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    Amphenol Cables on Demand Q-1T01F0003048I

    CBL ASSY MCX-NTYPE PLUG-JACK 4'
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    DigiKey Q-1T01F0003048I Bag 100 1
    • 1 $70.63
    • 10 $70.63
    • 100 $66.55
    • 1000 $65.19
    • 10000 $65.19
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    Amphenol Cables on Demand Q-1U01F0003012I

    CBL ASSY MCX-NTYPE PLUG-JACK 12"
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    DigiKey Q-1U01F0003012I Bag 100 1
    • 1 $99.65
    • 10 $99.65
    • 100 $93.99
    • 1000 $92.1
    • 10000 $92.1
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    Amphenol Cables on Demand Q-2001F0003072I

    CBL ASSY MCX-NTYPE PLUG-JACK 6'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Q-2001F0003072I Bag 100 1
    • 1 $61.47
    • 10 $61.47
    • 100 $57.89
    • 1000 $56.69
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    Amphenol Cables on Demand Q-2001F0003108I

    CBL ASSY MCX-NTYPE PLUG-JACK 9'
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    DigiKey Q-2001F0003108I Bag 100 1
    • 1 $65.86
    • 10 $65.86
    • 100 $62.02
    • 1000 $60.74
    • 10000 $60.74
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    Amphenol Cables on Demand Q-2001F0005003M

    CBL ASSY MCX-NTYPE PLG-JACK 9.8'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey Q-2001F0005003M Bag 100 1
    • 1 $74.22
    • 10 $74.22
    • 100 $59.38
    • 1000 $55.67
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    Find more 1F000 price and stock on Findchips.com

    1F000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1F000000-A004-F

    Abstract: EMC APPLICATION
    Text: SPECIFICATIONS FUTURE BUS CONNECTOR 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A004-F Plating Spec. 0:120u" Min Cu Undrtplating Over All


    Original     		PDF 1F000000-A004-F 24pos) 1F000000-A004-F EMC APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: FUTURE BUS CONNECTOR SPECIFICATIONS 1F Series Shield Cover for Future Bus Connector EMC Application Physical Shield Cover: Zinc Ally Spring: Phosphor Bronze DRAWING ORDERING I NF OR MATI ON PRODUCT NO.: 1F000000-A002-F Plating Spec. 0:120u" Min Cu Undrtplating Over All


    Original     		PDF 1F000000-A002-F

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


    Original     		PDF MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		PDF MX25L1673E PM1912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    msc 1697

    Abstract: el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431 DSP56300
    Text: MOTOROLA Order this document by: DSP56302/D SEMICONDUCTOR TECHNICAL DATA DSP56302 Advance Information 24-BIT DIGITAL SIGNAL PROCESSOR 3 SCI Interface Program RAM 20480 x 24 or X Data Y Data Program RAM RAM RAM 19456 × 24 and × × 24 7168 24 7168 Instruction


    Original     		PDF DSP56302/D DSP56302 24-BIT DSP56302 DSP56300 msc 1697 el 198 Response AA0482 mz 1540 switching supply pcr 606 r hasp bb a Nippon capacitors TRANSISTOR MOTOROLA MAC 223 WL 431

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    XC56303PV80

    Abstract: pcr1a XC56303PV66 DSP56000 DSP56300 DSP56303 HA10 msc 1697 XC56303GC100 MCE Semiconductor
    Text: MOTOROLA Order this document by: DSP56303/D SEMICONDUCTOR TECHNICAL DATA DSP56303 Advance Information 24-BIT GENERAL PURPOSE DIGITAL SIGNAL PROCESSOR The DSP56303 is a member of the DSP56300 core family of programmable CMOS Digital Signal Processors DSPs . This family uses a high performance, single-clock-cycle-per-instruction


    Original     		PDF DSP56303/D DSP56303 24-BIT DSP56303 DSP56300 DSP56000 DSP56300 XC56303PV80 pcr1a XC56303PV66 HA10 msc 1697 XC56303GC100 MCE Semiconductor

    TE28F640J3C-120

    Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
    Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective


    Original     		PDF 28F128J3, 28F640J3, 28F320J3 x8/x16) 32-Byte 128-bit --64-bit High-Densi8/x16 56-Lead TE28F640J3C-120 TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3


    Original     		PDF W28J320B/T 16/4M

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data DSP56311 Rev. 8, 2/2005 DSP56311 24-Bit Digital Signal Processor 3 16 6 6 Memory Expansion Area EFCOP Peripheral Expansion Area Address Generation Unit Six Channel DMA Unit X Data RAM 48 K x 24 bits YAB XAB PAB DAB Y Data


    Original     		PDF DSP56311 24-Bit 24-Bit DSP56300

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    JESD94

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S25FL116K 16-Mbit S25FL116K JESD94

    S25FL116K

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S25FL116K 16-Mbit S25FL116K

    th50vsf1400

    Abstract: BA30
    Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory


    OCR Scan     		PDF 50VSF1400/1401ACXB TH50VSF1400/1401ACXB 152-bit 216-bit 48-pin 50VSF1400/1401 th50vsf1400 BA30