IS95A
Abstract: IS-95A AP501 AP501-PCB JESD22-A114
Text: AP501 The Communications Edge TM PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage
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AP501
AP501
IS-95A
JESD22-A114
JESD22-C101
1-800-WJ1-4401
IS95A
AP501-PCB
JESD22-A114
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95a 324
Abstract: 1fa MARKING IS95A aclr ip3
Text: AP501 PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 32.5 dB gain, while being able to
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AP501
IS-95A
AP501
JESD22-A114
JESD22-C101
1-800-WJ1-4401
95a 324
1fa MARKING
IS95A
aclr ip3
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2218 8 PIN DIP
Abstract: S1365 marking 4fa 1fa MARKING
Text: SAW Bandpass Filter 251952B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD 2. Package Dimension 13.30±0.2 7.62±0.1 8 9 10 11 6 ITF 07A001
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251952B
07A001
S1365
NM7031-CS01
2218 8 PIN DIP
S1365
marking 4fa
1fa MARKING
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Untitled
Abstract: No abstract text available
Text: AP503 DCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1805 – 1880 MHz Functional Diagram The AP503 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 31.5 dB gain. The module has been
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AP503
AP503
CDMA2000
JESD22-A114
JESD22-C101
1-800-WJ1-4401
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AP504
Abstract: AP504-PCB DCS1800 JESD22-A114
Text: AP504 DCS-band 4W HBT Amplifier Module Product Features Product Description Functional Diagram The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 31.5 dB gain. The module has been
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AP504
AP504
CDMA2000
JESD22-A114
JESD22-C101
1-800-WJ1-4401
AP504-PCB
DCS1800
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: AP504 DCS-band 4W HBT Amplifier Module Product Features Product Description • 1705 – 1790 MHz Functional Diagram The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 31.5 dB gain. The module has been
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AP504
AP504
CDMA2000
JESD22-A114
JESD22-C101
1-800-WJ1-4401
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AP503
Abstract: AP503-PCB DCS1800 JESD22-A114
Text: AP503 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1805 – 1880 MHz Functional Diagram The AP503 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage
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AP503
AP503
CDMA2000
JESD22-A114
JESD22-C101
1-800-WJ1-4401
AP503-PCB
DCS1800
JESD22-A114
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LT1124
Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 strain gauge amplifier 102 RN60C
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/
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LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
LT1124
LT1124C
LT1125C
OP-270
strain gauge amplifier 102
RN60C
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LT1124
Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 RN60C SN1124
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/
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LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
LT1124
LT1124C
LT1125C
OP-270
RN60C
SN1124
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AP504
Abstract: AP504-PCB DCS1800 JESD22-A114
Text: AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1705 – 1790 MHz Functional Diagram The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage
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AP504
AP504
CDMA2000
JESD22-A114
JESD22-C101
1-800-WJ1-4401
AP504-PCB
DCS1800
JESD22-A114
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R7730
Abstract: No abstract text available
Text: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
R7730
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Untitled
Abstract: No abstract text available
Text: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
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LT1124
Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 strain gauge amplifier 102 RN60C L3540
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps FEATURES DESCRIPTION n The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/ OP-470 op amps. In addition, the LT1124/LT1125 have
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LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
LT1124
LT1124C
LT1125C
OP-270
strain gauge amplifier 102
RN60C
L3540
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AP502
Abstract: AP502-PCB JESD22-A114 Class AB AMPLIFIER 4W AP-502 r7730
Text: AP502 The Communications Edge TM UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable
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AP502
AP502
JESD22-A114
JESD22-C101
1-800-WJ1-4401
AP502-PCB
JESD22-A114
Class AB AMPLIFIER 4W
AP-502
r7730
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OP270
Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 RN60C 1fa MARKING
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
85nV/Hz
OP270
LT1124
LT1124C
LT1125C
OP-270
RN60C
1fa MARKING
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RN60C
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
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112dB
116dB
LT1124/LT1125
LT1125
OP-27
OP270/
OP-470
OP-27;
OP-270/OP-470.
RN60C
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Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Description Features 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-470
LT1124/LT1125
OP-27;
250pA
LT1113
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Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max
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LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-271112/LT1114
250pA
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Untitled
Abstract: No abstract text available
Text: 19-4981; Rev 3; 8/12 TION KIT EVALUA BLE AVAILA Low-Power, Low-Offset, Dual Mode, Class H DirectDrive Headphone Amplifier The MAX97200 is a 45mW Class H headphone amplifier that runs from a single low 1.8V supply voltage and employs Maxim’s second-generation DirectDrive technology.
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MAX97200
MAX97200
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1SS154
Abstract: SC-59 marking 1F 1fa MARKING AI500
Text: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF-S BAND MIXER /D ET ECT OR APPLICATIONS. U n i t in m m + 0.5 . Small Package MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 6 V Forward Current If 30 mA Junction Temperature
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1SS154
1SS154
SC-59 marking 1F
1fa MARKING
AI500
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1fa MARKING
Abstract: No abstract text available
Text: TO SH IB A RN2510,RN2511 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS S 1m H g uR m uN 'm 7 wmr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. mR « N • w 7 R h t 1■ 1■ Unit in mm + 0.2 2.8-0.3 Including Two Devices In SMV (Super Mini Type with 5 Leads)
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RN2510
RN2511
RN1510--RN1511
RN2511
RN2510
1fa MARKING
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TRANSISTOR MARK NB
Abstract: 82J marking 1fa MARKING
Text: SEM ICONDUCTOR KRC821F-KRC824F TECHNI CAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • With Built-in Bias Resistors. • Simplify Circuit Design. DIM • Reduce a Quantity o f Parts and Manufacturing Process.
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KRC821F-KRC824F
KRC821F
KRC822F
KRC823F
RC824F
KRC824F
C824F
TRANSISTOR MARK NB
82J marking
1fa MARKING
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2SK2836
Abstract: No abstract text available
Text: TO SH IBA 2SK2836 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2836 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance
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2SK2836
2SK2836
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Untitled
Abstract: No abstract text available
Text: rrw rn _ LT1124/LT1125 TECHNOLOGY D u a l/Q u a d Low Noise, High Speed Precision O p Am ps F€flTUR€S • 100% Tested Low Voltage Noise: 2.7nV/VHz Typ 4.2nV/VHz Max ■ Slew Rate: 4.5V/|as Typ ■ Gain Bandwidth Product: 12.5MHzTyp ■ Offset Voltage, Prime Grade: 70|iV Max
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LT1124/LT1125
112dB
116dB
C12/LT1114
250pA
LT1113
10fA/VHz
LT1126/LT1127
LT1169
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