1C5615

Abstract: 1C5617 1C5619 1C5621 vr 25a
Contextual Info: basbni 1C5615 1C5617 □ □ □ □ cì S 3 « eli ’ ppc 1 Amp Fast Recovery Rectifier Chip I 200-600 Volts 1C5619 1C5621 ovos CHIP TYPE: RH FEATURES • Chip Outline Dimensions: 41 x 41 mils • Chip Thickness: 8 to 12 mils • Anode Metallization: Aluminum

1C5619

Contextual Info: Fast Recovery- Silicon Rectifier Die PART NUMBER: 1C5619 CONFIGURATION: 100-500ns METAL SYSTEM:A SIZE (Mil):40 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 1.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

PPC PRODUCTS CORP

Abstract: PPC Products 1C5615 1C5617 1C5619 1C5621 vr 25a
Contextual Info: P P C I I I I I PRODUCTS CORP bOE D • bflSblTl □ G G G C1S3 2bl * P P C J 1C5615 1C5619 1C5617 1C5621 1 Amp Fast Recovery Rectifier Chip 1200-600 Volts ^-O V 0 6 f CHIP TYPE: RH FEATURES • C hip O utline D im ensions: 41 x 41 m ils • C hip Thickness: 8 to 12 m ils

1C5619

Contextual Info: 1C5619 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 929, REV. A FAST RECOVERY SILICON RECTIFIER DIE Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Die Size Max. Junction Temperature Max. Storage Temperature Symbol VRWM

Contextual Info: 2000 CATALOG SENSITRON SEMICONDUCTOR Industrial Part Numbers fo r Silicon Die General Purpose, Fast, and Ultra-Fast Recovery Rectifiers I0 ra T, Part Suitable"' M etal12' Size PIV r, a 1 , " Ir PIV 1R(P I \ ) a 7 , (Amp) (Volt) Number Application System (mil) (Volt)

Die Products

Abstract: DieProducts murc160 1c4005 1C6151A 1C5711 c6090 1C4001 1C4004 MURC120
Contextual Info: " #!$ % ! ! & '#!$ % *+ ! +, - . - ( ( / +, - Schottky Rectifier Die Sensitron www.sensitron.com/dieproducts.htm IFSM V F @ IO 25° C Part Number Max VRM Die Size IO Max V mil A A V SD040SD15A/B 15 40 1 20 0.37 SD040SA30A/B 30 40 1 20 0.49 V IR @ VRM