HP4192A
Abstract: LMT3811 SGE2641-1G SGE2641-1GT SGE2641-1GTR 117 power transformer 1100VRMS SGE2641
Text: Specification Number SGE2641-1G Revision. A 082905 TM 6W LMT3811 47.2:1 Transformer DESCRIPTION This document describes and specifies the electrical and mechanical characteristics of the SGE2641-1G high voltage transformer for CCFL inverter power supplies. SGE2641-1G is the RoHS compliant and Lead free transformer. For Reliability and Safety Specification, refer to SGE2606-2.
|
Original
|
SGE2641-1G
LMT3811
SGE2641-1G
SGE2606-2.
10Khz,
100KHz,
2000pecification
HP4192A
SGE2641-1GT
SGE2641-1GTR
117 power transformer
1100VRMS
SGE2641
|
PDF
|
DDR2-667C
Abstract: PG-TFBGA-68 HYB18T
Text: November 2006 HYB18T 1G 400B F HYB18T 1G 800B F HYB18T 1G 160B F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.0 Internet Data Sheet HYB18T1Gxx0BF–[2.5F/…/5] 1-Gbit Double-Data-Rate-Two SDRAM HYB18T1G400BF, HYB18T1G800BF, HYB18T1G160BF
|
Original
|
HYB18T
HYB18T1Gxx0BF
HYB18T1G400BF,
HYB18T1G800BF,
HYB18T1G160BF
DDR2-667C
PG-TFBGA-68
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 204PIN DDR3 1333 SO-DIMM 1024MB With 128Mx8 CL9 JM1333KSU-1G Description Placement The JM1333KSU-1G is a 128M x 64bits DDR3-1333 SO-DIMM. The JM1333KSU-1G consists of 8pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board.
|
Original
|
204PIN
1024MB
128Mx8
JM1333KSU-1G
JM1333KSU-1G
64bits
DDR3-1333
128Mx8bits
204-pin
|
PDF
|
EDE1104AASE
Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized
|
Original
|
EDE1104AASE
EDE1108AASE
EDE1104AA
EDE1108AA
68-ball
M01E0107
E0404E10
EDE1104AASE
EDE1104AASE-4A-E
EDE1104AASE-5C-E
EDE1104AASE-6C-E
EDE1108AASE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: February 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB15T
HYB15T1G
11202007ce.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 JM667QLJ-1G Placement Description The JM667QLJ-1G is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
|
Original
|
240PIN
64Mx8
JM667QLJ-1G
JM667QLJ-1G
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 533 Unbuffered DIMM 1GB With 64Mx8 CL4 JM533QLJ-1G Placement Description The JM533QLJ-1G is a 128M x 64bits DDR2-533 Unbuffered DIMM. The JM533QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
|
Original
|
240PIN
64Mx8
JM533QLJ-1G
JM533QLJ-1G
64bits
DDR2-533
16pcs
64Mx8bits
240-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 667 SO-DIMM 1GB With 64Mx8 CL5 JM667QSJ-1G Description Placement The JM667QSJ-1G is a 128M x 64bits DDR2-667 SO-DIMM. The JM667QSJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed
|
Original
|
200PIN
64Mx8
JM667QSJ-1G
JM667QSJ-1G
64bits
DDR2-667
16pcs
64Mx8bits
200-pin
|
PDF
|
HYB18T1G800
Abstract: HYB18T1G400CFL-3S qimonda HYB18T1G160CF-3S HYB18T1G800CFL-3S
Text: November 2007 HYB18T 1G 400C F HYB18T 1G 800C F HYB18T 1G 160C F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.20 Date: 2007-11-23 Internet Data Sheet HYB18T1G[40/80/16]0CF L 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T
HYB18T1G
HYB18T1G400CFL-3S,
HYB18T1G400CFL-2
HYB18T1G800CFL-3S,
HYB18T1G800CFL-2
HYB18T1G160CFL-3S,
HYB18T1G160CFL-2
HYB18T1G800
HYB18T1G400CFL-3S
qimonda HYB18T1G160CF-3S
HYB18T1G800CFL-3S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 533 SO-DIMM 1GB With 64Mx8 CL4 JM533QSJ-1G Placement Description The JM533QSJ-1G is a 128M x 64bits DDR2-533 SO-DIMM. The JM533QSJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed
|
Original
|
200PIN
64Mx8
JM533QSJ-1G
JM533QSJ-1G
64bits
DDR2-533
16pcs
64Mx8bits
200-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 JM800QLJ-1G Placement Description The JM800QLJ-1G is a 128M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
|
Original
|
240PIN
64Mx8
JM800QLJ-1G
JM800QLJ-1G
64bits
DDR2-800
16pcs
64Mx8bits
240-pin
|
PDF
|
DDR2-667C
Abstract: No abstract text available
Text: August 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.51 Advance Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T
HYB18T1G
DDR2-667C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 0.72” 1GB With 64Mx8 CL5 JM667QLJ-1G Description Placement The JM667QLJ-1G is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
|
Original
|
240PIN
64Mx8
JM667QLJ-1G
JM667QLJ-1G
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 200PIN DDR2 667 SO-DIMM 1GB With 128Mx8 CL5 JM667QSU-1G Description Placement The JM667QSU-1G is a 128M x 64bits DDR2-667 SO-DIMM. The JM667QSU-1G consists of 8pcs 128Mx8 bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit
|
Original
|
200PIN
128Mx8
JM667QSU-1G
JM667QSU-1G
64bits
DDR2-667
128Mx8
200-pin
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 800 Unbuffered DIMM 0.72” 1GB With 128Mx8 CL6 JM800QLU-1G Description Placement The JM800QLU-1G is a 128M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLU-1G consists of 8 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit
|
Original
|
240PIN
128Mx8
JM800QLU-1G
JM800QLU-1G
64bits
DDR2-800
128Mx8bits
240-pin
|
PDF
|
DDR2-667C
Abstract: tls 106-6
Text: June 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.50 Advance Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM
|
Original
|
HYB18T
HYB18T1G
04212008-66HT-ZLFE
DDR2-667C
tls 106-6
|
PDF
|
DDR2-667C
Abstract: max5964
Text: October 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.00 Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.00, 2008-10
|
Original
|
HYB18T
HYB18T1G
DDR2-1066
DDR2-667C
max5964
|
PDF
|
SGE2606-4
Abstract: bifilar insulation HP4192A SGE2604-4 SGE2690-1G SGE2690-1GTR high voltage transformer
Text: Specification Number SGE2690-1G Revision. A 090605 TM 2.4W LMT2608 80.0:1 Transformer DESCRIPTION This document describes and specifies the electrical and mechanical characteristics of the SGE2690-1G high voltage transformer for CCFL inverter power supplies. SGE2690-1G is the RoHS compliant and Lead free transformer. For Reliability and Safety Specification, refer to SGE2606-4.
|
Original
|
SGE2690-1G
LMT2608
SGE2690-1G
SGE2606-4.
10Khz,
100KHz,
SGE2606-4
bifilar insulation
HP4192A
SGE2604-4
SGE2690-1GTR
high voltage transformer
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Specification Number SGE2690-1G Revision. A 090605 TM 2.4W LMT2608 80.0:1 Transformer This document describes and specifies the electrical and mechanical characteristics of the SGE2690-1G high voltage transformer for CCFL inverter power supplies. SGE2690-1G is the RoHS compliant and Lead free transformer. For Reliability and Safety Specification, refer to SGE2606-4.
|
Original
|
SGE2690-1G
LMT2608
SGE2690-1G
SGE2606-4.
HP4192A
30mVrms)
1500VRMS
60sec)
|
PDF
|
DDR2-667C
Abstract: No abstract text available
Text: November 2008 HYB18T 1G 400C 4 F HYB18T 1G 800C 4 F HYB18T 1G 160C 4 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.01 Internet Data Sheet HYB18T1G[40/80/16]0C4F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.01, 2008-11
|
Original
|
HYB18T
HYB18T1G
DDR2-1066
DDR2-667C
|
PDF
|
HP4192A
Abstract: SGE2604-4 SGE2671-1G SGE2671-1GTR
Text: Specification Number SGE2671-1G Revision. A 090605 TM 2.4W LMT2608 50.0:1 Transformer DESCRIPTION This document describes and specifies the electrical and mechanical characteristics of the SGE2671-1G high voltage transformer for CCFL inverter power supplies. SGE2671-1G is the RoHS compliant and Lead free transformer. For Reliability and Safety Specification, refer to SGE2606-4.
|
Original
|
SGE2671-1G
LMT2608
SGE2671-1G
SGE2606-4.
10Khz,
100KHz,
HP4192A
SGE2604-4
SGE2671-1GTR
|
PDF
|
EDE1108AASE
Abstract: EDE1108AASE-5C-E EDE1108AASE-6E-E EDE1104AASE EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6E-E
Text: DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AASE is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AASE is a 1G bits DDR2 SDRAM organized as 16,777,216 words × 8 bits × 8 banks.
|
Original
|
EDE1104AASE
EDE1108AASE
EDE1104AASE
EDE1108AASE
68-ball
M01E0107
E0404E20
EDE1108AASE-5C-E
EDE1108AASE-6E-E
EDE1104AASE-4A-E
EDE1104AASE-5C-E
EDE1104AASE-6E-E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: August 2008 HYB15T 1G 400C 2 F HYB15T 1G 800C 2 F HYB15T 1G 160C 2 F 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM EU RoHS Compliant Products Internet Data Sheet Rev. 1.00 Internet Data Sheet HYB15T1G[40/80/16]0C2F 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.00, 2008-08
|
Original
|
HYB15T
HYB15T1G
|
PDF
|
physical transformer
Abstract: SGE2668-1G SGE2604-4 SGE2668-1GTR high voltage transformer
Text: Specification Number SGE2668-1G Revision. A 051106 TM 2.4W LMT2608 80.0:1 Transformer DESCRIPTION This document describes and specifies the electrical and mechanical characteristics of the SGE2668-1G high voltage transformer for CCFL inverter power supplies. SGE2668-1G is the RoHS compliant and Lead free transformer. For Reliability and Safety Specification, refer to SGE2606-4.
|
Original
|
SGE2668-1G
LMT2608
SGE2668-1G
SGE2606-4.
10Khz,
100KHz,
physical transformer
SGE2604-4
SGE2668-1GTR
high voltage transformer
|
PDF
|
