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    1E000 Search Results

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    8A34011E-000AJG Renesas Electronics Corporation Line Card Synchronizer for IEEE 1588 - Eight Channels Visit Renesas Electronics Corporation
    8A34001E-000AJG8 Renesas Electronics Corporation System Synchronizer for IEEE 1588 - Eight Channels Visit Renesas Electronics Corporation
    8A34041E-000AJG Renesas Electronics Corporation Multichannel DPLL / DCO - Eight Channels Visit Renesas Electronics Corporation
    8A34011E-000AJG8 Renesas Electronics Corporation Line Card Synchronizer for IEEE 1588 - Eight Channels Visit Renesas Electronics Corporation
    8A34001E-000AJG Renesas Electronics Corporation System Synchronizer for IEEE 1588 - Eight Channels Visit Renesas Electronics Corporation
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    1E000 Price and Stock

    Broadcom Limited HLMP-3401-E0002

    LED YELLOW DIFFUSED T-1 3/4 T/H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HLMP-3401-E0002 Cut Tape 34,433 1
    • 1 $0.56
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    HLMP-3401-E0002 Reel 33,800 1,300
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    Mouser Electronics HLMP-3401-E0002 4,770
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    Broadcom Limited HLMP-1301-E0002

    LED RED DIFFUSED T-1 T/H
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    DigiKey HLMP-1301-E0002 Cut Tape 17,299 1
    • 1 $0.67
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    HLMP-1301-E0002 Reel 14,400 1,800
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    Mouser Electronics HLMP-1301-E0002 68,373
    • 1 $0.59
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    EBV Elektronik HLMP-1301-E0002 16,200 18 Weeks 1,800
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    TDK Epcos B82111E0000C021

    FIXED IND 12UH 4A 40 MOHM TH
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    DigiKey B82111E0000C021 Cut Tape 6,962 1
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    Infineon Technologies AG TLE5501E0001XUMA1

    SENSOR ROTARY 360DEG 8DSOP
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    DigiKey TLE5501E0001XUMA1 Cut Tape 5,367 1
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    TLE5501E0001XUMA1 Digi-Reel 5,367 1
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    Avnet Americas TLE5501E0001XUMA1 Reel 4 Weeks 277
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    Mouser Electronics TLE5501E0001XUMA1 2,872
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    Rochester Electronics TLE5501E0001XUMA1 775 1
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    Infineon Technologies AG TLE5501E0002XUMA1

    IC TMR ANGLE SENSOR 8-SOIC
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    DigiKey TLE5501E0002XUMA1 Digi-Reel 3,090 1
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    TLE5501E0002XUMA1 Cut Tape 3,090 1
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    TLE5501E0002XUMA1 Reel 2,500 2,500
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    Mouser Electronics TLE5501E0002XUMA1 2,858
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    Rochester Electronics TLE5501E0002XUMA1 10 1
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    Chip1Stop TLE5501E0002XUMA1 Cut Tape 2,380
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    TLE5501E0002XUMA1 2,217
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    EBV Elektronik TLE5501E0002XUMA1 17,500 19 Weeks 2,500
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    New Advantage Corporation TLE5501E0002XUMA1 15,000 1
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    Find more 1E000 price and stock on Findchips.com

    1E000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MX25L1635D

    Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
    Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5


    Original     		PDF MX25L1635D PM1374 MX25L1635D MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25

    Untitled

    Abstract: No abstract text available
    Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4


    Original     		PDF MX25L1673E PM1912

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function


    Original     		PDF 78K0R/KE3 16-bit PD78F1142 PD78F1143 PD78F1144 PD78F1145 PD78F1146 78K0R/KE3 U17854EJ6V0UD00 U17854EJ6V0UD

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


    Original     		PDF 3581D AT49BV320D AT49BV320DT SA70 AT49BV

    w19b320

    Abstract: No abstract text available
    Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W19B320AT/B w19b320

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


    Original     		PDF 3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original     		PDF

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


    Original     		PDF Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032

    M15451E

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can


    Original     		PDF PD29F064115-X 64M-BIT 16-BIT PD29F064115-X M15451E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    Original     		PDF Am29LV200 8-Bit/128 16-Bit)

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)


    Original     		PDF S29NS-R S29NS01GR, S29NS512R, S29NS256R, S29NS128R S29NS512P S29NS512R. S29VS256R S29VS128R

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    JESD94

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Preliminary) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S25FL116K 16-Mbit S25FL116K JESD94

    S25FL116K

    Abstract: No abstract text available
    Text: S25FL116K 16-Mbit 2-Mbyte CMOS 3.0-Volt Flash Non-Volatile Memory Serial Peripheral Interface (SPI) with Multi-I/O and Industrial Temperature Data Sheet (Advance Information) S25FL116K Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S25FL116K 16-Mbit S25FL116K

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide


    Original     		PDF W28F321BT/TT 32MBIT W28F321, W28F321

    LHF00L14

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LHF00L14 Flash Memory 32M 2MB x 16 (Model No.: LHF00L14) Spec No.: EL163055 Issue Date: March 15, 2004 LHF00L14 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LHF00L14 LHF00L14) EL163055 LHF00L14

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		PDF Am29LV033C 63-ball 40-pin

    29F032B

    Abstract: m29f032b
    Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology


    OCR Scan     		PDF Am29F032B 20-year 29F032B 29F032B m29f032b