM sot-23 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
|
Original
|
MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
|
PDF
|
1GM sot-23
Abstract: MMBTA05 MMBTA06
Text: MMBTA05 MMBTA06 Driver NPN 3 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM 3 MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 0.1 u 0.1 0.1 u 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%
|
Original
|
MMBTA05
MMBTA06
OT-23
MMBTA05
MMBTA06
1GM sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Driver Transistors FEATURES LMBTA05LT1G LMBTA06LT1G S-LMBTA05LT1G S-LMBTA06LT1G • We declare that the material of product • compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
|
Original
|
LMBTA05LT1G
LMBTA06LT1G
S-LMBTA05LT1G
S-LMBTA06LT1G
AEC-Q101
LMBTA05
LMBTA06
S-LMBTA05LT1G
|
PDF
|
100-6 SOT-23
Abstract: 1GM x
Text: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA05LT1 MMBTA06LT1 Collector −Base Voltage VCBO Collector Current − Continuous
|
Original
|
MMBTA05LT1,
MMBTA06LT1
MMBTA06LT1
MMBTA05LT1
OT-23
100-6 SOT-23
1GM x
|
PDF
|
SMMBTA06LT1G
Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
|
Original
|
MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
canada ices class b
Marking 1GM
MMBTA05
|
PDF
|
1gm transistor
Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Text: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is
|
Original
|
MMBTA06
OT-23
MMBTA56
OT-23
MPSA06.
100mA,
100mA
100MHz
01-Jun-2004
1gm transistor
1GM sot-23 transistor
marking code 1GM
1GM j
MMBTA06
MPSA06
|
PDF
|
MMBTA06
Abstract: No abstract text available
Text: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A
|
Original
|
MMBTA06
OT-23
MMBTA56
100mA
100mA,
100MHz
03-May-2012
MMBTA06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components Features • • • • • MMBTA05 THRU MMBTA06 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Halogen free available upon request by adding suffix "-HF"
|
Original
|
MMBTA05
MMBTA06
OT-23
MMBTA55/MMBTA56)
MMBTA06
|
PDF
|
DigRF
Abstract: N5343A DigRF v4 n534 N5344U CRC lte DIGRFv4 LTE RFIC
Text: Agilent RDX Test Solutions for DigRF N5343A DigRF Exerciser Module N5344A DigRF Analyzer Module Data Sheet • Easily debug and integrate your DigRF based RF-IC and BB-IC components • Get insight from bit level to IQ modulated RF signals • Get the greatest
|
Original
|
N5343A
N5344A
5989-9575EN
DigRF
DigRF v4
n534
N5344U
CRC lte
DIGRFv4
LTE RFIC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5
|
Original
|
OT-23
MMBTA06LT1
100MHz
037TPY
950TPY
550REF
022REF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type NPN General Purpose Transistor MMBTA05,MMBTA06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
|
Original
|
OT-23
MMBTA05
MMBTA06
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 通用三極管 General Purpose Transistors FHTA06R General Purpose Transistors 通用三極管 DESCRIPTION & FEATURES 概述及特點 Complementary to FHTA56R 與 FHTA56R 互補 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號
|
Original
|
FHTA56R
FHTA06R
OT-23
OT-23
hFE1FHTA06
100mA
|
PDF
|
|
|
1GM sot-23 transistor
Abstract: marking code 1GM sot23-6 marking code 601
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBTA06 Small Signal Transistors NPN SOT-23 FEATURES .122 (3.-H .118 (3.0) .016 (0.4) Top View ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBTA56 is recommended.
|
OCR Scan
|
MMBTA06
OT-23
MMBTA56
MPSA06.
OT-23
1GM sot-23 transistor
marking code 1GM
sot23-6 marking code 601
|
PDF
|
CQ92
Abstract: No abstract text available
Text: CENTRAL o.v,: ;• L: SEMICONDUCTOR o de ooocm? I v-f CQ92A CQ92B CQ92D CQ.92M feer- e^patpcto g MtuEG@5î&385@e&? (S r-E TRIAC 0.8 AMPS 100 T H R U 6 0 0 V O L T S Central Semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-92 CASE
|
OCR Scan
|
CQ92A
CQ92B
CQ92D
21o1s
CQ92
|
PDF
|
40C10
Abstract: 40C40B 40C60B 40C120B 40C20B 40C100B 40C80B
Text: Silicon Controlled Rectifier Series 40C Dim. Inches Minimum A B C D E F G H J K M N P R S Note 1: 1 /4 -2 8 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi Catalog Number 40C20B 40C40B 40C60B 40C80B 40C100B 40C120B M illim eter Maximum Minimum Maximum Notes
|
OCR Scan
|
208AC
40C20B
40C40B
40C60B
40C80B
40C100B
40C120B
40C10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Controlled Rectifier Series 051 Dim. Inches Minimum A B C D E F G H J K M N P R S Anode Gate —11— N Ü Cathode Note 1: 1 /4 -2 8 UNF-3A Note 2: Full thread within 2 1 /2 threads Microsemi Catalog Number 05102GOF 05104GOF 05106GOF 05108GOF 05110GOF
|
OCR Scan
|
T0-65)
00V/usec.
|
PDF
|
70C100B
Abstract: 70C100BF 70C120B 70C120BF 70C50B 70C50BF 70C60B 70C60BF 70C80B 70C80BF
Text: Silicon Controlled Rectifier Series 70C Dim Inches Minimum TO-208AD T0-83 A B C D E F G H J K M N P R S T U V W X Y Z AA TO-209AC (T0-94) Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1/2 threads Note 3: For insulated cathode lead, add suffix ”IL" to catalog number
|
OCR Scan
|
70C50B
70C50BF
70C60B
70C60BF
70C80B
70C80BF
70C100B
70C100BF
70C120B
70C120BF
|
PDF
|
15106GOA
Abstract: 15102G0A 15104G0A 15106G0A 15108G0A 15110G0A 15112G0A
Text: Silicon Controlled Rectifier Series 15 Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Z -Y r x " , v u t T T*=r ^ i i i H l TO-209AB T093 Notes: 1. 3/4-16 UNF-3A 2. Full thread within 2 1/2 threads 3. For insulated cathode lead, add suffix ”IL” to catalog number
|
OCR Scan
|
T0-209AB
24Instantaneous
15106GOA
15102G0A
15104G0A
15106G0A
15108G0A
15110G0A
15112G0A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Silicon Controlled Rectifiers 2N1794-1 804; 2N4371 - 4 5 7 7 Dim. Inches JJ Minimum ?= r c ^ 1 1 A B C D E F G H J K M N P R S T U “ 1 f . — ' ' ' I ’ Y f ï 1 rV - \A (TO-83 Note 1: 1/2-20 UNF-3A Note 2: Full thread within 2 1/2 threads Microsemi
|
OCR Scan
|
2N1794-1
2N4371
2N1794
2N1795
2N1796
2N1797
2N1798
2N1799
2N1800
2N1801
|
PDF
|
2N1794
Abstract: 2N1795 2N1796 2N1797 2N1798 2N1799 2N4371 2N4372 2N4373 2N4374
Text: Silicon Controlled Rectifiers 2N1 7 9 4 - 1 804; 2N4371 - 4 3 7 7 Dim. Inches c Minimum = 7 B I A B C D E F G H J K M N P R S T U 1jfk; a “1 ? 1/ JJ.-1 Ç T0-208AD TO-83 1 Note 1: 1 /2 -2 0 UNF-3A Note 2: Full thread within 2 1 /2 threads Microsemi Catalog Number
|
OCR Scan
|
2N4371
O-208AD
2N1794
2N4372
2N1795
2N1796
2N1797
100mA
00V/usec.
2N1795
2N1796
2N1798
2N1799
2N4373
2N4374
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA SM 16G45,SM 16J45#SM 16G45A#SM 16J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45, SM16J45, SM16G45A, SM16J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage R.M.S On-State Current High Commutating dv / dt
|
OCR Scan
|
16G45
16J45#
16G45A#
16J45A
SM16G45,
SM16J45,
SM16G45A,
SM16J45A
SM16G45
SM16G45A
|
PDF
|
CS92A
Abstract: CS92B CS92D CS92M CS92N
Text: CENTRAL SEMICONDUCTOR CS92 SERIES 1 ' . . V « -, . SILICON CONTROLLED RECTIFIER 0.8 AMPS l£. • t L:ceßB55 iSGÖ/C C iG LV i. ©BBSC’CSS §eGLeCe@Biä^eseß©p e@s’0 . Central Sem iconductor Corp. 100 THRU 800 VOLTS JEDEC TO-92 CASE 1 4 5 A dam s Avenue
|
OCR Scan
|
0DDD32cÃ
T0-92
CS92A
CS92B
CS92D
100i2,
67xVDRM,
30TYP
CS92M
CS92N
CS92A
CS92D
|
PDF
|
