LH28F160S3NS-L10
Abstract: LHF16KA1
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3NS-L10 Flash Memory 16M 2M x 8/1M × 16 (Model No.: LHF16KA1) Issue Date: March 16, 2001 sharp LHF16KA1 ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3NS-L10
LHF16KA1)
LHF16KA1
LH28F160S3NS-L10
LHF16KA1
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LH28F160S3HNS-L10A
Abstract: LHF16KAU
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S3HNS-L10A Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KAU) Spec No.: EL138074 Issue Date: September 5, 2001 sharp LHF16KAU ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S3HNS-L10A
LHF16KAU)
EL138074
LHF16KAU
LH28F160S3HNS-L10A
LHF16KAU
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56-PIN
Abstract: LH28F008SA LH28F016SA
Text: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate
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LH28F016SA
56-PIN
LH28F008SA
J63428
SMT96112
LH28F008SA
LH28F016SA
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DT28F016SA
Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Text: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate
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28F016SA
16-MBIT
56-Lead,
28F008SA
16-MbF016SA,
28F016SV,
28F016XS,
28F016XD
DT28F016SA
DD28F032SA
28F008SA
28F016SV
28F032SA
28F008SA-Compatible
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28F008SA
Abstract: LH28F016SCR-L95
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCR-L95 Flash Memory 16M 2MB x 8 (Model No.: LHF16C18) Spec No.: EL104171 Issue Date: September 30, 1998 sharp LHF16C18 ●Handle this document carefully for it contains material protected by international
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LH28F016SCR-L95
LHF16C18)
EL104171
LHF16C18
28F008SA
LH28F016SCR-L95
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TSOP056-P-1420
Abstract: LH28F160S5X-L70 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
Text: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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LH28F160S5-L/S5H-L
LH28F160S5-L/S5H-L
FBGA064-P-0811)
SDIP064-P-0750)
TSOP056-P-1420
LH28F160S5X-L70
LH28F160S5H-L70
LH28F160S5-L
LH28F160S5-L70
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LH28F160S5HNS-L70
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160S5HNS-L70 Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF16KZ6) Spec No.: EL103110B Issue Date: November 30, 1998 sharp LHF16KZ6 ●Handle this document carefully for it contains material protected by international copyright
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LH28F160S5HNS-L70
LHF16KZ6)
EL103110B
LHF16KZ6
LH28F160S5HNS-L70
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LH28F160S3HB-L10A
Abstract: No abstract text available
Text: Date 16M x8/x16 Flash Memory LH28F160S3HB-L10A Jun. 18. 2001 LHF16KA8 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express
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x8/x16)
LH28F160S3HB-L10A
LHF16KA8
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F160S3HB-L10A
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vhdl code for multiplexer 16 to 1 using 4 to 1
Abstract: 0528 BUS ARCHITECTURE OF MICROPROCESSOR 68000 R 2.8 no pinout 4 vhdl code 32 bit processor 68000 28F008SA 28F016SA 28F016SV 28F032SA
Text: E ADVANCE INFORMATION 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY SmartVoltage Technology User-Selectable 3.3V or 5V VCC User-Selectable 5V or 12V VPP Backwards-Compatible with 28F016SA, 28F008SA Command Set 65 ns Access Time Multiple Command Execution
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
E28F016SV
E28F106SV
vhdl code for multiplexer 16 to 1 using 4 to 1
0528
BUS ARCHITECTURE OF MICROPROCESSOR 68000
R 2.8 no pinout 4
vhdl code 32 bit processor 68000
28F016SA
28F016SV
28F032SA
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CSP-64
Abstract: TSOP056-P-1420 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
Text: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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LH28F160S5-L/S5H-L
LH28F160S5-L/S5H-L
CSP-64
TSOP056-P-1420
LH28F160S5H-L70
LH28F160S5-L
LH28F160S5-L70
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28F008SA
Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA NS480
Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block
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32-MBIT
DD28F032SA
56-Lead,
28F016SA
DD28F032SA
28F008SA
AP-377
16-Mbit
28F016SA,
28F016SA
28F320J5
28F640J5
NS480
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Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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block diagram automatic college bell
Abstract: 29059 B686 AP-625
Text: PRODUCT PREVIEW 28F016SC/28F016SC-L 16-MBIT 2 MB x 8 SmartVoltage FlashFile MEMORY SmartVoltage Technology — 2.7V Vcc (28F016SC-L Read-only) — 3.3V or 5V Vcc High-Density Symmetrically-Blocked Architecture — Thirty-two 64-Kbyte Erasable Blocks — 3.3V, 5V, o r1 2 V V p p
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28F016SC/28F016SC-L
16-MBIT
28F016SC-L
64-Kbyte
block diagram automatic college bell
29059
B686
AP-625
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WF1M32-XXX
Abstract: No abstract text available
Text: VZÀ WF2M32-XXX M/HITE /V IICROELECTRONICS 2M x3212V FLASH MODULE PRELIMINARY * FEATURES • Access Tim es of 9 0 ,1 0 0 ,1 2 0 nS ■ 12 Volt Programming. 5V ±10% Supply. ■ Packaging: ■ Low Power CMOS, 8mA Standby Typical • 66-pin, PGA Type, 1.385 inch square, Herm etic Ceramic
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WF2M32-XXX
x3212V
WF2M32-XH2X
WF2M32-XG4TX
66-pin,
WF1M32-XXX
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DD28F032SA
Abstract: No abstract text available
Text: REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or xt6 Operation ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ 1 Million Typical Erase Cycles per Block ■ 56-Lead, 1.2 x 14 x 20 mm Advanced
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32-MBIT
DD28F032SA
56-Lead,
28F016SA
DD28F032SA
16-Mbit
28F008SA
AP-377
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DT28F016SV080
Abstract: No abstract text available
Text: in t e i 16-MBIT Flash File MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • Sm artVoltage Techn o logy — U ser-Selectab le 3.3 V or 5 V V c c — U ser-Selectab le 5 V or 12 V V PP ■ Backw ards-Com patible with 28F016SA ,
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16-MBIT
28F016SV
56-Lead
28F016SA
28F008SA
AP-610
AB-62
DT28F016SV080
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Untitled
Abstract: No abstract text available
Text: SHARP J a n .1998 FLASH MEMORYÌ LH28F016SANS-70 Ver.1.1 V_ J SHARP CORPORATION Flash Memory Engineering Department 2 Memory Engineering Center Tenri Integrated C irc u its Development 1C Group SHARP L HF 1 6 S Z B 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8)
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LH28F016SANS-70
LH28F016SANS-70
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Untitled
Abstract: No abstract text available
Text: SHARP SPEC No. I SSUE: May 15 1996 To ; SPECIFICATIONS Product Type 1 6M F l a s h F i l e M e m o r y L H 2 8 F 0 1 6 S U T —1 0 Mo d e l N o . _ L H F 1 6 S 1 1 _ ^ T h is s p e c if ic a tio n s c o n ta in s 44 pages in c lu d in g th e cover and appendix.
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LHF16S11
260eC
TSOP56-P-1420
AAI115
P56-142Ö
CV734
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Untitled
Abstract: No abstract text available
Text: SHARP SHARP LHF16C09 •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. •When using the products covered herein, please observe the conditions written herein
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LHF16C09
37TYP
LH28F016SCN-L95
OP44-P-600
AA1050
CV570
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Untitled
Abstract: No abstract text available
Text: 16M 1M x 16/2M x 8 Flash Memory FEATURES DESCRIPTION • User-Selectable 3.3 V or 5 V VCc SHARP’S LH 28F016SA16M Flash Memory is a revo lutionary architecture which enables the design of truly mobile, high-performance, personal computing and communication products. With innovative capabilities,
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16/2M
56-Lead,
LH28F008SA
28F016SA16M
LH28F016SA
56-Lead
LH28F016SA
56-pin
LH28F016SAT-70
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5050H
Abstract: No abstract text available
Text: F t a u c r StaFiCO TiO NS m Integrated Circuits &oup ID245P01 32M B FJaán M em or/ C a id H od e l N o D 245P01 Spec No. : U 807001 Issue Dat e: J i ^ 8 , 1 9 9 8 SHARP I D 2 4 5 P 0 1 O Handle this document carefully for it contains material protected by international copyright law. Any repro
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ID245P01
245P01)
5050H
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Untitled
Abstract: No abstract text available
Text: in te i SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or x16 Operation _ ^ ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ Revolutionary Architecture
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32-MBIT
DD28F032SA
28F016SA
56-Lead,
DD28F032SA
16-Mbit
28F016SA,
28F016SV,
28F016XS,
28F016XD
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phase controller L120
Abstract: T40 16 ultrasonic IL200 marking code Iay 28F008SA LH28F016SCN-L95
Text: SHARP LHF16C09 1 CONTENTS PA G E PA G E 1.0 INTRO DUCTIO N. 3 5.0 D ESIG N C O N SID ERA TIO N S. 23 1.1 New Features. 3 1.2 Product Overview. 3
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LHF16C09
OP44-P-600
AA1050
G0231bfi
CV570
phase controller L120
T40 16 ultrasonic
IL200
marking code Iay
28F008SA
LH28F016SCN-L95
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