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    1F900 Search Results

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    1F900 Price and Stock

    Ohmite Mfg Co 41F900E

    1W 900 OHMS SILICONE 1%
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    DigiKey 41F900E 1
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    41F900E Box 250
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    Mouser Electronics 41F900E 1
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    Master Electronics 41F900E 205
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    Delta Electronics Inc HCME1211F-900

    IND SMD 90NH ASSEMBLY CHOKE
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    DigiKey HCME1211F-900 Cut Tape 1
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    HCME1211F-900 Reel 400
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    Nextgen Components CMC21F900MT04A

    CMC21 0.4A 90 ohm
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    Sensata Circuit Breakers IEG1-1REC4-61F-9.00-01-V

    CIR BRKR MAG-HYDR LEVER 9A
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    Sager IEG1-1REC4-61F-9.00-01-V 1
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    Sensata Circuit Breakers IELXK1-1REC4-51F-90.0-03-V

    CIR BRKR MAG-HYDR LEVER 90A
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    1F900 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


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    PDF W19B320AT/B w19b320

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


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    PDF W28J320B/T 16/4M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


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    PDF W28F321BT/TT 32MBIT W28F321, W28F321

    LHF00L14

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


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    PDF LHF00L14 LHF00L14) EL163055 LHF00L14

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    PDF 3582B AT49BV322D AT49BV322DT AT49BV

    FY520

    Abstract: FW533 MT28F322D18
    Text: ADVANCE 2 MEG x 16 BURST FLASH MEMORY FLASH MEMORY MT28F322D18FH Low Voltage, Extended Temperature FEATURES • Flexible dual-bank architecture* – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa


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    PDF MT28F322D18FH 100ns MT28F322D18FH FY520 FW533 MT28F322D18

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


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    PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    AT26DF161A-SSU

    Abstract: AT26DF161A AT26DF161A-MU AT26DF161A-SU
    Text: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks


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    PDF 32-Kbyte 64-Kbyte AT26DF161A-SSU AT26DF161A AT26DF161A-MU AT26DF161A-SU

    4kw marking

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V


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    PDF DS05-50308-2E MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 59-ball MB84VD22280FA/80FE/90FA/90FE F0311 4kw marking

    FPT-48P-M19

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V


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    PDF DS05-20904-2E MBM29DL32TF/BF-70 MBM29DL32TF/BF MBM29DL32TF/BF F0305 FPT-48P-M19

    SA70

    Abstract: 2SA31
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES


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    PDF DS05-50212-3E MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 71-ball F0111 SA70 2SA31

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


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    PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    mx29lv320ttc

    Abstract: MX29LV320T Q0-Q15 SA10
    Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention


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    PDF MX29LV320T/B 32M-BIT 200nA 10-year 64K-Byte FEB/10/2003 MAR/26/2003 APR/23/2003 JUL/04/2003 mx29lv320ttc MX29LV320T Q0-Q15 SA10

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard


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    PDF F49L320UA/F49L320BA 304x8 152x16 9s/11s

    SA70

    Abstract: 18FFFFH
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V


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    PDF DS05-50204-2E MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 73-ball MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 SA70 18FFFFH

    micron memory sram

    Abstract: micron sram MT28C3214P2FL MT28C3214P2NFL FW431
    Text: 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3214P2FL MT28C3214P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no


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    PDF MT28C3214P2FL MT28C3214P2NFL 66-Ball 32K-word 256K-words MT28C3214P2FL micron memory sram micron sram MT28C3214P2NFL FW431

    micron memory

    Abstract: micron memory sram micron sram SRAM ID REading MT28C3224P18 MT28C3224P20
    Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3224P20 MT28C3224P18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture


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    PDF MT28C3224P20 MT28C3224P18 66-Ball 32K-word 256K-words MT28C3224P20 micron memory micron memory sram micron sram SRAM ID REading MT28C3224P18

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION


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    PDF IS71VPCF32XS04 73-ball CF32ES04-8570BI IS71VPCF32FS04-8570BI IS71VPCF32AS04-8585BI IS71VPCF32BS04-8585BI IS71VPCF32CS04-8585BI

    Intel Stacked CSP

    Abstract: transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160
    Text: 3 Volt Intel Advanced+ Stacked Chip Scale Package Memory 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Preliminary Datasheet Product Features • ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity Stacked Chip Scale Package Technology


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    PDF 28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3 Intel Stacked CSP transistor a018 28F1602C3 28F1604C3 28F3204C3 28F3208C3 29066 28f160

    MT28C3212P2FL

    Abstract: MT28C3212P2NFL FX433 FY442
    Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no


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    PDF MT28C3212P2FL MT28C3212P2NFL 66-Ball 32K-word 128K-words MT28C3212P2FL MT28C3212P2NFL FX433 FY442

    DL322

    Abstract: DL323 DL324
    Text: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features


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    PDF Am41DL32x4G 16-Bit) 8-Bit/256 73-Ball FLB073--73-Ball DL322 DL323 DL324