1F TRANSISTOR Search Results

1F TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

1F TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SILICON TRANSISTOR F N 1F 4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FE A TU R ES PACKAGE DIMENSIONS • Resistors Built-in TYPE in mHlimeters R 1 = 22 kf2 R2 = 47 k£7 r2 • ¿e Complementary to F A 1F 4N A B SO LUTE M A X IM U M R A TIN G S	OCR Scan		PDF
B 660 TG Abstract: No abstract text available Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS	OCR Scan	BC847 BC849 BC846 BC848 BC850 BC848B BC846A BC846B BC848C BC849B B 660 TG	PDF
bc847at Abstract: No abstract text available Text: BC847AT/BT/CT SOT-523 Transistor NPN SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters)	Original	BC847AT/BT/CT OT-523 OT-523 BC847AT BC847BT BC847CT	PDF
bc847b Abstract: BC847C marking 1F BC847B, BC847C bc847cs Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPES ARE	Original	BC847B BC847C BC857B BC857C OT-23 BC847C marking 1F BC847B, BC847C bc847cs	PDF
BC847B Abstract: BC847C 149L BC857B Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B	Original	BC847B BC847C OT-23 BC847B BC857B OT-23 BC847C 149L BC857B	PDF
SMD Transistor 1f Abstract: MARKING 1F transistor marking 1f CMBT5550 Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration	Original	ISO/TS16949 OT-23 CMBT5550 C-120 SMD Transistor 1f MARKING 1F transistor marking 1f CMBT5550	PDF
BA1F4M Abstract: No abstract text available Text: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.	OCR Scan	100mA BA1F4M	PDF
BC847B Abstract: BC847C BC847B, BC847C BC847B-1F BC857B Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY	Original	BC847B BC847C OT-23 BC847B BC857B OT-23 BC847C BC847B, BC847C BC847B-1F BC857B	PDF
transistor marking 1f Abstract: CMBT5550 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm	Original	OT-23 CMBT5550 C-120 transistor marking 1f CMBT5550	PDF
smd transistor marking BL Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE	Original	OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL smd transistor marking 1E smd transistor .1G CSC2712 ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23	PDF
smd TRANSISTOR 1D Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G	Original	BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h	PDF
smd transistor marking BL Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F	Original	OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL	PDF
marking 1E Abstract: BC848 Text: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847A 1E BC847B 1F BC848A 1J BC848B 1K 2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENTS ARE RESPECTIVELY	Original	BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 marking 1E BC848	PDF
transistor smd marking PE Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G	Original	BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b	PDF

gilbert cell mixer Abstract: murata SFG455A3 455KHz ceramic filter Text: Philips Semiconductors RF Communications Products Product specification Low-voltage mixer FM IF system SA676 DESCRIPTION FEATURES The SA676 is a low-voltage monolithic FM 1F system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers,	OCR Scan	SA676 SA676 20-pin gilbert cell mixer murata SFG455A3 455KHz ceramic filter	PDF
equivalent transistor smd 3 em 7 Abstract: CMBT5550 ts 4141 TRANSISTOR Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR	Original	OT-23 CMBT5550 C-120 equivalent transistor smd 3 em 7 CMBT5550 ts 4141 TRANSISTOR	PDF
BC850 SOT23 Abstract: No abstract text available Text: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C	OCR Scan	BC846A-Z1A BC846B-1B BC847A-Z1E BC847B-1F BC847C-1GZ BC848A-1JZ BC848B-1K BC848C-Z1L BC849B-2B BC849C-2C BC850 SOT23	PDF
ts 4141 TRANSISTOR smd Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE	Original	CSC2712 OT-23 CSC2712Y CSC2712GR CSC2712BL C-120 ts 4141 TRANSISTOR smd	PDF
BC847 Abstract: BC847B BC857 Text: BC847 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847B 1F SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENT IS BC857 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM	Original	BC847 BC847B BC857 OT-23 OT-23 0044616/B BC847 BC847B BC857	PDF
Untitled Abstract: No abstract text available Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857	OCR Scan	BC847 BC857 OT-23 OT-23	PDF
b45 sot23 Abstract: No abstract text available Text: BC847 BC848 r i 7 SGS-THOMSON m 7# KaO B©SILECTI3 raC©i SMALL SIGNAL NPN TRANSISTORS Type M arking BC847A 1E BC847B 1F BC848A 1J BC848B 1K . SILICON EPITAXIAL PLANAR NPN TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS	OCR Scan	BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 b45 sot23	PDF
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR	Original	OT-23 CMBT5550 C-120	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA R N 11 10F#R N 111 1F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110F, RN1111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN1110F, RN1111F RN2110F, RN2111F RN1110F RN1111F	PDF
GES5819 Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30	OCR Scan	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55	PDF

1F TRANSISTOR Search Results

1F TRANSISTOR Result Highlights (5)

1F TRANSISTOR Datasheets Context Search

Untitled

B 660 TG

bc847at

bc847b

BC847B

SMD Transistor 1f

BA1F4M

BC847B

transistor marking 1f

smd transistor marking BL

smd TRANSISTOR 1D

smd transistor marking BL

marking 1E

transistor smd marking PE

gilbert cell mixer

equivalent transistor smd 3 em 7

BC850 SOT23

ts 4141 TRANSISTOR smd

BC847

Untitled

b45 sot23

Untitled

Untitled

GES5819