MARKING 1F2
Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
Text: ESDA18-1F2 ASD Application Specific Devices TRANSIL : Transient Voltage Suppressor FEATURES AND BENEFITS: • ■ ■ ■ ■ Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm DESCRIPTION
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ESDA18-1F2
ESDA18-1F2
IEC61000-4-2
MARKING 1F2
STMicroelectronics DIODE marking code EE
transil diode
DIODE 76A
AN1235
st Diode marking EE
1F2 Diode
STMicroelectronics DIODE marking code
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12a2
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1F1 – 1F7 1A 1A FAST RECOVERY DIODES TYPE Maximum Peak Reverse Voltage Maximum Average Maximum Rectified Current Forward Peak @ Half-Wave Surge Current @ Resistive Load 60Hz 8.3ms Superimposed PRV I O@ T L V PK 1F1 1F2 1F3 1F4
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st Diode marking EE
Abstract: MARKING 1F2 AN1235 AN1751 ESDA18-1F2 JESD97
Text: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards
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ESDA18-1F2
ESDA18-1F2
st Diode marking EE
MARKING 1F2
AN1235
AN1751
JESD97
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transil diode equivalent
Abstract: No abstract text available
Text: ESDA18-1F2 Transil , transient voltage suppressor Features • Stand-off voltage 16V ■ Unidirectional device ■ Low clamping factor VCL/VBR ■ Fast response time ■ Very thin package: 0.65 mm Flip Chip 4 bumps Complies with the following standards
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ESDA18-1F2
ESDA18-1F2
transil diode equivalent
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FP100R12KT4
Abstract: 2f k
Text: Technische Information / technical information FP100R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FP100R12KT4
2f k
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Untitled
Abstract: No abstract text available
Text: www.eicsemi.com 1F1 ~ 1F7 FAST RECOVERY DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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UL94V-O
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: 1F1 ~ 1F7 FAST RECOVERY DIODES R-1 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.099 (2.51) 0.95 (2.42) High current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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UL94V-O
MIL-STD-202,
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Schottky Diode 40V 2A
Abstract: NEC schottky diode product List CRG16GT TEMSVB21c106m8r Schottky Diode B29 capacitor 0.2uf 50v GRM39F103Z50PT TEMSVB21 RK73K1JTD 1a4 capacitor
Text: µ PD72872 Reference Design Document Number: SSG-Z-140 • The information in this document is current as of December, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
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PD72872
SSG-Z-140
GRM39F105Z10PT
TEMSVB21A226M8R
TEMSVB21C106M8R
TESVD21A226M12R
GHM1525B472K250
SLF10145T-471MR47
DSX630G24R576MHZ
NFM4516P13C204F
Schottky Diode 40V 2A
NEC schottky diode product List
CRG16GT
TEMSVB21c106m8r
Schottky Diode B29
capacitor 0.2uf 50v
GRM39F103Z50PT
TEMSVB21
RK73K1JTD
1a4 capacitor
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A-405
Abstract: Code marking 1F1
Text: LESHAN RADIO COMPANY, LTD. 1F1 thru 1F7 1 Feature & Dimensions Fast Recovery Rectifiers * Plastic package has Underwriters Laboratory * * * * * * * * Reverse Voltage 50 to 1000V Forward Current 1.0A Flammability Classification 94V-0 High temperature metallurgically bonded construction
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MIL-S-19500
DO-201AD
DO-41
DO-15
26/tape
DO-201AD
52/tape
52/tape#
A-405
Code marking 1F1
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MH12210
Abstract: CR2354 equivalent VARTA cr2 CR2330 equivalent discharge curve CR123A RESIN PVC SE 1300 MT920 CR17345 Panasonic BR-C CR1620 equivalent
Text: International English Lithium Batteries Technical Handbook 2000 PDF File Technical Handbook Copyright 2000 Matsushita Battery Industrial Co., Ltd. All rights Reserved. No part of this technical handbook pdf file may be changed, altered, reproduced in any form or by any means without the prior written permission of
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BC555
Abstract: D556 68z10
Text: IHW40N60R IH-series Reverse conducting IGBT C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior
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IHW40N60R
J-STD-020
JESD-022
12345647556889A8BA6C
BC555
D556
68z10
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tunnel diode
Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Text: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise
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fdlL-s-19500/269
SEMfC0NDUCT05f
1N3719,
1N3715,
1N3717,
1N3719
1N3721
1NS71
KSL-S-1950CV269
MIL-s-19500/269
tunnel diode
lm719
IN3717
tunnel diode application
1N3717
1N2719
TUNNEL DIODE d 220
1N3713
1N3715
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM1F Unit in mm inch • tt s OUTLINE DRAWING • m L & G B u i S > * - > u K«ii Direction of polarity ■FEATURES ¿0.6 (0.024) • For high speed sw itch ing. • Diffused-junction. Resin encapsulated. ■* Type Color of cathode band, symbol
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DO-41
Abstract: IN 4741 do41 in 4740 in 4744 in 4751 in4744 IN4746 IN4743 IN4733
Text: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T-Ol-Ol J SILICON DIODES SEM ICONDUCTORS e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN /IN /IN „ IN
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02blb4fl
DO-41
DO-41
IN 4741
do41
in 4740
in 4744
in 4751
in4744
IN4746
IN4743
IN4733
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Untitled
Abstract: No abstract text available
Text: I \ l E C HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER 4 DESCRIPTION FEATURES PS2806-1 and PS2806-4 are optically coupled isolators con taining a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor in a plastic SOP Small
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PS2806-1
PS2806-4
PS2806-1-F3,
PS2806-4-F3
PS2806-1,
PS2806-4
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white noise Generator 1GHz
Abstract: noise diode "alpha" PACKAGE OUTLINE
Text: ALPHA IND/ S E M I C O N D U C T O R MAE D • D S Ô S M M 3 D G 0 1 3 b 0 ST T ■ ALP Noise Diodes 7 01-ZJ FEATURES ■ ■ ■ ■ ■ ■ ■ ■ White noise generator from 1MHz to 18GHz Passivated MESA fabrication for highest reliability Available in chip form, and various metal
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18GHz
01-ZJ
-144dBm/Hz]
white noise Generator 1GHz
noise diode
"alpha" PACKAGE OUTLINE
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER IO R 73 D | MflSSMSa □0071ÖM i f T'-¿>/' 2'3 Data Sheet No. PD-2.134 In t e r n a t i o n a l , r e c t i f i e r R23D & R23DR SERIES 600 - 400 VOLTS RANGE 350 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS
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R23DR
D0-205AB
R23DGR4A.
4fl55452
00071flfl
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schematic diagram motor control dc 12v
Abstract: L2724
Text: Aspect Development, Inc. During QA it was found that pages within this section are missing from the original source document. These pages are not available from the manufacturer at this time. Aspect Development, Inc. apologizes for any inconvenience. Please contact VIP Customer Support at 603 880-3764x25 or the
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880-3764x25
L2720/2/4
L2722
S71l8@
schematic diagram motor control dc 12v
L2724
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LB1631
Abstract: LB1631M fdd motor driver
Text: SANYO SEMICONDUCTOR CORP Ï Ë E lT | 7 TT 7 □ ? h DD0 3 3 7 4 - S Z a I - 2,5- LB1631M M o n o lith ic D fg itaf IC 3097 26 3 3 Low-Saturation Bidirectional Motor Driver for Low-Voltage Applications The LB1631M is a dual low-saturation bidirectional motor driver IC for use in
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DD03374
LB1631M
LB1631M
400mA)
800mA)
tf00T3
200mA
400mA
400mA,
LB1631
fdd motor driver
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diode byt 45
Abstract: BYT 45 J 8 dip smps circuits diode byt 45 J 100CC 25CC BYT 12 DIODE smps rectifier fast recovery diode 8 dip smps ic 2B100L
Text: / = T SGS-THOMSON ^ 7 # ü Llg¥liQ *S BYT 30PI-600/800 FAST RECOVERY RECTIFIER DIODES • ■ ■ ■ ■ HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED : Capacitance 15pF Insulating voltage 2500 V rms
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30PI-600/800
30P1-1000
diode byt 45
BYT 45 J
8 dip smps circuits
diode byt 45 J
100CC
25CC
BYT 12 DIODE
smps rectifier fast recovery diode
8 dip smps ic
2B100L
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11F2
Abstract: No abstract text available
Text: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.
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H11F1,
H11F2,
H11F3
11F2
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Untitled
Abstract: No abstract text available
Text: r HEWLETT PACKARD a 940iji70> DUAL LOW INPUT HCPL-2730 CURRENT, HIGH GAIN HCPL-2731 OPTOCOUPLERS * o u t l in e d r a w in g SC HEM A TIC 9.90 1.390» Ri i? ì f?i fsl HP x x x x * Y Y W W ft TYPE NUMBFR D A T f CODE 6 10 < 240) 7 36 29 0 ) 6-60 I 260)
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HCPL-2730
HCPL-2731
940iji70>
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AC243
Abstract: TC74AC373
Text: TC74AC373P/F/FW, TC74AC533P/F/FW O CTAL D - T Y P E LATCH WITH 3-STATE O UTPUT N O N -IN V ER E R TIN G TC74AC373P/F/FW INVERTING TC74AC533P/F/FW The TC74AC373 and TC74AC533 are advanced high speed CMOS OCTAL LATCH with 3-ST A T E OUTPUT fabricated with silicon gate and d o u b le -lay er m etal
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TC74AC373P/F/FW,
TC74AC533P/F/FW
TC74AC373P/F/FW
TC74AC373
TC74AC533
AC-243
AC243
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE ASSEMBLIED RECTIFIERS rs j ^ âs- '/ifL I f - PLASTIC MATERIAL USED CARRIES UL 94V-0 OPERATINGAND STORAGE TEMPERATURE RANGE : -20°C to+135'C JUUiipj'HS.&S TYPE M axim um Peak Reverse Voltage S.A.isLitjsS^SSL PRV M axim um Average Rectified Current
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HVP10
HVP12
HVP14
HVP15
HVP16
DO-201
DO-41
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