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    1F TRANSISTOR Search Results

    1F TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    1F TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc847at

    Abstract: No abstract text available
    Text: BC847AT/BT/CT SOT-523 Transistor NPN SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC847AT=1E; BC847BT=1F; BC847CT=1G Dimensions in inches and (millimeters)


    Original     		PDF BC847AT/BT/CT OT-523 OT-523 BC847AT BC847BT BC847CT

    bc847b

    Abstract: BC847C marking 1F BC847B, BC847C bc847cs
    Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE PNP COMPLEMENTARY TYPES ARE


    Original     		PDF BC847B BC847C BC857B BC857C OT-23 BC847C marking 1F BC847B, BC847C bc847cs

    BC847B

    Abstract: BC847C 149L BC857B
    Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B


    Original     		PDF BC847B BC847C OT-23 BC847B BC857B OT-23 BC847C 149L BC857B

    SMD Transistor 1f

    Abstract: MARKING 1F transistor marking 1f CMBT5550
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration


    Original     		PDF ISO/TS16949 OT-23 CMBT5550 C-120 SMD Transistor 1f MARKING 1F transistor marking 1f CMBT5550

    BC847B

    Abstract: BC847C BC847B, BC847C BC847B-1F BC857B
    Text: BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY


    Original     		PDF BC847B BC847C OT-23 BC847B BC857B OT-23 BC847C BC847B, BC847C BC847B-1F BC857B

    transistor marking 1f

    Abstract: CMBT5550
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBT5550 C-120 transistor marking 1f CMBT5550

    smd transistor marking BL

    Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL smd transistor marking 1E smd transistor .1G CSC2712 ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23

    smd TRANSISTOR 1D

    Abstract: SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W smd TRANSISTOR 1D SMD TRANSISTOR MARKING 1D SMD TRANSISTOR MARKING 1F smd transistor 1g SMD TRANSISTOR MARKING 1B transistor smd 1E ts 4141 TRANSISTOR smd 1D smd transistor TRANSISTOR smd 1D smd transistor marking 1h

    smd transistor marking BL

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSC2712Y=1E CSC2712GR G =1F


    Original     		PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL

    marking 1E

    Abstract: BC848
    Text: BC847 BC848 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847A 1E BC847B 1F BC848A 1J BC848B 1K 2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENTS ARE RESPECTIVELY


    Original     		PDF BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 marking 1E BC848

    transistor smd marking PE

    Abstract: SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 Formed SMD Package NPN Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G


    Original     		PDF BC846W OT-323 BC847AW BC846AW BC847BW BC846BW BC847CW BC847W BC848W transistor smd marking PE SMD TRANSISTOR MARKING 1D transistor smd marking PE 1b

    BC847

    Abstract: BC847B BC857 marking 1F
    Text: BC847 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BC847B 1F SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL GENERAL PURPOSE PNP COMPLEMENT IS BC857 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BC847 BC847B BC857 OT-23 BC847 BC847B BC857 marking 1F

    equivalent transistor smd 3 em 7

    Abstract: CMBT5550 ts 4141 TRANSISTOR
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5550 C-120 equivalent transistor smd 3 em 7 CMBT5550 ts 4141 TRANSISTOR

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


    Original     		PDF CSC2712 OT-23 CSC2712Y CSC2712GR CSC2712BL C-120 ts 4141 TRANSISTOR smd

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5550 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5550 = 1F Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    Original     		PDF OT-23 CMBT5550 C-120

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR F N 1F 4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FE A TU R ES PACKAGE DIMENSIONS • Resistors Built-in TYPE in mHlimeters R 1 = 22 kf2 R2 = 47 k£7 r2 • ¿e Complementary to F A 1F 4N A B SO LUTE M A X IM U M R A TIN G S


    OCR Scan     		PDF

    B 660 TG

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 IMPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS PARTMARKING DETAILS:BC848B - 1K BC846A - 1A BC846B - 1B BC848C - 1L 1E BC849B - 2B BC847A - BC847B - 1F BC849C - 2C 1G BC850B - 2F BC848A - 1J BC850C - 2G BC847C - ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF BC847 BC849 BC846 BC848 BC850 BC848B BC846A BC846B BC848C BC849B B 660 TG

    BA1F4M

    Abstract: No abstract text available
    Text: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.


    OCR Scan     		PDF 100mA BA1F4M

    gilbert cell mixer

    Abstract: murata SFG455A3 455KHz ceramic filter
    Text: Philips Semiconductors RF Communications Products Product specification Low-voltage mixer FM IF system SA676 DESCRIPTION FEATURES The SA676 is a low-voltage monolithic FM 1F system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers,


    OCR Scan     		PDF SA676 SA676 20-pin gilbert cell mixer murata SFG455A3 455KHz ceramic filter

    BC850 SOT23

    Abstract: No abstract text available
    Text: BC847 BC849 BC846 BC848 BC850 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS COMPLEMENTARY TYPES BC846A-Z1A BC848B-1K BC846 BC856 BC846B-1B BC848C-Z1L BC847 BC857 BC847A-Z1E BC849B-2B BC848 BC858 BC847B-1F BC849C-2C


    OCR Scan     		PDF BC846A-Z1A BC846B-1B BC847A-Z1E BC847B-1F BC847C-1GZ BC848A-1JZ BC848B-1K BC848C-Z1L BC849B-2B BC849C-2C BC850 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S BC847 SMALL SIGNAL NPN TRANSISTORS Type M arking B C 847B 1F . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL GENERAL PURPOSE . PNP COMPLEMENT IS BC857


    OCR Scan     		PDF BC847 BC857 OT-23 OT-23

    b45 sot23

    Abstract: No abstract text available
    Text: BC847 BC848 r i 7 SGS-THOMSON m 7# KaO B©SILECTI3 raC©i SMALL SIGNAL NPN TRANSISTORS Type M arking BC847A 1E BC847B 1F BC848A 1J BC848B 1K . SILICON EPITAXIAL PLANAR NPN TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS


    OCR Scan     		PDF BC847 BC848 BC847A BC847B BC848A BC848B BC857 BC858 OT-23 b45 sot23

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA R N 11 10F#R N 111 1F TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1110F, RN1111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan     		PDF RN1110F, RN1111F RN2110F, RN2111F RN1110F RN1111F

    GES5819

    Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) MPSA20 MPSA55