1C5552

Contextual Info: 1C5552 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4312, REV- STANDARD RECOVERY SILICON RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glasspassivated Epitaxial Diode with Mesa Structure

1C5551

Abstract: 1C5550 1C5552 1C5553 1C5554
Contextual Info: fcjQE D IPPC 5 Amp Medium Recovery Rectifier Chip I 200-1000 Volts 1C5550 1C5552 1C5551 1C5553 1C5554 "T'CM-oS CHIP TYPE: RA FEATURES • C hip O utline D im ensions: 68 x 68 m ils • C hip Thickness: 8 to 12 m ils • Anode M etallization: A lum inum • M etallization Thickness: 70,000

1C5552

Contextual Info: General Purpose-Silicon Rectifier Die PART NUMBER: 1C5552 CONFIGURATION: more than 500ns METAL SYSTEM:A SIZE (Mil):65 MAXIMUM RATINGS / Conditions SYMBOL VALUE UNITS PEAK INVERSE VOLTAGE VRWM 600 Volts MAX. OUTPUT CURRENT IO 3.0 @55deg.C Amps MAX JUNCTION TEMPERATURE

9606

Abstract: 1C5550 1C5551 1C5552 1C5553 1C5554 400v 12v
Contextual Info: P P C P R O D U C T S CORP fcjDE D bfiSblRl □ □ □ □ CI51 HPPC 5 Amp Medium Recovery Rectifier Chip 1200-1000 Volts 1C5550 1C5552 1C5551 1C5553 1C5554 "•pCU'OS CHIP TYPE: RA FEATURES • Chip Outline Dimensions: 68 x 68 mils • Chip Thickness: 8 to 12 mils

Contextual Info: 2000 CATALOG SENSITRON SEMICONDUCTOR Industrial Part Numbers fo r Silicon Die General Purpose, Fast, and Ultra-Fast Recovery Rectifiers I0 ra T, Part Suitable"' M etal12' Size PIV r, a 1 , " Ir PIV 1R(P I \ ) a 7 , (Amp) (Volt) Number Application System (mil) (Volt)

Die Products

Abstract: DieProducts murc160 1c4005 1C6151A 1C5711 c6090 1C4001 1C4004 MURC120
Contextual Info: " #!$ % ! ! & '#!$ % *+ ! +, - . - ( ( / +, - Schottky Rectifier Die Sensitron www.sensitron.com/dieproducts.htm IFSM V F @ IO 25° C Part Number Max VRM Die Size IO Max V mil A A V SD040SD15A/B 15 40 1 20 0.37 SD040SA30A/B 30 40 1 20 0.49 V IR @ VRM